VL-MM8-2SBN

Product Specifications PART NO.: VL470T5763A-E6YA REV: 1.0 General Information 2GB 256Mx64 DDR2 SDRAM NON-ECC UNBUFFERED SODIMM 200-PIN Description The VL470T5763A is a 128Mx64 DDR2 SDRAM high density SODIMM. This single rank memory module consists of eight CMOS 256Mx8 bits with 8 banks DDR2 synchronous DRAMs in BGA packages and a 2K EEPROM in an 8-pin TSSOP package. This module is a 200-pin small-outline dual in-line memory module and is intended for mounting into an edge connector socket. Decoupling capacitors are mounted on the printed circuit board for each DDR2 SDRAM. Features • • • • • • • • • • • • • • • • • • • • • • Pin Description 200-pin, small-outline dual in-line memory module (SODIMM) JEDEC pin out Fast data transfer rate: PC2-5300 VDD = VDDQ = 1.8V +/-0.1V JEDEC standard 1.8V (SSTL_18 compatible) VDDSPD = 1.7V to 3.6V Differential data strobe (DQS, DQS# ) option Differential clock inputs (CK, CK#) Four-bit pre-fetch architecture DLL aligns DQ and DQS transition with CK Nominal and dynamic on-die termination (ODT) Programmable CAS# latency: 5 (DDR2-667) Write latency = Read latency - 1 tCK Eight internal component banks for concurrent operation Programmable burst; length (4, 8) Adjustable data-output drive strength Auto & self refresh, (8K/64ms refresh) Serial presence detect (SPD) with EEPROM Gold edge contacts Lead-free, RoHS compliant PCB: Height 30.00mm (1.181”), double sided component o o Operating temperature (TOPER): - Commercial (0 C