HSM4002

HSM4002 N-Ch 40V Fast Switching MOSFETs Description Product Summary The HSM4002 is the high cell density trenched Nch MOSFETs, which provide excellent RDSON and VDS 40 V gate charge for most of the synchronous buck RDS(ON),max 28 mΩ ID 7.5 A converter applications. The HSM4002 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. l l l l l SOP8 Pin Configuration 100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ IDM ±20 V Continuous Drain Current, VGS @ 10V 1 7.5 A Continuous Drain Current, VGS @ 10V 1 6 A 30 A 12 mJ 15 A 1.5 W Pulsed Drain Current 2 EAS Single Pulse Avalanche Energy IAS Avalanche Current PD@TA=25℃ Total Power Dissipation 3 4 TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol RθJA RθJC www.hs-semi.cn Parameter Typ. Thermal Resistance Junction-ambient (Steady State) Thermal Resistance Junction-Case Ver 2.0 1 1 Max. Unit --- 85 ℃/W --- 50 ℃/W 1 HSM4002 N-Ch 40V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage 2 Min. Typ. Max. Unit VGS=0V , ID=250uA 40 --- --- V Reference to 25℃ , ID=1mA --- 0.034 --- V/℃ VGS=10V , ID=5A --- --- 28 VGS=4.5V , ID=4A --- --- 38 1.0 --- 2.5 V --- -4.56 --- mV/℃ VDS=32V , VGS=0V , TJ=25℃ --- --- 1 VDS=32V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=5A --- 14 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.6 --- Ω Qg Total Gate Charge (4.5V) --- 5.5 --- Qgs Gate-Source Charge --- 1.25 --- Qgd Gate-Drain Charge --- 2.5 --- Td(on) VDS=20V , VGS=4.5V , ID=5A nC --- 8.9 --- Rise Time VDD=20V , VGS=10V , RG=3.3Ω --- 2.2 --- Turn-Off Delay Time ID=1A --- 41 --- Fall Time --- 2.7 --- Ciss Input Capacitance --- 593 --- Coss Output Capacitance --- 76 --- Crss Reverse Transfer Capacitance --- 56 --- Min. Typ. Max. Unit --- --- 7.5 A --- --- 30 A --- --- 1.2 V Tr Td(off) Tf Turn-On Delay Time uA VDS=15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS ISM VSD Parameter Conditions 1,5 Continuous Source Current Pulsed Source Current 2,5 Diode Forward Voltage 2 VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=15A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.hs-semi.cn Ver 2.0 2 HSM4002 N-Ch 40V Fast Switching MOSFETs Typical Characteristics 40 24 ID=5A VGS=10V 35 VGS=7V 16 VGS=5V RDSON (mΩ) ID Drain Current (A) 20 VGS=4.5V 30 12 8 25 VGS=3V 4 20 0 0 0.5 1 1.5 2 2.5 2 3 VDS , Drain-to-Source Voltage (V) Fig.1 Typical Output Characteristics 4 6 VGS (V) 8 10 Fig.2 On-Resistance vs. G-S Voltage 10 12 VGS Gate to Source Voltage (V) IS Source Current(A) VDS=20V 8 TJ=150℃ TJ=25℃ 4 0 0.00 0.25 0.50 0.75 ID=5A 8 6 4 2 0 0 1.00 VSD , Source-to-Drain Voltage (V) Fig.3 Forward Characteristics of Reverse 4 8 12 QG , Total Gate Charge (nC) 16 Fig.4 Gate-Charge Characteristics 2.0 1.8 Normalized On Resistance 1.7 Normalized VGS(th) 1.4 1.4 1.1 1 0.8 0.6 0.5 0.2 0.2 -50 0 50 100 -50 150 Fig.5 Normalized VGS(th) vs. TJ www.hs-semi.cn 0 50 100 150 TJ , Junction Temperature (℃) TJ ,Junction Temperature (℃ ) Fig.6 Normalized R DSON vs. TJ Ver 2.0 3 HSM4002 N-Ch 40V Fast Switching MOSFETs 1000 F=1.0MHz Capacitance (pF) Ciss 100 Coss Crss 10 1 5 9 13 17 21 25 VDS Drain to Source Voltage (V) Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (RθJA) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.01 P DM 0.01 T ON T D = TON/T SINGLE TJpeak = TC+P DMXRθJC 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance EAS= VDS 90% BVDSS Td(on) Tr Ton Td(off) VDD Tf VGS Toff Fig.10 Switching Time Waveform www.hs-semi.cn BVDSS BVDSS-VDD IAS 10% VGS 1 L x IAS2 x 2 Fig.11 Unclamped Inductive Switching Waveform Ver 2.0 4 HSM4002 N-Ch 40V Fast Switching MOSFETs Ordering Information Part Number HSM4002 www.hs-semi.cn Package code SOP-8 Ver 2.0 Packaging 2500/Tape&Reel 5