GL150N03AD

GL150N03AD R ○ 无锡光磊电子科技有限公司 GL Silicon N-Channel Power MOSFET V DSS General Description： The GL150N03AD uses advanced trench technology and design to provide excellent RDS(ON) with low gate 30 V ID 150 A PD 78 W R DS(ON) 1.9 mΩ charge. It can be used in a wide variety of applications. The QFN5×6 package form is QFN5×6, which accords with the RoHS standard. Features：  Fast Switching  Low Gate Charge and Rdson  Low Reverse transfer capacitances  100% Single Pulse avalanche energy Test Applications：  Power switching application  Hard switched and high frequency circuits  Uninterruptible power supply Absolute（Tc= 25℃ unless otherwise specified）： Parameter Symbol V DSS ID Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current T C = 100 °C Rating Units 30 V 150 A 90 A I DM Pulsed Drain Current 480 A V GS Gate-to-Source Voltage ±20 V PD Power Dissipation 78 W 175， –55 to 150 ℃ 300 ℃ T J ， T stg TL Operating Junction and Storage Temperature Range Maximum Temperature for Soldering Wux i G u a ng L e i e l e c t ro n i c t e c h n o l og y c o. , LT D 1/6 GL150N03AD R ○ 无锡光磊电子科技有限公司 GL Silicon N-Channel Power MOSFET Electrical Characteristics（ Tc= 25℃ unless other wise specified）： OFF Characteristics Parameter Symbol V DSS Test Conditions Drain to Source Breakdown Voltage ΔBV DSS /ΔT J Bvdss Temperature Coefficient Rating Min. Typ. Max. V GS =0V, I D =250µA 30 -- -- I D =250uA,Reference25℃ -- 0.1 -- V DS =30V,V GS = 0V,T a =25℃ -- -- 1 V DS =24V,V GS =0V,T a =125℃ -- -- 250 Units V V/℃ I DSS Drain to Source Leakage Current I GSS(F) Gate to Source Forward Leakage V GS =+20V -- -- 1 µA I GSS(R) Gate to Source Reverse Leakage V GS =-20V -- -- -1 µA µA ON Characteristics Parameter Symbol Test Conditions Rating Min. Typ. Max. Units R DS(ON) Drain-to-Source On-Resistance V GS =10V,I D =15A -- 1.9 2.5 mΩ R DS(ON) Drain-to-Source On-Resistance V GS =4.5V,I D =12A -- 2.5 3.5 mΩ V GS(TH) Gate Threshold Voltage V DS =V GS ,I D =250µA 1 3 V Pulse width tp≤380µs,δ≤2% Dynamic Characteristics Parameter Symbol g fs Forward Transconductance C iss Input Capacitance C oss Output Capacitance C rss Reverse Transfer Capacitance Test Conditions V DS =5V,I D =20A V GS =0V,V DS =10V f=1.0MHz Rating Min. Typ. Max. 15 -- -- Units S -- 4000 --- 100 -- -- 420 -- pF Resistive Switching Characteristics Parameter Symbol t d(ON) tr t d(OFF) tf Test Conditions Turn-on Delay Time Rating Min. Typ. Max. -- 7 -- Rise Time V DD =10V,I D =25A -- 18 -- Turn-Off Delay Time V GS =5V,R G =1.8Ω -- 30 -- -- 17 -- -- 28 -- -- 7 -- -- 6.8 -- Fall Time Qg Total Gate Charge Q gs Gate to Source Charge Q gd Gate to Drain (“ Miller ” )Charge V DD =10V, I D =25A V GS =10V Wux i G u a ng L e i e l e c t ro n i c t e c h n o l og y c o. , LT D 2/6 Units ns nC GL150N03AD R ○ 无锡光磊电子科技有限公司 GL Silicon N-Channel Power MOSFET Source-Drain Diode Characteristics Test Conditions Rating Symbol Parameter IS Continuous Source Current (Body Diode) -- -- 120 A I SM Maximum Pulsed Current (Body Diode) -- -- 240 A V SD Diode Forward Voltage I S =12A,V GS =0V -- -- 1.5 V t rr Reverse Recovery Time I S =10A,T j = 25°C -- 30 -- ns Q rr Reverse Recovery Charge dI F /dt=100A/us,V GS =0V -- 44 -- nC Min. Typ. Max. Units Pulse width tp≤380µs,δ≤2% Parameter Symbol R θJc Junction-to-Case a1 ： Repetitive rating; pulse width limited by maximum junction temperature Wux i G u a ng L e i e l e c t ro n i c t e c h n o l og y c o. , LT D 3/6 Typ. Units 1.6 ℃ /W R ○ GL150N03AD 无锡光磊电子科技有限公司 GL Silicon N-Channel Power MOSFET Characteristics Curve： Wux i G u a ng L e i e l e c t ro n i c t e c h n o l og y c o. , LT D 4/6 R ○ GL150N03AD 无锡光磊电子科技有限公司 GL Silicon N-Channel Power MOSFET Wux i G u a ng L e i e l e c t ro n i c t e c h n o l og y c o. , LT D 5/6 GL150N03AD R ○ 无锡光磊电子科技有限公司 GL Silicon N-Channel Power MOSFET ＴＥＬ：０７５５－２３０６８１１９ Wux i G u a ng L e i e l e c t ro n i c t e c h n o l og y c o. , LT D 6/6