MDD2302

MDD2302 20V N-Channel Enhancement Mode MOSFET SOT-23 3 V(BR)DSS RDS(on)Typ ID Max 25mΩ@4.5V 20V 28mΩ@2.5V 1. Gate 2. Source 4A 3. Drain 2 1 Features Application Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance • • • • Marking Equivalent Circuit Load Switch Switching circuits High-speed line driver Power Management Functions D G XXX S2 XXX:Date Code S Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V Continuous Drain Current ID 4 A Pulsed Drain Current (Note 1) IDM 12 A PD 1.25 W RθJA 100 ℃/W TJ,Tstg -50 ~150 ℃ Power Dissipation(Note 2) Thermal Resistance from Junction to Ambient(Note 2) Junction Temperature and Storage Temperature Notes: Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1/6 V 1.0 MDD2302 Ta = 25℃ unless otherwise specified Symbol 20V N-Channel Enhancement Mode MOSFET Parameter Condition Min Typ Max Unit V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 20 -- -- V IDSS Drain-Source Leakage Current VDS=20V, VGS=0V -- -- 1 uA IGSS Gate-Source Leakage Current VGS=±10V, VDS=0V -- -- ±100 nA VGS(TH) Gate Threshold Voltage VDS=VGS, ID=250μA 0.5 0.8 1.2 V RDS(ON) Drain-Source On-State Resistance(Note 3) VGS=4.5V, ID=4A -- 25 30 mΩ VGS=2.5V, ID=3A -- 28 35 mΩ Min Typ Max Unit -- 340 -- pF -- 115 -- pF -- 33 -- pF Dynamic Electrical Characteristics Symbol Parameter Condition Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge VDS=10V -- 5.4 -- nC Qgs Gate Source Charge VGS=4.5V -- 0.65 -- nC Qgd Gate Drain Charge -- 1.6 -- nC Min Typ Max Unit -- 12 -- ns -- 36 -- ns RG=6Ω -- 34 -- ns RL=5.5Ω -- 10 -- ns Min Typ Max Unit VDS=10V VGS=0V f=1MHz ID=3A Switching Characteristics Symbol Parameter td(on) Turn on Delay Time tr Turn on Rise Time td(off) Turn Off Delay Time tf Turn Off Fall Time Condition VDS=10V VGS =4.5V ID=3A Source Drain Diode Characteristics Symbol Parameter Condition ISD Source drain current(Body Diode) TA=25℃ -- -- 1.6 A VSD Drain-Source Diode Forward Voltage IS=1A, VGS=0V -- -- 1.2 V Notes: 1.Pulse width limited by maximum allowable junction temperature 2.The value of PD&RθJA is measured with the device mounted on 1 in2 FR-4 board with 2oz.Copper, double sided, in a still air environment with Ta=25℃. 3.Pulse test ; Pulse width≤300us, duty cycle≤2% 2/6 V 1.0 MDD2302 20V N-Channel Enhancement Mode MOSFET Vdd Vgs Rgen td(on d(on)) Rl Vin D ton tr td(of d(off) f) Vout 90% 90% VOUT G toff tf 90 90% % INVER INVERT TED 10% 10% 10 10% % 90% 90% S VIN 50% 50% 50% 50% 10 10% % PULSE WIDT WIDTH Figure 2:Switching Waveforms PD Power(W) ID- Drain Current (A） Figure 1:Switching Test Circuit TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) Figure 4 Drain Current ID- Drain Current (A) Rdson On-Resistance(mΩ) Figure 3 Power Dissipation Vds Drain-Source Voltage (V) ID- Drain Current (A) Figure 5 Output Characteristics Figure 6 Drain-Source On-Resistance 3/6 V 1.0 MDD2302 ID- Drain Current (A) Normalized On-Resistance 20V N-Channel Enhancement Mode MOSFET TJ-Junction Temperature(℃) Vgs Gate-Source Voltage (V) Figure 8 Drain-Source On-Resistance C Capacitance (pF) Rdson On-Resistance(mΩ) Figure 7 Transfer Characteristics Vgs Gate-Source Voltage (V) Vds Drain-Source Voltage (V) Figure 10 Capacitance vs Vds Vgs Gate-Source Voltage (V) Is- Reverse Drain Current (A) Figure 9 Rdson vs Vgs Qg Gate Charge (nC) Vsd Source-Drain Voltage (V) Figure 11 Gate Charge Figure 12 Source- Drain Diode Forward 4/6 V 1.0 MDD2302 ID- Drain Current (A) 20V N-Channel Enhancement Mode MOSFET Vds Drain-Source Voltage (V) r(t),Normalized Effective Transient Thermal Impedance Figure 13 Safe Operation Area Square Wave Pluse Duration(sec) Figure 14 Normalized Maximum Transient Thermal Impedance 5/6 MDD2302 20V N-Channel Enhancement Mode MOSFET Outlitne Drawing SOT-23 Package Outline Dimensions A A1 b c D E E1 e L L1 θ L L1 E E1 Symbol e Dimensions In Millimeters Min Typ Max 0.90 1.40 0.10 0.00 0.30 0.50 0.20 0.08 2.80 2.90 3.10 1.20 1.60 2.80 2.25 1.80 1.90 2.00 0.10 0.50 0.4 0° 0.55 10° Suggested Pad Layout Note: 1.Controlling dimension:in/millimeters. 2.General tolerance: ±0.05mm. 3.The pad layout is for reference purposes only. 6/6 V 1.0