MBQ40T65QES

厂商：
MAGNACHIP
封装：
TO247-3
描述：
IGBT VCE=650V Ic=80A Vce(sat)=1.8V

数据手册：

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详情介绍
数据手册
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MBQ40T65QES 数据手册

650V Field Stop IGBT Features General Description This IGBT is produced using advanced Magnachip’s Field Stop Trench IGBT Technology, which provides high switching speed and excellent quality.  High Speed Switching & Low Power Loss  VCE(sat) = 1.8V @ IC = 40A  Maximum junction temperature 175°C Applications  Inverters  Welding converters  High range switching frequency converters TO-247 G C E Maximum Rating Parameter Collector-emitter voltage DC collector current, limited by Tvjmax TC=25°C TC=100°C Pulsed collector current, tp limited by Tvjmax Diode forward current limited by Tvjmax Rating Unit VCE V A A A Tvj Tstg 650 80 40 120 40 20 120 ±20 230 115 -40~175 -55~150 A V W W °C °C Symbol Rating Unit IC ICpuls TC=25°C TC=100°C Diode pulsed current, tp limited by Tvjmax Gate-emitter voltage IF IFpuls VGE TC=25°C TC=100°C Power dissipation Symbol Operating Junction temperature range Storage temperature range PD A Thermal Characteristic Parameter Thermal resistance junction-to-ambient RθJA 40 Thermal resistance junction-to-case for IGBT RθJC 0.65 Thermal resistance junction-to-case for Diode RθJC 1.75 Jul. 2021. Version 1.2 1 °C/W Magnachip Semiconductor Ltd. MBQ40T65QES 650V Field Stop IGBT MBQ40T65QES Part Number Marking Temp. Range Package Packing RoHS Status MBQ40T65QESTH 40T65QES -55~150°C TO-247 Tube Halogen Free Electrical Characteristic (Tvj = 25°C unless otherwise specified) Parameter Symbol Conditions Min Typ Max Unit 650 - - V Tvj = 25°C - 1.8 2.3 Tvj = 175°C - 2.3 - Tvj = 25°C - 1.5 1.95 Tvj = 175°C - 1.5 - Static Characteristic Collector-emitter breakdown voltage BVCES IC = 2mA, VGE = 0V Collector-emitter saturation voltage VCE(sat) IC = 40A, VGE= 15V VF VGE = 0V, IF = 20A Diode forward voltage Gate-emitter threshold voltage VGE(th) VCE = VGE, IC = 40mA V V 3.5 5.0 6.5 V Zero gate voltage collector current ICES VCE = 650V, VGE = 0V, Tvj = 25°C - - 40 μA Gate-emitter leakage current IGES VGE = 20V, VCE = 0V - - ±100 nA - 60 - - 13 - - 25 - - 1565 - - 37 - Dynamic Characteristic Total gate charge Qg Gate-emitter charge Qge Gate-collector charge Qgc VCE = 520V, IC = 40A, VGE = 15V Input capacitance Cies Reverse transfer capacitance Cres Output capacitance Coes - 120 - td(on) - 6 - tr - 36 - td(off) - 55 - - 64 - - 0.5 - VCE = 25V, VGE = 0V, f = 1MHz nC pF Switching Characteristic Turn-on delay time Rise time Turn-off delay time Fall time tf VGE = 15V, VCC = 400V, IC = 40A, RG = 10Ω, Inductive Load, Tvj = 25°C Turn-on switching energy Eon Turn-off switching energy Eoff - 0.4 - Total switching energy Ets - 0.9 - td(on) - 7 - tr - 41 - - 60 - - 102 - Turn-on delay time Rise time Turn-off delay time Fall time td(off) tf VGE = 15V, VCC = 400V, IC = 40A, RG = 10Ω, Inductive Load, Tvj = 175°C ns mJ ns Turn-on switching energy Eon - 1.04 - Turn-off switching energy Eoff - 0.57 - Total switching energy Ets - 1.61 - Reverse recovery time trr - 60 - - 18 - A - 696 - nC - 72 - ns - 22 - A - 864 - nC Reverse recovery current Irr Reverse recovery charge Qrr Reverse recovery time trr Reverse recovery current Irr Reverse recovery charge Qrr Jul. 2021. Version 1.2 IF = 20A, diF/dt = 820A/ μs, Tvj = 25°C IF = 20A, diF/dt = 820A/ μs, Tvj = 175°C 2 mJ ns Magnachip Semiconductor Ltd. MBQ40T65QES 650V Field Stop IGBT Ordering Information MBQ40T65QES 650V Field Stop IGBT Jul. 2021. Version 1.2 3 Magnachip Semiconductor Ltd. MBQ40T65QES 650V Field Stop IGBT Jul. 2021. Version 1.2 4 Magnachip Semiconductor Ltd. MBQ40T65QES 650V Field Stop IGBT Jul. 2021. Version 1.2 5 Magnachip Semiconductor Ltd. MBQ40T65QES 650V Field Stop IGBT Jul. 2021. Version 1.2 6 Magnachip Semiconductor Ltd. TO-247 E ΦP Dimensions are in millimeters, unless otherwise specified A L1 D E2 D1 S Q A2 b2 L b1 b E1 c e A1 Dimension Min(mm) Max(mm) A 4.70 5.31 A1 2.20 2.60 A2 1.50 2.49 b 0.99 1.40 b1 2.59 3.43 b2 1.65 2.39 c 0.38 0.89 D 20.30 21.46 D1 13.08 - E 15.45 16.26 E1 13.06 14.02 E2 4.32 e L 5.49 5.45BSC 19.81 20.57 L1 - 4.50 ΦP 3.50 3.70 Q 5.38 6.20 S 6.15BSC Note : Package body size, length and width do not include mold flash, protrusions and gate burrs. Jul. 2021. Version 1.2 7 Magnachip Semiconductor Ltd. MBQ40T65QES 650V Field Stop IGBT Physical Dimension MBQ40T65QES 650V Field Stop IGBT DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. Magnachip reserves the right to change the specifications and circuitry without notice at any time. Magnachip does not consider responsibility for use of any circuitry other than circuitry entirely included in a Magnachip product. is a registered trademark of Magnachip Semiconductor Ltd. Jul. 2021. Version 1.2 8 Magnachip Semiconductor Ltd.

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MBQ40T65QES

物料型号：MBQ40T65QES

器件简介： - 该IGBT采用MagnaChip的场截止沟槽IGBT技术制造，提供高速开关和优异的品质。

引脚分配： - 引脚分配在文档中未明确列出，但通常TO-247封装具有三个引脚：集电极(C)、发射极(E)和门极(G)。

参数特性： - 集电极-发射极电压(VCE)：650V - 集电极电流(IC)：在25°C时为80A，100°C时为40A - 脉冲集电极电流(ICpuls)：120A - 门极-发射极电压(VGE)：±20V - 最大结温(Tvjmax)：175°C

功能详解： - 该IGBT具备高速开关和低功耗损耗的特性，适用于多种应用场景。

应用信息： - 适用于逆变器、焊接转换器、高范围开关频率转换器等。

封装信息： - 封装类型：TO-247 - 包装：管装 - RoHS状态：符合RoHS标准，无卤

电气特性： - 包括静态特性、动态特性和开关特性，例如饱和压降(VCE(sat))、门极电荷(Qg)、输入电容(Cies)等。

热特性： - 包括结到环境的热阻(RBJA)、结到封装的热阻(ReJc)等。

物理尺寸： - 提供了TO-247封装的详细物理尺寸。