650V Field Stop IGBT
Features
General Description
This IGBT is produced using advanced Magnachip’s Field
Stop Trench IGBT Technology, which provides high switching
speed and excellent quality.
High Speed Switching & Low Power Loss
VCE(sat) = 1.8V @ IC = 40A
Maximum junction temperature 175°C
Applications
Inverters
Welding converters
High range switching frequency converters
TO-247
G C
E
Maximum Rating
Parameter
Collector-emitter voltage
DC collector current, limited by Tvjmax
TC=25°C
TC=100°C
Pulsed collector current, tp limited by Tvjmax
Diode forward current limited by Tvjmax
Rating
Unit
VCE
V
A
A
A
Tvj
Tstg
650
80
40
120
40
20
120
±20
230
115
-40~175
-55~150
A
V
W
W
°C
°C
Symbol
Rating
Unit
IC
ICpuls
TC=25°C
TC=100°C
Diode pulsed current, tp limited by Tvjmax
Gate-emitter voltage
IF
IFpuls
VGE
TC=25°C
TC=100°C
Power dissipation
Symbol
Operating Junction temperature range
Storage temperature range
PD
A
Thermal Characteristic
Parameter
Thermal resistance junction-to-ambient
RθJA
40
Thermal resistance junction-to-case for IGBT
RθJC
0.65
Thermal resistance junction-to-case for Diode
RθJC
1.75
Jul. 2021. Version 1.2
1
°C/W
Magnachip Semiconductor Ltd.
MBQ40T65QES 650V Field Stop IGBT
MBQ40T65QES
Part Number
Marking
Temp. Range
Package
Packing
RoHS Status
MBQ40T65QESTH
40T65QES
-55~150°C
TO-247
Tube
Halogen Free
Electrical Characteristic (Tvj = 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
650
-
-
V
Tvj = 25°C
-
1.8
2.3
Tvj = 175°C
-
2.3
-
Tvj = 25°C
-
1.5
1.95
Tvj = 175°C
-
1.5
-
Static Characteristic
Collector-emitter breakdown voltage
BVCES
IC = 2mA, VGE = 0V
Collector-emitter saturation voltage
VCE(sat)
IC = 40A, VGE= 15V
VF
VGE = 0V, IF = 20A
Diode forward voltage
Gate-emitter threshold voltage
VGE(th)
VCE = VGE, IC = 40mA
V
V
3.5
5.0
6.5
V
Zero gate voltage collector current
ICES
VCE = 650V, VGE = 0V, Tvj = 25°C
-
-
40
μA
Gate-emitter leakage current
IGES
VGE = 20V, VCE = 0V
-
-
±100
nA
-
60
-
-
13
-
-
25
-
-
1565
-
-
37
-
Dynamic Characteristic
Total gate charge
Qg
Gate-emitter charge
Qge
Gate-collector charge
Qgc
VCE = 520V, IC = 40A,
VGE = 15V
Input capacitance
Cies
Reverse transfer capacitance
Cres
Output capacitance
Coes
-
120
-
td(on)
-
6
-
tr
-
36
-
td(off)
-
55
-
-
64
-
-
0.5
-
VCE = 25V, VGE = 0V,
f = 1MHz
nC
pF
Switching Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
tf
VGE = 15V, VCC = 400V,
IC = 40A, RG = 10Ω,
Inductive Load, Tvj = 25°C
Turn-on switching energy
Eon
Turn-off switching energy
Eoff
-
0.4
-
Total switching energy
Ets
-
0.9
-
td(on)
-
7
-
tr
-
41
-
-
60
-
-
102
-
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td(off)
tf
VGE = 15V, VCC = 400V,
IC = 40A, RG = 10Ω,
Inductive Load, Tvj = 175°C
ns
mJ
ns
Turn-on switching energy
Eon
-
1.04
-
Turn-off switching energy
Eoff
-
0.57
-
Total switching energy
Ets
-
1.61
-
Reverse recovery time
trr
-
60
-
-
18
-
A
-
696
-
nC
-
72
-
ns
-
22
-
A
-
864
-
nC
Reverse recovery current
Irr
Reverse recovery charge
Qrr
Reverse recovery time
trr
Reverse recovery current
Irr
Reverse recovery charge
Qrr
Jul. 2021. Version 1.2
IF = 20A, diF/dt = 820A/ μs,
Tvj = 25°C
IF = 20A, diF/dt = 820A/ μs,
Tvj = 175°C
2
mJ
ns
Magnachip Semiconductor Ltd.
MBQ40T65QES 650V Field Stop IGBT
Ordering Information
MBQ40T65QES 650V Field Stop IGBT
Jul. 2021. Version 1.2
3
Magnachip Semiconductor Ltd.
MBQ40T65QES 650V Field Stop IGBT
Jul. 2021. Version 1.2
4
Magnachip Semiconductor Ltd.
MBQ40T65QES 650V Field Stop IGBT
Jul. 2021. Version 1.2
5
Magnachip Semiconductor Ltd.
MBQ40T65QES 650V Field Stop IGBT
Jul. 2021. Version 1.2
6
Magnachip Semiconductor Ltd.
TO-247
E
ΦP
Dimensions are in millimeters, unless otherwise specified
A
L1
D
E2
D1
S
Q
A2
b2
L
b1
b
E1
c
e
A1
Dimension
Min(mm)
Max(mm)
A
4.70
5.31
A1
2.20
2.60
A2
1.50
2.49
b
0.99
1.40
b1
2.59
3.43
b2
1.65
2.39
c
0.38
0.89
D
20.30
21.46
D1
13.08
-
E
15.45
16.26
E1
13.06
14.02
E2
4.32
e
L
5.49
5.45BSC
19.81
20.57
L1
-
4.50
ΦP
3.50
3.70
Q
5.38
6.20
S
6.15BSC
Note : Package body size, length and width do not include mold flash, protrusions and gate burrs.
Jul. 2021. Version 1.2
7
Magnachip Semiconductor Ltd.
MBQ40T65QES 650V Field Stop IGBT
Physical Dimension
MBQ40T65QES 650V Field Stop IGBT
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
Magnachip reserves the right to change the specifications and circuitry without notice at any time. Magnachip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a Magnachip product.
is a registered trademark of Magnachip
Semiconductor Ltd.
Jul. 2021. Version 1.2
8
Magnachip Semiconductor Ltd.
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