PMPB14XNX

PMPB14XN 40 V, N-channel Trench MOSFET 11 March 2020 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • • • • • Very fast switching Low threshold voltage Trench MOSFET technology Side wettable flanks for optical solder inspection Exposed drain pad for excellent thermal conduction 3. Applications • • • • Relay driver High-speed line driver Low-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - 40 V VGS gate-source voltage -8 - 8 V ID drain current - - 11.5 A - 15 18 mΩ VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s [1] Static characteristics RDSon [1] drain-source on-state resistance VGS = 4.5 V; ID = 8.1 A; Tj = 25 °C 2 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm . PMPB14XN Nexperia 40 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 D drain 2 D drain Simplified outline 1 3 G gate 2 4 S source 3 5 D drain 6 D drain 7 D drain 8 S source Graphic symbol D 6 7 8 5 G 4 Transparent top view S 017aaa253 DFN2020MD‑6 (SOT1220) 6. Ordering information Table 3. Ordering information Type number Package Name PMPB14XN Description Version DFN2020MD‑6 plastic, leadless thermal enhanced ultra thin small outline package with side-wettable flanks (SWF); 6 terminals; 0.65 mm pitch; 2 mm x 2 mm x 0.65 mm body SOT1220 7. Marking Table 4. Marking codes Type number Marking code PMPB14XN 5D PMPB14XN Product data sheet All information provided in this document is subject to legal disclaimers. 11 March 2020 © Nexperia B.V. 2020. All rights reserved 2 / 14 PMPB14XN Nexperia 40 V, N-channel Trench MOSFET 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - 40 V VGS gate-source voltage -8 8 V ID drain current VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - 11.5 A VGS = 4.5 V; Tamb = 25 °C [1] - 8.1 A VGS = 4.5 V; Tamb = 100 °C [1] - 5.1 A - 33 A IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C [1] - 1.9 W Tamb = 25 °C; t ≤ 5 s [1] - 3.8 W - 12.5 W Tsp = 25 °C Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C - 1.9 A Source-drain diode IS [1] source current Tamb = 25 °C [1] 2 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm . aaa-030137 120 Pder (%) Ider (%) 80 80 40 40 0 -75 Fig. 1. aaa-030138 120 -25 25 75 Normalized total power dissipation as a function of ambient temperature PMPB14XN Product data sheet 0 -75 125 175 Tamb (°C) Fig. 2. -25 75 125 175 Tamb (°C) Normalized continous drain current as a function of ambient temperature All information provided in this document is subject to legal disclaimers. 11 March 2020 25 © Nexperia B.V. 2020. All rights reserved 3 / 14 PMPB14XN Nexperia 40 V, N-channel Trench MOSFET aaa-030527 102 ID (A) Limit RDSon = VDS/ID tp = 10 µs 10 100 µs 1 1 ms DC; Tsp = 25 °C 10 ms 10-1 10-2 10-1 Fig. 3. DC; Tamb = 25 °C; drain mounting pad 6 cm2 1 100 ms 10 102 VDS (V) Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage PMPB14XN Product data sheet All information provided in this document is subject to legal disclaimers. 11 March 2020 © Nexperia B.V. 2020. All rights reserved 4 / 14 PMPB14XN Nexperia 40 V, N-channel Trench MOSFET 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Rth(j-a) Conditions thermal resistance from in free air junction to ambient in free air; t ≤ 5 s Rth(j-sp) [1] [2] thermal resistance from junction to solder point Min Typ Max Unit [1] - 223 256 K/W [2] - 57 66 K/W [2] - 29 33 K/W - 6 10 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm . aaa-026869 103 Zth(j-a) (K/W) duty cycle = 1 102 0.5 0.25 0.75 0.33 0.2 0.1 0.05 10 0.02 0.01 0 1 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values aaa-026870 102 duty cycle = 1 0.75 Zth(j-a) (K/W) 0.5 0.33 0.2 0.25 0.1 10 0.05 0.02 0.01 0 1 10-3 10-2 10-1 FR4 PCB, mounting pad for drain 6 cm Fig. 5. 1 10 102 tp (s) 2 103 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMPB14XN Product data sheet All information provided in this document is subject to legal disclaimers. 11 March 2020 © Nexperia B.V. 2020. All rights reserved 5 / 14 PMPB14XN Nexperia 40 V, N-channel Trench MOSFET 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 40 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS = VGS; Tj = 25 °C 0.4 0.65 0.9 V IDSS drain leakage current VDS = 40 V; VGS = 0 V; Tj = 25 °C - - 1 µA IGSS gate leakage current VGS = -8 V; VDS = 0 V; Tj = 25 °C - - -100 nA VGS = 8 V; VDS = 0 V; Tj = 25 °C - - 100 nA RDSon drain-source on-state resistance VGS = 4.5 V; ID = 8.1 A; Tj = 25 °C - 15 18 mΩ VGS = 4.5 V; ID = 8.1 A; Tj = 150 °C - 24 29 mΩ VGS = 2.5 V; ID = 7.3 A; Tj = 25 °C - 17 22 mΩ VGS = 1.8 V; ID = 3 A; Tj = 25 °C - 23 32 mΩ VGS = 1.5 V; ID = 0.5 A; Tj = 25 °C - 40 100 mΩ gfs forward transconductance VDS = 10 V; ID = 8.3 A; Tj = 25 °C - 22 - S RG gate resistance f = 1 MHz - 2.4 - Ω VDS = 20 V; ID = 8.3 A; VGS = 4.5 V; Tj = 25 °C - 19.4 28 nC - 2.4 - nC - 5.6 - nC - 1625 - pF - 99 - pF - 85 - pF - 5 - ns - 8 - ns Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) turn-off delay time - 35 - ns tf fall time - 15 - ns - 0.7 1.2 V VDS = 20 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C VDS = 20 V; ID = 8.3 A; VGS = 4.5 V; RG(ext) = 6 Ω; Tj = 25 °C Source-drain diode VSD source-drain voltage PMPB14XN Product data sheet IS = 1.9 A; VGS = 0 V; Tj = 25 °C All information provided in this document is subject to legal disclaimers. 11 March 2020 © Nexperia B.V. 2020. All rights reserved 6 / 14 PMPB14XN Nexperia 40 V, N-channel Trench MOSFET aaa-030526 35 ID (A) 30 2.5 V ID (A) 1.8 V 2.0 V 25 aaa-030528 10-3 4.5 V min 10-4 typ max 20 15 1.5 V 10-5 10 5 VGS = 1.2 V 0 Fig. 6. 0 1 2 3 VDS (V) 10-6 4 0 0.5 1.0 VGS (V) 1.5 Tj = 25 °C VDS = 5 V; Tj = 25 °C Output characteristics: drain current as a Fig. 7. function of drain-source voltage; typical values Sub-threshold drain current as a function of gate-source voltage aaa-030529 80 1.5 V RDSon (mΩ) aaa-030530 80 RDSon (mΩ) VGS = 1.8 V 60 40 60 40 2.0 V Tj = 150 °C 2.5 V 20 20 Tj = 25 °C 3.0 V 4.5 V 0 0 5 10 15 20 25 30 ID (A) 0 35 Tj = 25 °C Fig. 8. Product data sheet 2 4 6 VGS (V) 8 ID = 8.3 A Drain-source on-state resistance as a function of drain current; typical values PMPB14XN 0 Fig. 9. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. 11 March 2020 © Nexperia B.V. 2020. All rights reserved 7 / 14 PMPB14XN Nexperia 40 V, N-channel Trench MOSFET aaa-030531 35 ID (A) 30 aaa-030532 2.0 a 1.5 25 20 1.0 15 10 Tj = 150 °C 5 0 0 0.5 1 0.5 Tj = 25 °C 1.5 VGS (V) 0 -60 2 0 60 120 Tj (°C) 180 VDS = 5 V Fig. 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values Fig. 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values aaa-030533 1.5 aaa-030534 104 C (pF) VGSth (V) 1.0 Ciss 103 max typ Coss 102 0.5 Crss min 0 -60 0 60 120 Tj (°C) 10 10-1 180 ID = 250 µA; VDS = VGS Product data sheet 10 VDS (V) 102 f = 1 MHz; VGS = 0 V Fig. 12. Gate-source threshold voltage as a function of junction temperature PMPB14XN 1 Fig. 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. 11 March 2020 © Nexperia B.V. 2020. All rights reserved 8 / 14 PMPB14XN Nexperia 40 V, N-channel Trench MOSFET aaa-030535 5 VDS VGS (V) ID 4 VGS(pl) 3 VGS(th) VGS 2 QGS1 1 0 QGS2 0 8 16 QG (nC) QGS QGD QG(tot) aaa-030347 Fig. 15. Gate charge waveform definitions 24 ID = 8.3 A; VDS = 20 V; Tamb = 25 °C Fig. 14. Gate-source voltage as a function of gate charge; typical values aaa-030536 6 IS (A) 4 Tj = 150 °C 2 0 0 Tj = 25 °C 0.4 0.8 VSD (V) 1.2 VGS = 0 V Fig. 16. Source current as a function of source-drain voltage; typical values 11. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 17. Duty cycle definition PMPB14XN Product data sheet All information provided in this document is subject to legal disclaimers. 11 March 2020 © Nexperia B.V. 2020. All rights reserved 9 / 14 PMPB14XN Nexperia 40 V, N-channel Trench MOSFET 12. Package outline DFN2020MD-6: plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals; body 2 x 2 x 0.65 mm SOT1220 (8×) pin 1 index area B E A D A T (6×) A1 detail X solderable lead end protrusion max. 0.02 mm (6×) C Lp E2 J1 D2 3 4 2 5 e J D1 bp (6×) e 1 v X E1 0 2 mm scale Dimensions (mm are the original dimensions) Unit A A1 bp min 0.25 nom max 0.65 0.04 0.35 D D1 D2 E E1 E2 1.9 1.0 0.2 1.9 1.1 0.51 2.1 1.2 0.3 2.1 1.3 0.61 e J J1 0.65 0.27 0.64 Lp T v y y1 0.2 0.10 0.16 0.22 0.1 0.05 0.1 0.3 Note 1. Dimension A is including plating thickness. Outline version A B 6 pin 1 index area mm y y1 C sot1220_po References IEC JEDEC JEITA European projection Issue date 18-05-30 18-06-07 SOT1220 Fig. 18. Package outline DFN2020MD‑6 (SOT1220) PMPB14XN Product data sheet All information provided in this document is subject to legal disclaimers. 11 March 2020 © Nexperia B.V. 2020. All rights reserved 10 / 14 PMPB14XN Nexperia 40 V, N-channel Trench MOSFET 13. Soldering Footprint information for reflow soldering of DFN2020MD-6 package 0.33 (6×) SOT1220 0.76 0.43 (6×) 0.66 0.53 (6×) 0.56 0.25 0.35 0.45 0.775 0.65 2.06 0.285 1.25 1.35 0.35 (6×) 1.05 0.25 (6×) 0.65 0.45 (6×) 0.9 1.1 1.2 0.935 0.935 2.5 solder land solder land plus solder paste solder paste deposit solder resist occupied area Dimensions in mm sot1220_fr Fig. 19. Reflow soldering footprint for DFN2020MD‑6 (SOT1220) PMPB14XN Product data sheet All information provided in this document is subject to legal disclaimers. 11 March 2020 © Nexperia B.V. 2020. All rights reserved 11 / 14 PMPB14XN Nexperia 40 V, N-channel Trench MOSFET 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMPB14XN v.1 Product data sheet - - PMPB14XN Product data sheet 20200311 All information provided in this document is subject to legal disclaimers. 11 March 2020 © Nexperia B.V. 2020. All rights reserved 12 / 14 PMPB14XN Nexperia 40 V, N-channel Trench MOSFET 15. Legal information injury, death or severe property or environmental damage. Nexperia and its suppliers accept no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Data sheet status Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Document status [1][2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. 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Suitability for use — Nexperia products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an Nexperia product can reasonably be expected to result in personal PMPB14XN Product data sheet Applications — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Nexperia products, and Nexperia accepts no liability for any assistance with applications or customer product design. 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Nexperia accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Nexperia’s warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Nexperia’s specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Nexperia for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Nexperia’s standard warranty and Nexperia’s product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. All information provided in this document is subject to legal disclaimers. 11 March 2020 © Nexperia B.V. 2020. All rights reserved 13 / 14 PMPB14XN Nexperia 40 V, N-channel Trench MOSFET Contents 1. General description...................................................... 1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Marking.......................................................................... 2 8. Limiting values............................................................. 3 9. Thermal characteristics............................................... 5 10. Characteristics............................................................ 6 11. Test information.......................................................... 9 12. Package outline........................................................ 10 13. Soldering................................................................... 11 14. Revision history........................................................12 15. Legal information......................................................13 © Nexperia B.V. 2020. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 11 March 2020 PMPB14XN Product data sheet All information provided in this document is subject to legal disclaimers. 11 March 2020 © Nexperia B.V. 2020. All rights reserved 14 / 14