MXDLN14TP
SiGe Low Noise Amplifier
for Dual-Band GNSS Applications
Rev 1.2
VED
APPRO
This document contains information that is confidential and proprietary to Maxscend Microelectronics
Company Limited (Maxscend) and may not be reproduced in any form without express written consent of
Maxscend. No transfer or licensing of technology is implied by this document.
Page 1 of 9
Maxscend Microelectronics Company Limited. All rights reserved.
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MXDLN14TP Low Noise Amplifier for GNSS
General Description
Features
MXDLN14TP high gain, Dual-Band low noise
amplifier (LNA) is dedicated to GPS, GLONASS
Galileo and Beidou standards. This product has
an extremely low noise figure of 0.5dB, 18.2dB
gain and excellent linearity.
MXDLN14TP works under a 1.6V to 3.6V single
power supply while consumes 3.3 mA current, in
power down (PD) mode, the power consumption
will be reduced to less than 1uA.
MXDLN14TP uses a small 1.1mm x 0.7mm x
0.45mm LGA 6-pin package.
18.0dB
@ 1176.45MHz
18.2dB
@ 1227.6MHz
17.5dB
@ 1575.42MHz
Low noise figure:
0.60dB
@ 1176.45MHz
0.60dB
@ 1227.6MHz
0.50dB
@ 1575.42MHz
Low operation current 3.3mA & PD current
less than 1uA
Single supply voltage range 1.6V to 3.6V
Small package 1.1mmx0.7mmx0.45mm ,
MSL1
Low cost BOM
Lead-Free and RoHS-Compliant
Applications
Automotive Navigation
Personal Navigation Device (PND)
Cell Phone with GPS
MID/PAD with GPS
High Gain:
Pin Configuration/Application Diagram (Top view)
GND
4
3
RFOUT
RF output
VDD
MXDLN14TP
RF input
L1
RFIN
5
2
VDD
1 nF
Enable
EN
6
1
GND
Figure 1.MXDLN14TP application circuit
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MXDLN14TP Low Noise Amplifier for GNSS
Table 1.
Component
Matching Band
L1
1160-1300MHz
L1
1550-1615MHz
Vendor
Type
Part Number & value
Murata
Wired inductor, high Q
LQW15AN12N, 12nH
various
Ceramic inductor, low Q
11nH
Murata
Wired inductor, high Q
LQW15AN6N8, 6.8nH
various
Ceramic inductor, low Q
6.2nH
Absolute Maximum Ratings
Table 2.
Parameters
Power supply
Other Pin to GND
Maximum RF Input Power
Operation Temperature Range
Junction Temperature
Storage temperature Range
Lead Temperature (soldering)
Soldering Temperature (reflow)
Human Body Mode ESD
Machine Mode ESD
Charge Device Mode ESD
Range
-0.3 ~ 4.0
-0.3~VDD+0.3
25
-40~90
150
-65~160
260
260
-2000~+2000
-150~+150
-1000~+1000
Units
V
V
dBm
℃
℃
℃
℃
℃
V
V
V
Specifications
DC Characteristics
TA=-40~+90℃, Typically TA=25℃ VDD=2.8V, unless otherwise noted
Table 3.
Parameters
Supply Voltage
Supply Current
EN Input High
EN Input Low
Condition
VDD=1.6~3.6V
EN=High,
EN=Low
Min
1.6
Typ
2.8
Max
3.6
Units
V
-
3.3
-
mA
0
1.0
0
0.01
1.8
0
1
VDD
0.3
uA
V
V
Page 3 of 9
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MXDLN14TP Low Noise Amplifier for GNSS
AC Characteristics
TA=-40~+90℃, typically TA=25℃ VDD=2.8V, all data measured on Maxscend’s EVB, unless otherwise noted
Table 4.
Parameters
RF Frequency Range
Power Gain
Noise Figure
Input Return Loss
Output Return Loss
Reverse Isolation
Stability
Input Power 1-dB Compression Point
Input In-Band IP3
Output In-Band IP3
Conditions
None
Note1
Note1
Note1
Note2
1176MHz
Note3
Note4
Min
1160
1.5
-13
-7
-2
Typ
1176.45
18.0
0.6
-9
-9
-29
-9.5
-2
3
Max
1215
1.0
-5
-5
-24
-
Units
MHz
dB
dB
dB
dB
dB
dBm
dBm
dBm
TA=-40~+90℃, typically TA=25℃ VDD=1.8V, all data measured on Maxscend’s EVB, unless otherwise noted
Table 5.
Parameters
RF Frequency Range
Power Gain
Noise Figure
Input Return Loss
Output Return Loss
Reverse Isolation
Stability
Input Power 1-dB Compression Point
Input In-Band IP3
Output In-Band IP3
Conditions
None
Note1
Note1
Note1
Note2
1176MHz
Note3
Note4
Min
1160
1.5
-16
-9
-4
Typ
1176.45
17.8
0.6
-9
-9
-29
-12.5
-4
1
Max
1215
1.0
-5
-5
-24
-
Units
MHz
dB
dB
dB
dB
dB
dBm
dBm
dBm
Note1: sweep power -30dBm, 1176.45MHz
Note2: frequency range 500MHz-5GHz
Note3: f1 = 1175.45 MHz, f2 = 1176.45 MHz, -25dBm
Note4: f1=1800MHz, f2=2400MHz, pin= -20dBm at f1, pin= -65dBm at f2
Page 4 of 9
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MXDLN14TP Low Noise Amplifier for GNSS
AC Characteristics
TA=-40~+90℃, typically TA=25℃ VDD=2.8V, all data measured on Maxscend’s EVB, unless otherwise noted
Table 6.
Parameters
RF Frequency Range
Power Gain
Noise Figure
Input Return Loss
Output Return Loss
Reverse Isolation
Stability
Input Power 1-dB Compression Point
Input In-Band IP3
Output In-Band IP3
Conditions
None
Note1
Note1
Note1
Note2
1227MHz
Note3
Note4
Min
1215
1.5
-13
-7
-2
Typ
1227.6
18.2
0.6
-10
-10
-28
-9.5
-2
3
Max
1300
1.0
-5
-5
-23
-
Units
MHz
dB
dB
dB
dB
dB
dBm
dBm
dBm
TA=-40~+90℃, typically TA=25℃ VDD=1.8V, all data measured on Maxscend’s EVB, unless otherwise noted
Table 7.
Parameters
RF Frequency Range
Power Gain
Noise Figure
Input Return Loss
Output Return Loss
Reverse Isolation
Stability
Input Power 1-dB Compression Point
Input In-Band IP3
Output In-Band IP3
Conditions
None
Note1
Note1
Note1
Note2
1227MHz
Note3
Note4
Min
1215
1.5
-16
-9
-4
Typ
1227.6
18.0
0.6
-10
-10
-28
-12.5
-4
1
Max
1300
1.0
-5
-5
-23
-
Units
MHz
dB
dB
dB
dB
dB
dBm
dBm
dBm
Note1: sweep power -30dBm, 1227.6MHz
Note2: frequency range 500MHz-5GHz
Note3: f1 = 1226.6 MHz, f2 = 1227.6 MHz, -25dBm
Note4: f1=1800MHz, f2=2400MHz, pin= -20dBm at f1, pin= -65dBm at f2
Page 5 of 9
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MXDLN14TP Low Noise Amplifier for GNSS
TA=-40~+90℃, typically TA=25℃ VDD=2.8V, all data measured on Maxscend’s EVB, unless otherwise noted
Table 8.
Parameters
RF Frequency Range
Power Gain
Noise Figure
Input Return Loss
Output Return Loss
Reverse Isolation
Stability
Input Power 1-dB Compression Point
Input In-Band IP3
Output In-Band IP3
Conditions
None
Note1
Note1
Note1
Note2
1575MHz
Note3
Note4
Min
1550
1.5
-11
-5
0
Typ
1575.42
17.5
0.5
-15
-15
-26
-7
0
5
Max
1615
0.9
-10
-10
-21
-
Units
MHz
dB
dB
dB
dB
dB
dBm
dBm
dBm
TA=-40~+90℃, typically TA=25℃ VDD=1.8V, all data measured on Maxscend’s EVB, unless otherwise noted
Table 9.
Parameters
RF Frequency Range
Power Gain
Noise Figure
Input Return Loss
Output Return Loss
Reverse Isolation
Stability
Input Power 1-dB Compression Point
Input In-Band IP3
Output In-Band IP3
Conditions
None
Note1
Note1
Note1
Note2
1575MHz
Note3
Note4
Min
1550
1.5
-13.5
-7
-2
Typ
1575.42
17.3
0.5
-15
-15
-26
-10
-2
3
Max
1615
0.9
-10
-10
-21
-
Units
MHz
dB
dB
dB
dB
dB
dBm
dBm
dBm
Note1: sweep power -30dBm, 1575.42MHz
Note2: frequency range 500MHz-5GHz
Note3: f1 = 1574.42 MHz, f2 = 1575.42 MHz, -25dBm
Note4: f1=1713MHz, f2=1851MHz, pin= -20dBm at f1, pin= -65dBm at f2
Page 6 of 9
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MXDLN14TP Low Noise Amplifier for GNSS
Pin Descriptions
Table 10.
Pin
Pin Name
I/O
Pin Description
1
GND
AG
Analog VSS
2
VDD
AP
Power supply
3
RFOUT
AO
LNA output
4
GND
AG
Analog VSS
5
RFIN
AI
LNA input from antenna
6
EN
DI
Pull high enable, pull low into power down mode
Note: DI (digital input), DO (digital output), DIO (digital bidirectional), AI (analog input), AO (analog output), AIO (analog
bidirectional), AP (analog power), AG (analog ground),
Outline Dimensions
aaa C
A
D
ccc C
A3
E
A
A2
SIDE VIEW
aaa C
LASER MARK FOR PIN1
IDENTIFICATION IN THIS AREA
TOP VIEW
e
ALL DIMENSIONS ARE IN MILLIMETERS.
0.050
SYMBOL
A
A
A
A
A
B
0.050
A
PIN1 ID
A
A2
A3
e
D
E
aaa
MILLIMETER
MIN.
NOR.
0.40
0.45
0.09
0.12
0.31
0.33
0.35
0.40
0.65
0.70
1.05
1.10
0.10
ccc
MAX.
0.50
0.15
0.35
0.45
0.85
1.15
0.20
MIN.
0.0157
0.0035
0.0122
0.0138
0.0256
0.0413
INCH
NOR.
0.0177
0.0047
0.0130
0.0157
0.0276
0.0433
0.0039
MAX.
0.0197
0.0059
0.0138
0.0177
0.0295
0.0453
0.0079
BOTTOM VIEW
0.1±0.035
0.2±0.035
B
0.2±0.035
0.1±0.035
0.2±0.035
A
0.2±0.035
Figure 2. MXDLN14TP outline dimension
Page 7 of 9
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MXDLN14TP Low Noise Amplifier for GNSS
Marking Specification
Manufacture Code(Variable):
Product Code(Fixed):
From 1~9 and A ~Z excluding
B
letter "I" and "O" for lot tracking
Pin 1
Figure 3.Marking specification (Top View)
Tape and Reel Dimensions
Figure 4. Tape and reel dimensions
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MXDLN14TP Low Noise Amplifier for GNSS
Reflow Chart
tP
TP
Critical Zone
TL to TP
Ramp-up
Temperature
TL
TSmax
tL
TSmin
Ramp-down
tS
Preheat
t 25 ℃ to Peak
Time
Figure 5.Recommended Lead-Free Reflow Profile
Table 11.
Profile Parameter
Lead-Free Assembly,Convection,IR/Convection
Ramp-up rate(TSmax to Tp)
3℃/second max.
Preheat temperature(TSmin to TSmax)
150℃ to 200℃
Preheat time(ts)
60 - 180 seconds
Time above TL , 217℃(tL)
60 - 150 seconds
Peak temperature(Tp)
260℃
Time within 5℃ of peak temperature(tp)
20 - 40 seconds
Ramp-down rate
6℃/second max.
Time 25℃ to peak temperature
8 minutes max.
ESD Sensitivity
Integrated circuits are ESD sensitive and can be damaged by static electric charge. Proper ESD
protection techniques should be used when handling these devices.
RoHS Compliant
This product does not contain lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls
(PBB) and polybrominated diphenyl ethers (PBDE), and are considered RoHS compliant.
1.1.1
Page 9 of 9
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