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ESD9X12VD-2/TR

ESD9X12VD-2/TR

  • 厂商:

    WILLSEMI(韦尔)

  • 封装:

    SOD923

  • 描述:

    ESD9X12VD-2/TR

  • 数据手册
  • 价格&库存
ESD9X12VD-2/TR 数据手册
ESD9X12VD ESD9X12VD 1-Line, Uni-directional, Normal-Capacitor Http//:www.willsemi.com Transient Voltage Suppressors Descriptions The ESD9X12VD is a transient voltage suppressors (TVS) which provide a very high level protection for sensitive electronic components that SOD-923 may be subjected to electrostatic discharge (ESD). It is designed to replace multilayer varistors (MLV) in consumer equipments applications such as mobile phone, notebook, PAD, STB, LCD TV etc. The ESD9X12VD was past ESD transient voltage up to ±30KV (contact) according to IEC61000-4-2 and Pin configuration (Top view) withstand peak current up to 3.5A for 8/20us pulse according to IEC61000-4-5. The ESD9X12VD package. Standard is available in products are SOD-923 Pb-free C and Halogen-free. SOD-923 Features C = Device code Marking  Working voltage : 12V  Peak power (tp=8/20us) : 84W  ESD protection IEC61000-4-2 (Contact) : ±30KV IEC61000-4-2 (Air) : ±30KV  Low leakage current  Small package Order information Device Package Shipping ESD9X12VD-2/TR SOD-923 10000/Tape&Reel Applications  Mobile phone  PAD  Notebook  STB  LCD TV  Digital camera  Other electronics equipments Will Semiconductor Ltd. 1 Jul, 2014 - Rev. 1.3 ESD9X12VD Absolute maximum ratings Parameter Symbol Rating Unit Peak pulse power (tp=8/20us) Ppk 84 W Peak pulse current (tp=8/20us) Ipp 3.5 A ESD voltage IEC61000-4-2 air ±30 VESD ESD voltage IEC61000-4-2 contact Junction temperature 150 o 260 o -55~150 o TJ Lead temperature TL Storage temperature KV ±30 Tstg C C C Electronics characteristics (Ta=25 oC, unless otherwise noted) Parameter Symbol Reveres maximum working voltage VRWM IR Reveres breakdown voltage VBR Clamping voltage VC Junction capacitance C 110 100 90 80 70 60 50 40 30 20 10 0 Min. Typ. VRWM=12V IT=1mA Max. Unit 12 V 1 uA 13.5 V Ipp=1A tp=8/20us 18 V Ipp=3.5A tp=8/20us 24 V F=1MHz, VR=0V 30 pF 100 90 Front times=1.25*( t90-t10) =8us Peak Pulse Current (%) Peak Pulse Current (%) Reveres leakage current Condition Duration=20us 10 0 5 10 15 20 25 30 Peak Pulse time (us) 35 30ns tr=0.7~1ns 40 8/20us waveform Will Semiconductor Ltd. 60ns IEC61000-4-2 waveform 2 Jul, 2014 - Rev. 1.3 t ESD9X12VD Typical o characteristics (Ta=25 C, unless otherwise noted) 40 C - Junction capacitance (pF) 28 VC - Clamping voltage (V) Pulse waveform: tp=8/20us 24 20 16 12 0 1 2 3 Fsignal =1MHz Vsignal =50mVrms 35 30 25 20 4 0 1 2 3 4 Ipp - Peak pulse current (A) VR - Reverse voltage (V) Clamping voltage vs. Peak pulse current Capacitance vs. Reveres voltage 5 1000 % of Rated power Peak Pulse Power (W) 100 100 10 80 60 40 20 1 0 1 10 100 Pulse Duration(us) 1000 0 25 50 75 100 125 TA - Ambient temperature ( C) Non-Repetitive Peak Pulse Power vs. Pulse time Power derating vs. Temperature ESD Clamping ESD Clamping (IEC61000-4-2 +8KV contact) (IEC61000-4-2 -8KV contact) Will Semiconductor Ltd. 150 o 3 Jul, 2014 - Rev. 1.3 ESD9X12VD Package outline dimensions SOD-923 Dimensions in millimeter Symbol Min. Typ. Max. A 0.350 - 0.450 A1 0.000 - 0.050 b 0.150 - 0.270 c - - 0.180 D 0.550 0.600 0.650 E 0.900 1.000 1.100 E1 0.750 0.800 0.850 o θ 7 Ref. Recommend PCB Layout (Unit: mm) 0.40 0.90 0.30 Will Semiconductor Ltd. 0.60 4 0.30 Jul, 2014 - Rev. 1.3
ESD9X12VD-2/TR 价格&库存

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