SS34AHE

SS34AHE THRU SS320AHE Reverse Voltage - 40 to 200 Volts Forward Current - 3.0 Ampere SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features  Metal silicon junction,majority carrier conduction  For surface mounted applications Metal silicon junction,majority carrier conduction 1 2  Low power loss,high efficiency  For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications Top View Simplified outline SMAHE and symbol Mechanical Data PINNING PIN  Case : JEDEC SMAHE Molded plastic body  Terminals : Solderable per MIL-STD-750,Method 2026  Weight : 0.0010 ounce, 0.030grams DESCRIPTION 1 Cathode 2 Anode Mechanical Data Ratings at 25 °C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. SS34AHE SS36AHE SS310AHE SS315AHE SS320AHE SYMBOLS MDD SS34 MDD SS36 MDD SS310 MDD SS315 MDD SS320 UNITS VRR RMM VRMS 40 28 60 42 150 105 200 140 VDC 40 60 100 70 100 150 200 V V V Parameter Marking Code Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current IF(AV) 3.0 A Peak forward surge current 8.3ms single half sine-wave superimposed onrated load (JEDEC Method) IFSM 80 A Maximum instantaneous forward voltage at 3.0A VF Maximum DC reverse current at rated DCblocking voltage IR TA=25℃ TA=100℃ Typical junction capacitance (NOTE 1) Typical thermal resistance (NOTE 2) Operating junction temperature range Storage temperature range CJ 0.55 0.5 10 180 0.70 0.85 0.3 5.0 150 TJ 100 -55 to +150 TSTG -55 to +150 RJA V 0.95 mA pF ℃/W ℃ ℃ Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 2.P.C.B. mounted with 3.81X3.81cm copper pad areas http://www.microdiode.com Rev:2024A2 Page :1 SS34AHE THRU SS320AHE Reverse Voltage - 20 to 200 Volts Forward Current - 3.0 Ampere Typical Characterisitics Fig.2 Typical Reverse Characteristics Fig.1 Forward Current Derating Curve 3.5 10 4 10 3 10 2 TJ=100°C 2.5 2.0 1.5 1.0 0.5 Single phase half-wave 60 Hz resistive or inductive load 0.0 25 75 50 100 125 150 Instaneous Reverse Current ( μ ) A Average Forward Current (A) 3.0 TJ=75°C 40V 60~200V 101 TJ=25°C 0 10 0 Case Temperature (°C) 40 20 60 80 100 Percent of Rated Peak Reverse Voltage（%） Fig.3 Typical Forward Characteristic Fig.4 Typical Junction Capacitance 500 TJ=25°C 20 200 Junction Capacitance (pF) Instaneous Forward Current (A) 10 1.0 40V 60V 100V 150~200V 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 100 50 20 40V 60~200V 10 1.8 0.1 Fig.5 Maximum Non-Repetitive Peak Forward Surage Current °C / W） 60 40 20 Sine Wave (JEDEC Method) 00 Number of Cycles at 60Hz 100 Transient Thermal Impedance（ Peak Forward Surage Current (A) 80 10 100 Fig.6- Typical Transient Thermal Impedance 100 1 10 Reverse Voltage (V) Instaneous Forward Voltage (V) 8.3 ms Single Half 1 200 100 10 1 0.01 0.1 1 10 100 t, Pulse Duration（sec） The curve above is for reference only. http://www.microdiode.com Rev:2024A2 Page :2 SS3AHE THRU SS320AHE Reverse Voltage - 20 to 200 Volts Forward Current - 3.0 Ampere Packing information ∠ALL ROUND ∠ALL ROUND A C HE E e g pad E d Top View mil g Bottom View A C D E HE d e g h max 1.20 0.35 4.10 2.70 5.20 1.90 3.05 1.50 1.2 min 0.90 0.20 3.70 2.30 4.80 1.70 2.85 1.30 1.0 max 47 13.8 161 106 205 75 120 59 47 min 35 7.9 145 90 189 67 112 51 39 UNIT mm h pad D ∠ 12° The recommended mounting pad size 5.2 3.2 (126) 2.0 (79) (205) 1.6 (63) 1.3 (51) Unit： m m ( mi l) http://www.microdiode.com Rev:2024A2 Page :3