HSP8004

HSP8004 N-Ch 80V Fast Switching MOSFETs Description Product Summary The HSP8004 is the high cell density trenched Nch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The HSP8004 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full VDS 80 V RDS(ON),TYP 3.1 mΩ ID 175 A function reliability approved. ⚫ ⚫ ⚫ ⚫ ⚫ 100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology TO-220 Pin Configuration Absolute Maximum Ratings Symbol Parameter VDS Rating Units Drain-Source Voltage 80 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V1,6 175 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V1,6 123 A 440 A 378 mJ 192 W IDM EAS PD@TC=25℃ Pulsed Drain Current2 Single Pulse Avalanche Total Power Energy3 Dissipation4 TSTG Storage Temperature Range -55 to 175 ℃ TJ Operating Junction Temperature Range -55 to 175 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-Ambient RθJC Junction-Case1 www.hs-semi.cn Thermal Resistance Ver 2.0 Typ. 1 Max. Unit --- 62 ℃/W --- 0.65 ℃/W 1 HSP8004 N-Ch 80V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage On-Resistance 2 RDS(ON) Static Drain-Source VGS(th) Gate Threshold Voltage IDSS Drain-Source Leakage Current Conditions Min. Typ. Max. Unit VGS=0V , ID=250uA 80 --- --- V VGS=10V , ID=20A --- 3.1 3.5 m VGS=VDS , ID =250uA 1.2 1.8 2.5 V VDS=80V , VGS=0V , TJ=25℃ --- --- 1 VDS=64V , VGS=0V , TJ=25℃ --- --- 100 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=30A --- 50 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.2 ---  --- 80 --- --- 15 --- --- 16 --- Qg Total Gate Charge (10V) Qgs Gate-Source Charge Qgd Gate-Drain Charge Td(on) Turn-On Delay Time Tr Rise Time VDD=40V , VGS=10V , ID=20A --- 17 --- VDD=40V , VGS=10V , RG=6, --- 32 --- ID=20A --- 50 --- nC ns Td(off) Turn-Off Delay Time Tf Fall Time --- 18 --- Ciss Input Capacitance --- 4450 --- Coss Output Capacitance --- 800 --- Crss Reverse Transfer Capacitance --- 50 --- Min. Typ. Max. Unit VDS=40V , VGS=0V , f=1MHz pF Diode Characteristics Symbol IS Parameter Conditions VG=VD=0V , Force Current --- --- 175 A Voltage 2 VGS=0V , IS=A , TJ=25℃ --- --- 1.5 V trr Reverse Recovery Time IF=20A , dI/dt=100A/µs , --- 40 --- nS Qrr Reverse Recovery Charge TJ=25℃ --- 45 --- nC VSD Continuous Source Current 1,5 Diode Forward www.hs-semi.cn Ver 2.0 2 HSP8004 N-Ch 80V Fast Switching MOSFETs www.hs-semi.cn Ver 2.0 3 HSP8004 N-Ch 80V Fast Switching MOSFETs www.hs-semi.cn Ver 2.0 4 HSP8004 N-Ch 80V Fast Switching MOSFETs www.hs-semi.cn Ver 2.0 5 HSP8004 N-Ch 80V Fast Switching MOSFETs www.hs-semi.cn Ver 2.0 6