AO3422A

UMW R UMW AO3422A N-Channel 60-V(D-S) MOSFET V(BR)DSS RDS(on)MAX 105mΩ@10V 125mΩ@4.5V 60 V FEATURE ※ TrenchFET Power MOSFET ID 2.1A SOT–23 APPLICATION ※ Load Switch for Portable Devices ※ DC/DC Converter MARKING Equivalent Circuit 1. GATE 2. SOURCE 3. DRAIN Maximum ratings ( Ta=25℃ unless otherwise noted) Parameter Symbol Value Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 ID 2.1 IDM 10 Continuous Source-Drain Current(Diode Conduction) IS 0.85 Power Dissipation PD 1.25 W RθJA 125 ℃/W TJ 150 ℃ TSTG -55~+150 ℃ Continuous Drain Current Pulsed Diode Curren Thermal Resistance from Junction to Ambient (t≤5s) Operating Junction Storage Temperature www.umw-ic.com 1 Unit V A 友台半导体有限公司 UMW R UMW AO3422A MOSFET ELECTRICAL CHARACTERISTICS Static Electrical Characteristics (Ta = 25 ℃ Unless Otherwise Noted) Parameter Symbol Test Condition Min VGS = 0V, ID = 250µA 60 VGS(th) VDS =VGS, ID = 250µA 1 Gate-source leakage IGSS Zero gate voltage drain current IDSS Typ Max Unit Static Drain-source breakdown voltage V(BR)DSS Gate-source threshold voltage Drain-source on-state resistancea RDS(on) V 2.5 V VDS =0V, VGS = ±20V ±100 nA VDS = 60V, VGS =0V 1 µA VGS = 10V, ID = 3A 80 105 mΩ VGS = 4.5V, ID = 2A 89 125 mΩ Forward transconductancea gfs VDS = 4.5V, ID = 2.1A 11 S Diode forward voltage VSD IS=1.5A,VGS=0V 0.8 1.3 V 214 300 pF Dynamic Input capacitance Ciss Output capacitance Coss Reverse transfer capacitanceb Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance VDS = 25V,VGS =0V, f=1MHz VDS = 25V,VGS = 4.5V, ID = 3A Rg f=1MHz 31 pF 12.6 pF nC 2.6 3.3 0.6 nC 0.8 nC 1.3 3 Ω Switchingb Turn-on delay time Rise time Turn-off delay time Fall time td(on) tr td(off) VDS= 25V RL=6Ω, ID ≈ 1A, VGEN= 10V,Rg=3Ω tf 2.3 ns 2.4 ns 16.5 ns 2 ns Drain-source body diode characteristics Continuous Source-Drain Diode Current Tc=25℃ IS 3 A Note : 1. Repetitive Rating : Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t < 5 sec. 3. Pulse Test : Pulse Width≤300µs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. www.umw-ic.com 2 友台半导体有限公司 UMW R Symbol A A1 A2 b c D E E1 e e1 L L1 θ www.umw-ic.com UMW AO3422A Dimensions In Millimeters Min. Max. 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP. 1.800 2.000 0.550 REF. 0.300 0.500 0° 8° 3 Dimensions In Inches Min. Max. 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP. 0.071 0.079 0.022 REF. 0.012 0.020 0° 8° 友台半导体有限公司