SI2301B

UMW R UMW SI2301B UMW SI2301B P-Channel 20-V(D-S) MOSFET V(BR)DSS ID RDS(on)MAX   120 mΩ@-4.5V  -20 V SOT-23 2.5 A 150 mΩ@-2.5V   1. GATE 2. SOURCE 3. DRAIN APPLICATION z Load Switch for Portable Devices z DC/DC Converter FEATURE TrenchFET Power MOSFET MARKING Equivalent Circuit A1SHB Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ=150℃) ID -2.5 Pulsed Drain Current IDM -10 Continuous Source-Drain Diode Current IS -0.72 Maximum Power Dissipation PD 0.35 W Thermal Resistance from Junction to Ambient(t ≤ 5s) Rθ JA 357 ℃/W Junction Temperature TJ 150 Storage Temperature Tstg -55 ~+150 www.umw-ic.com 1 Unit V A ℃ 友台半导体有限公司 UMW R UMW SI2301B Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Units Static Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =-250µA -20 Gate-source threshold voltage VGS(th) VDS =VGS, ID =-250µA -0.4 -1 V Gate-source leakage IGSS VDS =0V, VGS =±8V ±100 nA Zero gate voltage drain current IDSS VDS =-20V, VGS =0V -1 µA Drain-source on-state resistance a Forward transconductance RDS(on) a gfs VGS =-4.5V, ID =-2.8A 0.095 0.120 VGS =-2.5V, ID =-2.0A 0.120 0.150 VDS =-5V, ID =-2.8A 4.0 Ω S b Dynamic Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf 405 VDS =-10V,VGS =0V,f =1MHz pF 75 55 VDS =-10V,VGS =-4.5V,ID =-3A VDS =-10V,VGS =-2.5V,ID =-3A 5.5 10 3.3 6 0.7 nC 1.3 f =1MHz VDD=-10V, RL=10Ω, ID =-1A, VGEN=-4.5V,Rg=1Ω 6.0 Ω 11 20 35 60 30 50 10 20 ns Drain-source body diode characteristics Continuous source-drain diode current Pulse diode forward current Body diode voltage a IS -1.3 TC=25℃ -10 ISM VSD A IS=-0.7A -0.8 -1.2 V Notes : a.Pulse Test : Pulse Width < 300µs, Duty Cycle ≤2%. b.Guaranteed by design, not subject to production testing. www.umw-ic.com 2 友台半导体有限公司 UMW R Symbol A A1 A2 b c D E E1 e e1 L L1 θ www.umw-ic.com UMW SI2301B Dimensions In Millimeters Min. Max. 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP. 1.800 2.000 0.550 REF. 0.300 0.500 0° 8° 3 Dimensions In Inches Min. Max. 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP. 0.071 0.079 0.022 REF. 0.012 0.020 0° 8° 友台半导体有限公司