SM4805PRL

C C03C -30V /-9A Dual 2P Power MOSFET SM4805PRL -30V /-9A Dual 2P Power MOSFET C V General Description DS RDS(on),TYP@VGS=10V RDS(on),TYP@VGS=4.5 ID -30V /-9A Dual 2P Power MOSFET Very low on-resistance RDS(on) @ VGS=4.5 V Pb-free lead plating; RoHS compliant Part ID Package Type Marking Tape and reel infomation SM4805PRL SOP8 4805 3000 Parameter 9C03C -30 V 2.1 mΩ 3.3 mΩ -9 A 100% UIS Tested 100% Rg Tested Symbol Maximum Units Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS 25 ±V Continuous Drain Current A Pulsed Drain Current Avalanche Current TA=25°C TA=70°C B Power Dissipation G -14.4 IAR -2.9 EAR -6.6 TA=25°C A A mJ 2 PD TA=70°C Junction and Storage Temperature Range -7.0 IDM G Repetitive avalanche energy L=0.1mH -9.0 ID W 1.3 -55 to 150 TJ, TSTG °C Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A Steady State Maximum Junction-to-Lead V01 C Steady State 1 www.sourcechips.com RθJA RθJL Typ Max Units 7 11 °C/W 15 18 °C/W 4 7 °C/W STATIC PARAMETERS Symbol BVDSS Parameter Drain-Source Breakdown Voltage -30V /-9A Dual 2P Power MOSFET Conditions ID = -250uA, VGS = 0V IDSS Zero Gate Voltage Drain Current VDS=-30V, VGS=0V IGSS Gate-Body leakage current VDS = 0V, VGS = ±20V VGS(th) Gate Threshold Voltage VDS = VGS ID = 250µA RDS(ON) Static Drain-Source OnResistance gFS VSD IS Min SM4805PRL Typ Max -30 Units V -1 -5 uA ±100 nA -2.1 -2.8 V VGS=-10V, ID=-9A 2.1 3.0 VGS=-4.5V, ID=-9A 3.3 4.3 Forward Transconductance VDS=-5V, ID=-9A 99 Diode Forward Voltage IS=-1A,VGS=0V -0.72 -1.4 mΩ S -1 V -9 A Typ Max Units 2060 2513 pF 370 455 pF 295 351 pF 5 Ω Max Units Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Conditions Min VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Symbol Parameter Qg (10V) Total Gate Charge Qg 4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge 10 tD(on) Turn-On DelayTime 15 tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time Body Diode Reverse Recovery Time trr Qrr V01 Body Diode Reverse Recovery Charge Conditions Min Typ 30 VGS=-10V, VDS=-15V, ID=-9A VGS=-10V, VDS=-15V,RL=0.75 Ω, RGEN=3Ω 0 7 12 42 nC ns 13.5 IF=-8A, dI/dt=500A/µs 30 ns IF=18A, dI/dt=500A/µs 22 nC 2 www.sourcechips.com -30V /-9A Dual 2P Power MOSFET V01 3 www.sourcechips.com SM4805PRL -30V /-9A Dual 2P Power MOSFET V01 4 www.sourcechips.com SM4805PRL