HSBA3052

HSBA3052 N-Ch 30V Fast Switching MOSFETs Description Product Summary The HSBA3052 is the high cell density Trench MOSFET, which provide excellent RDSON and gate charge for DC/DC converters application. The HSBA3052 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. ⚫ ⚫ ⚫ ⚫ ⚫ 100% EAS Guaranteed Green Device Available Super Low Gate Charge Low RDS(ON) Advanced high cell density Trench technology VDS 30 V RDS(ON),TYP 5 mΩ ID 52 A PRPAK5X6 Pin Configuration Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 52 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 33 A ID@TA=25℃ Continuous Drain Current, VGS @ 10V1 25 A ID@TA=70℃ 10V1 20 A 125 A 28.8 mJ 24 A 24 W IDM EAS IAS PD@TC=25℃ Continuous Drain Current, VGS @ Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-Ambient RθJC Thermal Resistance Junction-Case1 www.hs-semi.cn Ver 2.0 Typ. 1 Max. Unit --- 50 ℃/W --- 4.6 ℃/W 1 HSBA3052 N-Ch 30V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance 2 VGS(th) IDSS Gate Threshold Voltage Drain-Source Leakage Current Conditions Min. Typ. Max. Unit VGS=0V , ID=250uA 30 --- --- V VGS=10V , ID=20A --- 5 6.3 VGS=4.5V , ID=15A --- 6.9 9 VGS=VDS , ID =250uA 1.2 --- 2.5 VDS=24V , VGS=0V , TJ=25℃ --- --- 1 VDS=24V , VGS=0V , TJ=55℃ --- --- 5 --- ±100 nA m V uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- gfs Forward Transconductance VDS=5V , ID=20A --- 67 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.7 ---  Qg Total Gate Charge (4.5V) --- 8 --- Qgs Gate-Source Charge --- 2.4 --- Qgd Gate-Drain Charge --- 3.2 --- Turn-On Delay Time --- 7.1 --- Td(on) Tr Td(off) Tf Ciss VDS=15V , VGS=4.5V , ID=15A Rise Time VDD=15V , VGS=10V , RG=3.3 --- 40 --- Turn-Off Delay Time ID=15A --- 15 --- --- 6 --- --- 814 --- --- 498 --- --- 41 --- Fall Time Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=15V , VGS=0V , f=1MHz nC ns pF Diode Characteristics Symbol Min. Typ. Max. Unit Continuous Source Current 1,6 VG=VD=0V , Force Current --- --- 30 A VSD Diode Forward Voltage 2 VGS=0V , IS=1A , TJ=25℃ --- --- 1 V trr Reverse Recovery Time IF=20A , di/dt=100A/µs , --- 15 --- nS Qrr Reverse Recovery Charge TJ=25℃ --- 25 --- nC IS Parameter Conditions Note : 1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is V DD=25V,VGS=10V,L=0.1mH,IAS=24A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and I DM , in real applications , should be limited by total power dissipation. www.hs-semi.cn Ver 2.0 2 HSBA3052 N-Ch 30V Fast Switching MOSFETs Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs G-S Voltage Fig.3 Source Drain Forward Characteristics Fig.4 Gate-Charge Characteristics 1.8 Normalized On Resistance 1.8 1.4 Normalized VGS(th) 1.4 1.0 1 0.6 0.6 0.2 0.2 -50 0 50 100 150 -50 0 50 100 TJ ,Junction Temperature (℃ ) TJ , Junction Temperature (℃) Fig.5 Normalized VGS(th) vs TJ Fig.6 Normalized RDSON vs TJ www.hs-semi.cn Ver 2.0 150 3 HSBA3052 N-Ch 30V Fast Switching MOSFETs Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 P DM 0.01 T ON T D = TON/T SINGLE TJpeak = TC+P DMXRθJC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance EAS= VDS 90% BVDSS 1 L x IAS2 x 2 BVDSS BVDSS-VDD VDD IAS 10% VGS Td(on) Tr Ton Td(off) Tf Toff VGS Fig.10 Switching Time Waveform www.hs-semi.cn Fig.11 Unclamped Inductive Switching Waveform Ver 2.0 4