BC857BS-Q
PNP general purpose double transistor
29 June 2021
Product data sheet
1. General description
PNP general-purpose double transistor in a very small SOT363 (SC-88) Surface-Mounted Device
(SMD) plastic package. NPN complement: BC847BS-Q.
2. Features and benefits
•
•
•
•
•
•
Low collector capacitance
Low collector-emitter saturation voltage
Closely matched current gain
Reduces number of components and boardspace
No mutual interference between the transistors
Qualified according to AEC-Q101 and recommended for use in automotive applications
3. Applications
•
General purpose switching and amplification.
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
open base
-
-
-45
V
-
-
-100
mA
200
-
450
Per transistor
VCEO
collector-emitter
voltage
IC
collector current
hFE
DC current gain
VCE = -5 V; IC = -2 mA; Tamb = 25 °C
BC857BS-Q
Nexperia
PNP general purpose double transistor
5. Pinning information
Table 2. Pinning information
Pin
Symbol
Description
1
E1
emitter TR1
2
B1
base TR1
3
C2
collector TR2
4
E2
emitter TR2
5
B2
base TR2
6
C1
collector TR1
Simplified outline
Graphic symbol
C1
6
5
B2
4
TR2
TR1
1
2
3
TSSOP6 (SOT363)
E1
E2
B1
C2
sym138
6. Ordering information
Table 3. Ordering information
Type number
Package
BC857BS-Q
Name
Description
Version
TSSOP6
plastic, surface-mounted package; 6 leads; 0.65 mm pitch; SOT363
2.1 mm x 1.25 mm x 0.95 mm body
7. Marking
Table 4. Marking codes
Type number
Marking code[1]
BC857BS-Q
3F%
[1]
% = placeholder for manufacturing site code
BC857BS-Q
Product data sheet
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BC857BS-Q
Nexperia
PNP general purpose double transistor
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCBO
collector-base voltage
open emitter
-
-50
V
VCEO
collector-emitter voltage
open base
-
-45
V
VEBO
emitter-base voltage
open collector
-
-5
V
IC
collector current
-
-100
mA
ICM
peak collector current
-
-200
mA
IBM
peak base current
-
-200
mA
Ptot
total power dissipation
-
200
mW
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
-65
150
°C
Tstg
storage temperature
-65
150
°C
-
300
mW
Per transistor
single pulse; tp ≤ 1 ms
Tamb ≤ 25 °C
[1]
Per device
Ptot
[1]
total power dissipation
Tamb ≤ 25 °C
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided, 35 µm copper, tin-plated and standard footprint.
aaa-030173
500
Ptot
(mW)
400
(1)
300
200
100
0
-75
-25
25
75
125
175
Tamb (°C)
(1) FR4 PCB, single-sided, 35 μm copper, tin-plated and standard footprint
Fig. 1.
Per device: Power derating curves
BC857BS-Q
Product data sheet
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BC857BS-Q
Nexperia
PNP general purpose double transistor
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
-
-
568
K/W
-
-
230
K/W
-
-
416
K/W
Per transistor
Rth(j-a)
thermal resistance from in free air
junction to ambient
Rth(j-sp)
thermal resistance from
junction to solder point
[1]
Per device
Rth(j-a)
[1]
thermal resistance from in free air
junction to ambient
[1]
Device mounted on an FR4 PCB, single-sided, 35 µm copper, tin-plated and standard footprint.
aaa-032927
103
duty cycle = 1
Z
(K/W)
0.50
th(j-a)
102
0.75
0.33
0.20
0.10
0.05
0.02
10
0.01
0
1
10-5
10-4
10-3
10-2
10-1
1
10
102
tp (s
103
FR4 PCB, single-sided, 35 µm copper, tin-plated and standard footprint
Fig. 2.
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
BC857BS-Q
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BC857BS-Q
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PNP general purpose double transistor
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per transistor
V(BR)CBO
collector-base
breakdown voltage
IC = -100 µA; IE = 0 A; Tamb = 25 °C
50
-
-
V
V(BR)CEO
collector-emitter
breakdown voltage
IC = -2 mA; IB = 0 A; Tamb = 25 °C
45
-
-
V
V(BR)EBO
emitter-base
breakdown voltage
IC = 0 A; IE = -100 µA; Tamb = 25 °C
5
-
-
V
ICBO
collector-base cut-off
current
VCB = -30 V; IE = 0 A; Tamb = 25 °C
-
-
-15
nA
VCB = -30 V; IE = 0 A; Tj = 150 °C
-
-
-5
µA
IEBO
emitter-base cut-off
current
VEB = -5 V; IC = 0 A; Tamb = 25 °C
-
-
-100
nA
hFE
DC current gain
VCE = -5 V; IC = -2 mA; Tamb = 25 °C
200
-
450
VCEsat
collector-emitter
saturation voltage
IC = -10 mA; IB = -0.5 mA; Tamb = 25 °C
-
-
-100
mV
IC = -100 mA; IB = -5 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
-
-
-400
mV
VBEsat
base-emitter saturation IC = -10 mA; IB = -0.5 mA; Tamb = 25 °C
voltage
-
-755
-
mV
VBE
base-emitter voltage
VCE = -5 V; IC = 2 mA; Tamb = 25 °C
-600
-655
-750
mV
Cc
collector capacitance
VCB = -10 V; IE = 0 A; ie = 0 A;
f = 1 MHz; Tamb = 25 °C
-
-
2.2
pF
Ce
emitter capacitance
VEB = -0.5 V; IC = 0 A; ic = 0 A;
f = 1 MHz; Tamb = 25 °C
-
10
-
pF
fT
transition frequency
VCE = -5 V; IC = -10 mA; f = 100 MHz;
Tamb = 25 °C
100
-
-
MHz
NF
noise figure
VCE = -5 V; IC = -0.2 mA; RS = 2 kΩ;
f = 1 kHz; B = 200 Hz; Tamb = 25 °C
-
2
-
dB
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PNP general purpose double transistor
006aab425
600
VBE
mV
(1)
hFE
mld700
- 1200
- 1000
400
(1)
- 800
(2)
(2)
- 600
200
(3)
(3)
- 400
0
- 10- 1
Fig. 3.
-1
- 10
- 102
IC (mA)
- 103
- 200
- 10- 2
- 10- 1
-1
VCE = -5 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
VCE = -5 V
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
PNP transistor: DC current gain as a function of Fig. 4.
collector current; typical values
PNP TR2: Base-emitter voltage as a function of
collector current; typical values
mld701
- 104
VCEsat
(mV)
mld702
- 1200
VBEsat
(mV)
- 1000
(1)
- 103
(2)
- 800
- 102
- 10
- 10- 1
(3)
- 600
(1)
(2)
- 400
(3)
Fig. 5.
- 102
- 103
IC (mA)
- 10
-1
- 10
- 102
IC (mA)
- 103
- 200
- 10- 1
-1
- 10
- 102
IC (mA)
- 103
IC/IB = 20
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig. 6.
PNP TR2: Collector-emitter saturation voltage
as a function of collector current; typical values
PNP TR2: Base-emitter saturation voltage as a
function of collector current; typical values
BC857BS-Q
Product data sheet
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PNP general purpose double transistor
006aab426
- 0.20
IB (mA) = - 3.5
IC
(A)
- 0.15
- 3.15
- 2.8
- 2.45
- 2.1
- 1.75
- 1.4
fT
(Hz)
- 1.05
- 0.7
- 0.10
006aab427
109
108
- 0.35
- 0.05
0
0
-1
-2
-3
-4
VCE (V)
107
- 10- 1
-5
Tamb = 25 °C
Fig. 7.
PNP transistor: Collector current as a function
of collector-emitter voltage; typical values
-1
- 10
IC (mA)
- 102
Tamb = 25 °C;
VCE = -5 V;
f = 100 MHz
Fig. 8.
PNP transistor: Transition frequency as a
function of collector current; typical values
11. Test information
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
BC857BS-Q
Product data sheet
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PNP general purpose double transistor
12. Package outline
Plastic surface-mounted package; 6 leads
SOT363
D
B
E
y
A
X
HE
6
5
v M A
4
Q
pin 1
index
A
1
2
e1
A1
3
bp
c
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.8
0.1
0.30
0.20
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.25
0.15
0.2
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
SOT363
Fig. 9.
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-11-08
06-03-16
SC-88
Package outline TSSOP6 (SOT363)
BC857BS-Q
Product data sheet
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PNP general purpose double transistor
13. Soldering
2.65
solder lands
2.35 1.5
0.4 (2×)
0.6 0.5
(4×) (4×)
solder resist
solder paste
0.5
(4×)
0.6
(2×)
occupied area
0.6
(4×)
Dimensions in mm
1.8
sot363_fr
Fig. 10. Reflow soldering footprint for TSSOP6 (SOT363)
1.5
solder lands
0.3 2.5
4.5
1.5
solder resist
occupied area
Dimensions in mm
1.3
preferred transport
direction during soldering
1.3
2.45
5.3
sot363_fw
Fig. 11. Wave soldering footprint for TSSOP6 (SOT363)
BC857BS-Q
Product data sheet
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PNP general purpose double transistor
14. Revision history
Table 8. Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
BC857BS-Q
Product data sheet
-
-
BC857BS-Q
Product data sheet
20210629
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BC857BS-Q
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PNP general purpose double transistor
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no liability for inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
15. Legal information
Data sheet status
Document status
[1][2]
Product
status [3]
Definition
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
Preliminary [short]
data sheet
Qualification
This document contains data from
the preliminary specification.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
Product [short]
data sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the internet at https://www.nexperia.com.
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with the same product type number(s) and title. A short data sheet is
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
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BC857BS-Q
Product data sheet
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PNP general purpose double transistor
Contents
1. General description...................................................... 1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking.......................................................................... 2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 4
10. Characteristics............................................................ 5
11. Test information.......................................................... 7
12. Package outline.......................................................... 8
13. Soldering..................................................................... 9
14. Revision history........................................................10
15. Legal information......................................................11
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Nexperia B.V. 2021. All rights reserved
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Date of release: 29 June 2021
BC857BS-Q
Product data sheet
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