SESD3Z12C

SHANGHAI June 2006 MICROELECTRONICS CO., LTD. SESD3ZxxC Transient Voltage Suppressors for ESD Protection General Description Revision:B Features The SESD3ZxxC is designed to protect voltage z Small Body Outline Dimensions sensitive components from ESD and transient voltage z Low Body Height events. Excellent clamping capability, low leakage, and z Peak Power up to 350 Watts @ 8 x 20 µs Pulse fast response time, make these parts ideal for ESD z Low Leakage current protection on designs where board space is at a z Response Time is Typically < 1 ns premium. z ESD Rating of Class 3 (> 16 kV) per Human Body Model Applications z Cellular phones Complies with the following standards z Portable devices IEC61000-4-2 z Digital cameras Level 4 z Power supplies 15 kV (air discharge) 8 kV(contact discharge) MIL STD 883E - Method 3015-7 Class 3 25 kV HBM (Human Body Model) Functional diagram SOD-323 Absolute Ratings (Tamb=25°C) Symbol Parameter Value Units PPK Peak Pulse Power (tp = 8/20μs) 350 W TL Maximum lead temperature for soldering during 10s 260 °C Tstg Storage Temperature Range -55 to +155 °C Top Operating Temperature Range -40 to +125 °C TJ Maximum junction temperature 150 °C ShangHai Sino-IC Microelectronics Co., Ltd. 1. SESD3ZxxC Electrical Parameter Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR IT VBR Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM Test Current Breakdown Voltage @ IT Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified. VBR C IT VRWM Typ. IR Min. Typ. Max. V V V mA V µA pF SESD3Z5C 5.4 6.7 7.8 1 5.0 1 200 SESD3Z12C 13.3 14.5 15.7 1 12.0 1 100 Part Numbers （Note1） 1. Capacitance is measured at f=1MHz, VR=0V,TA=25℃. Typical Characteristics Fig1. Pulse Waveform ShangHai Sino-IC Microelectronics Co., Ltd. Fig2.Power Derating Curve 2. SESD3ZxxC Application Note Electrostatic discharge (ESD) is a major cause of failure in electronic systems. Transient Voltage Suppressors (TVS) are an ideal choice for ESD protection. They are capable of clamping the incoming transient to a low enough level such that damage to the protected semiconductor is prevented. Surface mount TVS offers the best choice for minimal lead inductance. They serve as parallel protection elements, connected between the signal lines to ground. As the transient rises above the operating voltage of the device, the TVS becomes a low impedance path diverting the transient current to ground. The SESD3ZxxC is the ideal board evel protection of ESD sensitive semiconductor components. The tiny SOD-323 package allows design flexibility in the design of high density boards where the space saving is at a premium. This enables to shorten the routing and contributes to hardening against ESD. SOD-323 Mechanical Data Dimensions Dim Inches Mil Min Max Min Max A 0.060 0.071 1.5 1.8 B 0.045 0.054 1.2 1.4 C 0.060 0.107 2.3 2.7 D - 0.043 - 1.1 E 0.012 0.016 0.3 0.4 F 0.004 0.010 0.10 0.25 H - 0.004 - 0.10 CONTROLLILNG DIMENSION: MILLIMETERS The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics Co., Ltd. © 2005 SINO-IC – Printed in China – All rights reserved. SHANGHAI SINO-IC MICROELECTRONICS CO., LTD Add: Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-Tech Park, Pudong, Shanghai 201203, China Phone: +86-21-33932402 33932403 33932405 33933508 33933608 Fax: +86-21-33932401 Email: szrxw002@126.com Website: http://www.sino-ic.net ShangHai Sino-IC Microelectronics Co., Ltd. 3.