US1JF

山东晶导微电子有限公司 US1AF THRU US1MF Jingdao Microelectronics SURFACE MOUNT ULTRAFAST RECOVERY RECTIFIER Reverse Voltage - 50 to 1000 V PINNING Forward Current - 1 A PIN FEATURES • For surface mounted applications • Low profile package • Glass Passivated Chip Junction • Easy to pick and place • High efficiency • Lead free in comply with EU RoHS 2011/65/EU directives DESCRIPTION 1 Cathode 2 Anode 1 2 Top View Marking Code: US1A~US1M Simplified outline SMAF and symbol MECHANICAL DATA • Case: SMAF • Terminals: Solderable per MIL-STD-750, Method 2026 • A pprox. Weight: 27mg / 0.00095oz Maximum Ratings and Electrical characteristics Ratings at 25 °C ambient temperature unless otherwise specified. Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %. Symbols Parameter US1AF US1BF US1DF US1GF US1JF US1KF US1MF Units Maximum Repetitive Peak Reverse Voltage V RRM 50 100 200 400 600 800 1000 V Maximum RMS voltage V RMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage V DC 50 100 200 400 600 800 1000 V Maximum Average Forward Rectified Current at T c = 125 °C I F(AV) 1 A Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load I FSM 30 A Maximum Instantaneous Forward Voltage at 1 A VF Maximum DC Reverse Current T a = 25 °C at Rated DC Blocking Voltage T a =125 °C Maximum Reverse Recovery Time （1） Typical Thermal Resistance （2） Operating and Storage Temperature Range 1.0 1.3 5 100 IR t rr 1.65 μA 75 50 V ns RθJA 80 °C/W T j , T stg -55 ~ +150 °C （1）Measured with I F = 0.5 A, I R = 1 A, I rr = 0.25 A . （2）P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas. 2016.01 SMAF-U-US1MF-1A1KV Page 1 of 3 山东晶导微电子有限公司 US1AF THRU US1MF Jingdao Microelectronics Fig.2 Typical Reverse Characteristics 1.2 1.0 0.8 0.6 0.4 0.2 Single phase half-wave 60 Hz resistive or inductive load 0.0 25 50 75 100 125 150 175 Instaneous Reverse Current（μ A） Average Forward Current (A) Fig.1 Forward Current Derating Curve 100 T J =125°C 10 1.0 T J =25°C 0.1 00 Peak Forward Surage Current (A) Instaneous Forward Current (A) 10 T J =25°C 1.0 US1AF~US1DF US1GF US1JF~US1MF 0.01 0.001 0 0.5 1.0 1.5 2.0 60 80 100 120 140 35 30 25 20 15 10 05 8.3 ms Single Half Sine Wave (JEDEC Method) 00 2.5 Instaneous Forward Voltage (V) 2016.01 40 Fig.4 Maximum Non-Repetitive Peak Forward Surage Current Fig.3 Typical Forward Characteristics 0.1 20 percent of Rated Peak Reverse Voltage (%) Case Temperature (°C) 1 10 100 Number of Cycles www.sdjingdao.com Page 2 of 3 山东晶导微电子有限公司 US1AF THRU US1MF Jingdao Microelectronics PACKAGE OUTLINE Plastic surface mounted package; 2 leads SMAF ∠ALL ROUND C A ∠ALL ROUND HE g Top View mil Bottom View A C D E e g HE max 1.2 0.20 3.7 2.7 1.6 1.2 4.9 min 0.9 0.12 3.3 2.4 1.3 0.8 4.4 max 47 7.9 146 106 63 47 193 min 35 4.7 130 94 51 31 173 UNIT mm g pad e E A pad D E A V M 7° The recommended mounting pad size Marking Type number 2.2 (86) 1.6 (63) 1.8 (71) 1.6 (63) mm Unit ： (mil) 2016.01 ∠ JD512254B6 Marking code US1AF US1A US1BF US1B US1DF US1D US1GF US1G US1JF US1J US1KF US1K US1MF US1M Page 3 of 3