SESDFBP05C

SHANGHAI June 2006 MICROELECTRONICS CO., LTD. SESDFBP05C Single Line ESD Protection Diode Revision:B General Description Features The SESDFBP05C ESD protection diode is designed z Equivalent to 0402 package replace portable z 120W peak pulse power applications such as cell phones, notebook computers, and z Small package for use in portable electionics PDA’s. They feature large cross-sectional area junctions for z Standoff voltage : 5V conducting high transient currents, offer desirable electrical z Low leakage current characteristics for board level protection, such as fast z These are Pb−Free Devices to multilayer varistors (MLVs) in response time, lower operating voltage, lower clamping voltage and no device degradation when compared to MLVs. Applications Complies with the following standards z Cellular phones handsets and Accessories IEC61000-4-2 z PDA’s Level 4 z MP3 players z Digital cameras z Portable applications z mobile telephone 15 kV (air discharge) 8 kV(contact discharge) MIL STD 883E - Method 3015-7 Class 3 25 kV HBM (Human Body Model) Functional diagram WBFBP-02L Maximum Ratings Symbol Parameter IEC 61000-4-2 (ESD) Contact Value Unit 8 kV PPK Peak Pulse Power 120 W IPP Peak Pulse Power 12 A -55 to 150 ℃ 260 ℃ TJ,TSTG TL Junction and Storage Temperature Range Lead Solder Temperature – Maximum (10 Second Duration) ShangHai Sino-IC Microelectronics Co., Ltd. 1 SESDFBP05C Electrical Parameter Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR IT VBR Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM Test Current Breakdown Voltage @ IT Electrical Characteristics (TA=25℃ unless otherwise noted, VF=0.9V Max. @ IF=10mA for all types) Part VBR Numbers SESDFBP05C IT VRWM IR C Min. Typ. Max. Typ. 0v bias V V V mA V µA pF 6.1 6.6 7.2 1 5.0 1 10 Typical Characteristics Figure 1. Non-Repetitive Peak Pulse Power Fig 2. Power Derating Curve versus Pulse Time ShangHai Sino-IC Microelectronics Co., Ltd. 2 SESDFBP05C Figure 3. Clamping Voltage vs. Peak Pulse Current Figure 4. Forward Voltage vs. Forward Current Figure 5.Junction Capacitance vs. Reverse Voltage Fig 6. ESD Clamping (8kV Contact per IEC 61000-4-2) WBFBP-02L Mechanical Data ShangHai Sino-IC Microelectronics Co., Ltd. 3 SESDFBP05C The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics Co., Ltd. © 2005 SINO-IC – Printed in China – All rights reserved. SHANGHAI SINO-IC MICROELECTRONICS CO., LTD Add: Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-Tech Park, Pudong, Shanghai 201203, China Phone: +86-21-33932402 33932403 33932405 33933508 33933608 Fax: +86-21-33932401 Email: szrxw002@126.com Website: http://www.sino-ic.net ShangHai Sino-IC Microelectronics Co., Ltd. 4