BUK7S1R2-40H
N-channel 40 V, 1.2 mΩ standard level MOSFET in LFPAK88
28 September 2022
Product data sheet
1. General description
Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction
technology, housed in a copper-clip LFPAK88 package. This product has been fully designed and
qualified to meet beyond AEC-Q101 requirements delivering high performance and reliability.
2. Features and benefits
•
•
•
•
•
Fully automotive qualified to beyond AEC-Q101:
• -55 °C to +175 °C rating suitable for thermally demanding environments
LFPAK88 package:
• Designed for smaller footprint and improved power density over older wire bond packages
such as D²PAK for today’s space constrained high power automotive applications
• Thin package and copper clip enables LFPAK88 to be highly efficient thermally
LFPAK copper clip technology enabling improvements over wire bond packages by:
• Increased maximum current capability and excellent current spreading
• Improved RDSon
• Low source inductance
• Low thermal resistance Rth
LFPAK Gull Wing leads:
• Flexible leads enabling high Board Level Reliability absorbing mechanical and thermal
cycling stress, unlike traditional QFN packages
• Visual (AOI) soldering inspection, no need for expensive x-ray equipment
• Easy solder wetting for good mechanical solder joint
Unique 40 V Trench 9 superjunction technology:
• Reduced cell pitch and superjunction platform enables lower RDSon in the same footprint
• Improved SOA and avalanche capability compared to standard TrenchMOS
• Tight VGS(th) limits enable easy paralleling of MOSFETs
3. Applications
•
•
•
•
•
•
12 V automotive systems
48 V DC/DC systems (on 12 V secondary side)
Higher power motors, lamps and solenoid control
Reverse polarity protection
LED lighting
Ultra high performance power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
25 °C ≤ Tj ≤ 175 °C
-
-
40
V
ID
drain current
VGS = 10 V; Tmb = 25 °C; Fig. 2
-
-
300
A
Ptot
total power dissipation
Tmb = 25 °C; Fig. 1
-
-
294
W
[1]
BUK7S1R2-40H
Nexperia
N-channel 40 V, 1.2 mΩ standard level MOSFET in LFPAK88
Symbol
Parameter
Conditions
Tj
junction temperature
Min
Typ
Max
Unit
-55
-
175
°C
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 11
0.74
1.06
1.2
mΩ
VGS = 10 V; ID = 25 A; Tj = 105 °C;
Fig. 12
1.05
1.59
1.9
mΩ
ID = 25 A; VDS = 32 V; VGS = 10 V;
Fig. 13; Fig. 14
-
14
28
nC
-
80
112
nC
-
-
277
mJ
-
38
-
nC
Static characteristics
RDSon
drain-source on-state
resistance
Dynamic characteristics
QGD
gate-drain charge
QG(tot)
total gate charge
Avalanche ruggedness
EDS(AL)S
non-repetitive drainsource avalanche
energy
ID = 120 A; Vsup ≤ 40 V; RGS = 50 Ω;
VGS = 10 V; Tj(init) = 25 °C; unclamped;
Fig. 4
[2] [3]
Source-drain diode
Qr
[1]
[2]
[3]
[4]
recovered charge
IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V; [4]
VDS = 20 V
300A continuous current has been successfully demonstrated during application. Practically the current will be limited by PCB, thermal
design and operating emperature.
Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
Refer to application note AN10273 for further information.
includes capacitive recovery
5. Pinning information
Table 2. Pinning information
Pin
Symbol
Description
Simplified outline
1
G
gate
2
S
source
3
S
source
4
S
source
mb
D
mounting base; connected
to drain
Graphic symbol
D
G
1
2
3
4
mbb076
S
LFPAK88 (SOT1235)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
BUK7S1R2-40H
LFPAK88
plastic, single-ended surface-mounted package
(LFPAK88); 4 leads; 2 mm pitch; 8 mm x 8 mm x 1.6 mm
body
SOT1235
BUK7S1R2-40H/A002
LFPAK88
plastic, single-ended surface-mounted package
(LFPAK88); 4 leads; 2 mm pitch; 8 mm x 8 mm x 1.6 mm
body
SOT1235
BUK7S1R2-40H
Product data sheet
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BUK7S1R2-40H
Nexperia
N-channel 40 V, 1.2 mΩ standard level MOSFET in LFPAK88
7. Marking
Table 4. Marking codes
Type number
Marking code
BUK7S1R2-40H
7S1R240H
BUK7S1R2-40H/A002
7S1R240H
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
25 °C ≤ Tj ≤ 175 °C
-
40
V
VGS
gate-source voltage
DC; Tj ≤ 175 °C
-10
20
V
Ptot
total power dissipation
Tmb = 25 °C; Fig. 1
-
294
W
ID
drain current
VGS = 10 V; Tmb = 25 °C; Fig. 2
-
300
A
IDM
peak drain current
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3
-
1341
A
Tstg
storage temperature
-55
175
°C
Tj
junction temperature
-55
175
°C
-
294
A
-
1341
A
[1]
Source-drain diode
IS
source current
Tmb = 25 °C
ISM
peak source current
pulsed; tp ≤ 10 µs; Tmb = 25 °C
[2]
Avalanche ruggedness
EDS(AL)S
non-repetitive drainID = 120 A; Vsup ≤ 40 V; RGS = 50 Ω;
source avalanche energy VGS = 10 V; Tj(init) = 25 °C; unclamped;
Fig. 4
[3] [4]
-
277
mJ
IAS
non-repetitive avalanche Vsup ≤ 40 V; VGS = 10 V; Tj(init) = 25 °C;
current
RGS = 50 Ω; Fig. 4
[5]
-
199
A
[1]
[2]
[3]
[4]
[5]
300A continuous current has been successfully demonstrated during application. Practically the current will be limited by PCB, thermal
design and operating emperature.
294A continuous current has been successfully demonstrated during application. Practically the current will be limited by PCB, thermal
design and operating temperature.
Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
Refer to application note AN10273 for further information.
Protected by 100% test.
BUK7S1R2-40H
Product data sheet
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BUK7S1R2-40H
Nexperia
N-channel 40 V, 1.2 mΩ standard level MOSFET in LFPAK88
03aa16
120
aaa-030587
400
ID
(A)
Pder
(%)
300
(1)
80
200
40
100
0
Fig. 1.
0
50
100
150
Tmb (°C)
0
200
25
50
75
100
125
150 175
Tmb (°C)
Normalized total power dissipation as a
function of mounting base temperature
Continuous drain current as a function of
mounting base temperature
aaa-030589
104
103
102
200
VGS ≥ 10 V
(1) 300A continuous current has been successfully
demonstrated during application tests. Practically
the current will be limited by PCB, thermal design
and operating temperature.
Fig. 2.
ID
(A)
0
Limit RDSon = VDS / ID
tp = 10 µs
DC
100 µs
10
1 ms
10 ms
100 ms
1
10-1
10-1
1
10
VDS (V)
102
Tmb = 25 °C; IDM is a single pulse
Fig. 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK7S1R2-40H
Product data sheet
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BUK7S1R2-40H
Nexperia
N-channel 40 V, 1.2 mΩ standard level MOSFET in LFPAK88
IAL
(A)
aaa-030588
103
102
(1)
(2)
10
(3)
1
10-1
10-3
10-2
10-1
1
tAL (ms)
10
(1) Tj (init) = 25 °C; (2) Tj (init) = 150 °C; (3) Repetitive Avalanche
Fig. 4.
Avalanche rating; avalanche current as a function of avalanche time
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Rth(j-mb)
Conditions
thermal resistance from Fig. 5
junction to mounting
base
Min
Typ
Max
Unit
-
0.45
0.51
K/W
aaa-030590
1
Zth(j-mb)
(K/W)
δ = 0.5
10-1 0.2
0.1
0.05
10-2
0.02
single shot
P
δ=
Fig. 5.
10-5
10-4
10-3
10-2
T
t
tp
10-3
10-6
tp
T
10-1
tp (s)
1
Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7S1R2-40H
Product data sheet
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BUK7S1R2-40H
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N-channel 40 V, 1.2 mΩ standard level MOSFET in LFPAK88
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ID = 250 µA; VGS = 0 V; Tj = 25 °C
40
43
-
V
ID = 250 µA; VGS = 0 V; Tj = -40 °C
-
40.5
-
V
ID = 250 µA; VGS = 0 V; Tj = -55 °C
36
40
-
V
ID = 1 mA; VDS=VGS; Tj = 25 °C; Fig. 9;
Fig. 10
2.4
3
3.6
V
ID = 1 mA; VDS=VGS; Tj = -55 °C; Fig. 10
-
-
4.3
V
ID = 1 mA; VDS=VGS; Tj = 175 °C;
Fig. 10
1
-
-
V
VDS = 40 V; VGS = 0 V; Tj = 25 °C
-
0.06
1.2
µA
VDS = 16 V; VGS = 0 V; Tj = 125 °C
-
1.6
25
µA
VDS = 40 V; VGS = 0 V; Tj = 175 °C
-
180
500
µA
VGS = 20 V; VDS = 0 V; Tj = 25 °C
-
2
100
nA
VGS = -10 V; VDS = 0 V; Tj = 25 °C
-
2
100
nA
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 11
0.74
1.06
1.2
mΩ
VGS = 10 V; ID = 25 A; Tj = 105 °C;
Fig. 12
1.05
1.59
1.9
mΩ
VGS = 10 V; ID = 25 A; Tj = 125 °C;
Fig. 12
1.16
1.76
2.1
mΩ
VGS = 10 V; ID = 25 A; Tj = 175 °C;
Fig. 12
1.46
2.21
2.6
mΩ
f = 1 MHz; Tj = 25 °C
0.4
1.05
2.6
Ω
ID = 25 A; VDS = 32 V; VGS = 10 V;
Fig. 13; Fig. 14
-
80
112
nC
-
22
33
nC
-
14
28
nC
-
6014
8420
pF
-
1352
1893
pF
-
244
537
pF
-
19
-
ns
-
16
-
ns
Static characteristics
V(BR)DSS
VGS(th)
IDSS
IGSS
RDSon
RG
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
gate resistance
Dynamic characteristics
QG(tot)
total gate charge
QGS
gate-source charge
QGD
gate-drain charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer
capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
-
50
-
ns
tf
fall time
-
22
-
ns
VDS = 25 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; Fig. 15
VDS = 30 V; RL = 1.2 Ω; VGS = 10 V;
RG(ext) = 5 Ω
Source-drain diode
VSD
source-drain voltage
IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 16
-
0.77
1
V
trr
reverse recovery time
-
39
-
ns
Qr
recovered charge
IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 20 V
[1]
-
38
-
nC
BUK7S1R2-40H
Product data sheet
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BUK7S1R2-40H
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N-channel 40 V, 1.2 mΩ standard level MOSFET in LFPAK88
Symbol
Parameter
Conditions
Min
Typ
Max
S
softness factor
IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 20 V; Tj = 25 °C
-
0.82
-
IS = 25 A; dIS/dt = -500 A/µs; VGS = 0 V;
VDS = 20 V; Tj = 25 °C
-
0.73
-
[1]
Unit
includes capacitive recovery
aaa-030591
400
ID
(A)
RDSon
(mΩ)
VGS = 5.5 V
320
240
3
5V
6V
aaa-030592
4
7V
2
10 V
160
4.5 V
1
80
4V
0
Fig. 6.
0
1
2
3
VDS (V)
0
4
0
4
8
12
16
VGS (V)
20
Tj = 25 °C
Tj = 25 °C; ID = 25 A
Output characteristics; drain current as a
Fig. 7.
function of drain-source voltage; typical values
Drain-source on-state resistance as a function
of gate-source voltage; typical values
aaa-030593
400
aaa-018138
10-1
ID
(A)
ID
(A)
320
10-2
240
10-3
160
10-4
175°C
80
25°C
Min
Typ
Max
10-5
Tj = -55°C
0
0
1
2
3
4
5
VGS (V)
10-6
6
VDS = 8 V
Fig. 8.
Product data sheet
1
2
3
4
VGS (V)
5
Tj = 25 °C; VDS = 5 V
Transfer characteristics; drain current as a
function of gate-source voltage; typical values
BUK7S1R2-40H
0
Fig. 9.
Sub-threshold drain current as a function of
gate-source voltage
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BUK7S1R2-40H
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N-channel 40 V, 1.2 mΩ standard level MOSFET in LFPAK88
VGS(th)
(V)
aaa-018139
5
RDSon
(mΩ)
4
aaa-030594
4
4.5 V
5V
3.2
Max
3
5.5 V
2.4
Typ
2
1.6
Min
1
0
-60
0.8
-30
0
30
60
90
120 150
Tj (°C)
0
180
ID = 1 mA ; VDS = VGS
0
80
VGS = 10 V
7V
160
240
320
ID (A)
400
Tj = 25 °C
Fig. 10. Gate-source threshold voltage as a function of
junction temperature
a
6V
Fig. 11. Drain-source on-state resistance as a function
of drain current; typical values
aaa-026897
2.4
VGS
(V)
2
aaa-030595
10
8
1.6
6
1.2
32 V
4
0.8
VDS = 14 V
2
0.4
0
-60
-30
0
30
60
90
120 150
Tj (°C)
0
180
0
15
30
45
60
75
QG (nC)
90
Tj = 25 °C; ID = 25 A
Fig. 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
BUK7S1R2-40H
Product data sheet
Fig. 13. Gate-source voltage as a function of gate
charge; typical values
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BUK7S1R2-40H
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N-channel 40 V, 1.2 mΩ standard level MOSFET in LFPAK88
aaa-030596
104
C
(pF)
VDS
Ciss
ID
Coss
103
VGS(pl)
Crss
102
VGS(th)
VGS
QGS2
QGS1
QGS
10
10-1
QGD
QG(tot)
10
VDS (V)
102
VGS = 0 V; f = 1 MHz
003aaa508
Fig. 14. Gate charge waveform definitions
1
Fig. 15. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
aaa-030597
400
IS
(A)
320
240
160
175°C
80
Tj = 25°C
-55°C
0
0
0.2
0.4
0.6
0.8
1
VSD (V)
1.2
VGS = 0 V
Fig. 16. Source-drain (diode forward) current as a function of source-drain (diode forward) voltage; typical values
BUK7S1R2-40H
Product data sheet
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BUK7S1R2-40H
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N-channel 40 V, 1.2 mΩ standard level MOSFET in LFPAK88
11. Package outline
Plastic single-ended surface-mounted package (LFPAK88); 4 leads
SOT1235
b2
E1
D1
A1
C
A3
θ
L
y C
detail X
A
A2
E
c2
mounting
base
D
H
L2
1
2
3
e
e
4
e
c
b
(4x)
w
X
A
0
4
8 mm
scale
Dimensions (mm are the original dimensions)
Unit
max
nom
min
mm
A1
A2
0.15
1.7
0.00
1.5
A3
0.25
b
b2
c
c2
D(1)
D1(1)
E(1)
E1(1)
1.1
7.3
0.24
0.55
6.3
5.1
8.1
6.9
0.9
7.1
0.18
0.45
6.1
4.9
7.9
6.7
e
2.0
H(1)
L
L2
8.1
0.8
1.3
7.8
0.6
0.9
w
y
0.25
0.10
Note
1. Plastic or metal protrusions of 0.2 mm maximum per side are not included.
Outline
version
References
IEC
JEDEC
JEITA
θ
8°
0°
sot1235_po
European
projection
Issue date
17-08-02
17-08-07
SOT1235
Fig. 17. Package outline LFPAK88 (SOT1235)
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BUK7S1R2-40H
Nexperia
N-channel 40 V, 1.2 mΩ standard level MOSFET in LFPAK88
12. Soldering
Footprint information for reflow soldering of LFPAK88 package
SOT1235
9.2
8.8
8.6
0.3
1.85
1.7
2.05
0.1
1.76
0.2
2.1
0.7
1.2
0.2
0.7
1.25
0.2
4.275
5.7
2.925
1.15
3.74
9.4
7.8
0.2
1.225
1.9
1.6 1.4 1.3
1.6
6.55
6.8
7
1.2
1.1
2
1.4
7.8
recommended stencil thickness: 0.125 mm
occupied area
solder resist
solder land
solder paste
Dimensions in mm
Issue date
18-12-12
18-12-13
sot1235_fr
Fig. 18. Reflow soldering footprint for LFPAK88 (SOT1235)
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BUK7S1R2-40H
Nexperia
N-channel 40 V, 1.2 mΩ standard level MOSFET in LFPAK88
equipment, nor in applications where failure or malfunction of an Nexperia
product can reasonably be expected to result in personal injury, death or
severe property or environmental damage. Nexperia and its suppliers accept
no liability for inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
13. Legal information
Data sheet status
Document status
[1][2]
Product
status [3]
Definition
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
Preliminary [short]
data sheet
Qualification
This document contains data from
the preliminary specification.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
Product [short]
data sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the internet at https://www.nexperia.com.
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the relevant
full data sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement be
valid in which the Nexperia product is deemed to offer functions and qualities
beyond those described in the Product data sheet.
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to be accurate and reliable. However, Nexperia does not give any
representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. Nexperia takes no responsibility
for the content in this document if provided by an information source outside
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damages are based on tort (including negligence), warranty, breach of
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Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia accepts no liability for
any assistance with applications or customer product design. It is customer’s
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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BUK7S1R2-40H
Product data sheet
All information provided in this document is subject to legal disclaimers.
28 September 2022
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Nexperia B.V. 2022. All rights reserved
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BUK7S1R2-40H
Nexperia
N-channel 40 V, 1.2 mΩ standard level MOSFET in LFPAK88
Contents
1. General description...................................................... 1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking.......................................................................... 3
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 5
10. Characteristics............................................................ 6
11. Package outline........................................................ 10
12. Soldering................................................................... 11
13. Legal information......................................................12
©
Nexperia B.V. 2022. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 28 September 2022
BUK7S1R2-40H
Product data sheet
All information provided in this document is subject to legal disclaimers.
28 September 2022
©
Nexperia B.V. 2022. All rights reserved
13 / 13