HX3401

SOT-23-3 Plastic-Encapsulate Transistors HX3401MOSFET(P-Channel) FEATURES High Power and current handing capability Lead free product is acquired Surface Mount Package MARKING: X18V MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source voltage -30 V VGS Gate-Source voltage ±12 V ID Drain current -4.2 A PD Power Dissipation 1.2 W Tj Junction Temperature -55-150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃unless otherwise specified) Parameter Symbol Test conditions MIN Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=-250uA -30 Gate-Threshold Voltage Vth(GS) VDS= VGS, ID=-250 uA -0.7 Gate-body Leakage IGSS VDS=0V, VGS=±12V Zero Gate Voltage Drain Current IDSS VDS=-30V, VGS=0V TYP MAX UNIT -1 -1.4 V ±100 nA V 1 uA VGS=-2.5V, ID=-1A 55 90 mΩ 75 mΩ Drain-Source On-Resistance RDS(ON) VGS=-4.5V, ID=-4A 52 VGS=-10V, ID=-4.2A 48 mΩ Forward Trans conductance gfs VDS=-5V, ID=-4.2A 10 s VDS=-15V, VGS=0V, f=1MHz 115 Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 880 pF 70 Switching Capacitance Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-off Delay Time td(off) Turn-off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDD=-15V, ID=-4.2A, VGS=-10V RGEN=6Ω VDS=-15V, ID=-4A, VGS=-4.5V, 7 nS 3 nS 30 nS 12 nS 9.5 nC 2 nC 3 nC Drain-Source Diode Characteristics Diode Forward Voltage VSD VGS=0V, ID=-1A -1.2 V 1