ESD56181W04-2/TR

ESD56181WXX ESD56181WXX 1-Line, Uni-directional, Transient Voltage Suppressor http//:www.sh-willsemi.com Descriptions The ESD56181WXX is a transient voltage suppressor designed to protect power interfaces. It is suitable to replace multiple discrete components in portable electronics. The ESD56181WXX is specifically designed to protect power lines. SOD-323 The ESD56181WXX is available in SOD-323 package. Standard products are Pb-free and Halogen-free. Features Pin1  Reverse stand-off voltage: 4.5V ~ 20V  Surge protection according to IEC61000-4-5 see Table 4  Pin2 Circuit diagram ESD protection according to IEC61000-4-2 ±30kV (contact and air discharge)  Low clamping voltage  Solid-state silicon technology Applications  Power supply protection X= Device code  Power management * = Month code Marking (Top View) Order information Table 1. Device Package Shipping Marking ESD56181W04-2/TR SOD-323 3000/Tape&Reel TQ* ESD56181W05-2/TR SOD-323 3000/Tape&Reel TR* ESD56181W09-2/TR SOD-323 3000/Tape&Reel TL* ESD56181W10-2/TR SOD-323 3000/Tape&Reel TS* ESD56181W12-2/TR SOD-323 3000/Tape&Reel TM* ESD56181W15-2/TR SOD-323 3000/Tape&Reel TN* ESD56181W18-2/TR SOD-323 3000/Tape&Reel TT* ESD56181W20-2/TR SOD-323 3000/Tape&Reel TU* Will Semiconductor Ltd. 1 Revision 1.2, 2018/02/28 ESD56181WXX Absolute maximum ratings Table 2. Parameter Peak pulse power (tp = 8/20μs) ESD according to IEC61000-4-2 air discharge Symbol Rating Unit Ppk 1800 W ±30 VESD ESD according to IEC61000-4-2 contact discharge Junction temperature ±30 TJ Operating temperature TOP Lead temperature TL Storage temperature TSTG kV 125 o -40~85 o 260 o -55~150 o C C C C Electrical characteristics (TA = 25oC, unless otherwise noted) I IPP VF Forward voltage VRWM Reverse stand-off voltage IF Forward current IR Reverse leakage current VFC Forward clamping voltage VBR Reverse breakdown voltage IPP Peak pulse current VCL Clamping voltage IPP Peak pulse current VFC VF IBR IR VRWM VBR VCL V IF IPP Definitions of electrical characteristics Will Semiconductor Ltd. 2 Revision 1.2, 2018/02/28 ESD56181WXX o Electrical characteristics (TA = 25 C, unless otherwise noted) Table 3. Reverse Stand-off Type number Voltage Breakdown voltage VBR(V) IBR = 1mA VRWM (V) Junction Reverse leakage current IRM(μA) at VRWM Forward voltage capacitance VF(V) IF = 20mA F = 1MHz, VR=0V (pF) Max. Min. Typ. Max. Typ. Max. Min. Max. Typ. Max. ESD56181W04 4.5 5.2 5.7 6.2 - 2.0 0.60 1.10 1100 1200 ESD56181W05 5.0 6.6 7.1 7.6 - 1.0 0.60 1.10 1050 1150 ESD56181W09 9.0 9.7 10.5 11.3 - 0.1 0.60 1.10 600 700 ESD56181W10 10.0 10.7 11.5 12.3 - 0.1 0.60 1.10 545 650 ESD56181W12 12.0 12.8 13.6 14.5 - 0.1 0.60 1.10 425 500 ESD56181W15 15.0 16.0 17.5 19.0 - 0.1 0.60 1.10 320 350 ESD56181W18 18.0 19.2 21.1 23.0 - 0.1 0.60 1.10 260 300 ESD56181W20 20.0 21.4 23.2 25.0 - 0.1 0.60 1.10 240 275 Table 4. Type number Rated peak pulse current IPP （A） 1)2) Clamping voltage 1)2) VCL(V) at IPP（A） Max. Typ. Max. ESD56181W04 110 12.5 15 ESD56181W05 100 13.5 16 ESD56181W09 90 17.0 20 ESD56181W10 85 19.0 21 ESD56181W12 75 21.5 24 ESD56181W15 55 27.5 30 ESD56181W18 45 33.0 35 ESD56181W20 40 34.5 37 Notes: 1) Non-repetitive current pulse, according to IEC61000-4-5. (8/20μs current waveform) 2) Non-repetitive current pulse, according to IEC61000-4-2. 3) Measured from pin 1 to pin 2. Will Semiconductor Ltd. 3 Revision 1.2, 2018/02/28 ESD56181WXX o 100 90 Front time: T1= 1.25 T = 8μs 100 90 Time to half-value: T2= 20μs Current (%) Peak pulse current (%) Electrical characteristics (TA = 25 C, unless otherwise noted) 50 T2 10 10 0 0 T 5 10 T1 15 Time (μs) 20 25 10 30 Peak pulse power (kW) VC - Clamping voltage (V) Pulse waveform: tp = 8/20s ESD56181W20 ESD56181W18 ESD56181W15 25 ESD56181W12 20 ESD56181W10 ESD56181W09 15 ESD56181W05 10 5 ESD56181W04 0 20 Time (ns) Contact discharge current waveform per IEC61000-4-2 8/20μs waveform per IEC61000-4-5 35 tr = 0.7~1ns t 60ns 30ns 30 40 60 80 100 120 1 0.1 140 IPP - Peak pulse current (A) Clamping voltage vs. Peak pulse current 1 10 100 Pulse time (s) 1000 Non-repetitive peak pulse power vs. Pulse time 2.5 IR -Leakage current (μA) % of Rated power 100 80 60 40 20 0 2.0 1.5 1.0 0.5 0.0 0 25 50 75 100 125 150 ESD56181W04 ESD56181W05 -40 -20 0 20 40 60 80 100 o TA - Ambient temperature ( C) TA - Ambient temperature ( C) Power derating vs. Ambient temperature Leakage current vs. Ambient temperature o Will Semiconductor Ltd. 4 Revision 1.2, 2018/02/28 ESD56181WXX PACKAGE OUTLINE DIMENSIONS SOD-323 D A2 A1 b E D1 A Side View L1 L c θ Top View Side View Dimensions in Millimeters Symbol Min. Typ. Max. A 0.800 - 1.100 A1 0.800 0.850 0.900 A2 0.000 - 0.100 b 0.250 - 0.400 c 0.080 - 0.177 D1 1.600 1.700 1.800 D 2.300 - 2.800 E 1.150 - 1.400 L 0.475 Ref. L1 0.100 - 0.500 θ 0° - 8° Recommended land pattern (Unit: mm) 0.80 1.40 Notes: 0.80 This recommended land pattern is for reference purposes only. Please consult your manufacturing group to ensure your PCB design guidelines are met. Will Semiconductor Ltd. 5 Revision 1.2, 2018/02/28 ESD56181WXX TAPE AND REEL INFORMATION RD Reel Dimensions W Tape Dimensions P1 Quadrant Assignments For PIN1 Orientation In Tape Q1 Q2 Q1 Q2 Q3 Q4 Q3 Q4 RD Reel Dimension W Overall width of the carrier tape P1 Pitch between successive cavity centers Pin1 Pin1 Quadrant Will Semiconductor Ltd. 7inch 13inch 1 8mm 12mm 16mm 2mm 4mm 8mm Q1 Q2 Q3 6 Q4 Revision 1.2, 2018/02/28