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SCT12A1DHKR

SCT12A1DHKR

  • 厂商:

    SCT(芯洲科技)

  • 封装:

    DFN20L_3.5X4.5MM

  • 描述:

    SCT12A1DHKR

  • 数据手册
  • 价格&库存
SCT12A1DHKR 数据手册
SCT12A1 SILICON CONTENT TECHNOLOGY 2.7V-14V Vin, 30W Fully Integrated Synchronous Boost Converter with Load Disconnection Control FEATURES              Wide Input Voltage Range: 2.7V-14.0V Wide Output Voltage Range: 4.5V-14.6V Fully Integrated 13mΩ High Side FET and 11mΩ Low Side FET Up to 92% Efficiency at Vin=3.6V, Vout=9V, and Iout=3A Up to 12A Switch Current and Programmable Peak Current Limit Load Disconnection Control with an External PChannel MOSFET Typical Shut-down Current: 1uA Programmable Switching Frequency: 200kHz2.2MHz Selectable PFM or Forced PWM Mode Programmable Soft Start Output and Feedback Overvoltage Protection Thermal Shutdown Protection: 150°C Available in DFN-20 3.5mmx4.5mm Package APPLICATIONS      DESCRIPTION Bluetooth Audio Power Banks POS System E-Cigarette USB Power Delivery The SCT12A1 is a high efficiency synchronous boost converter with fully integrated a 13mΩ high-side MOSFET and an 11mΩ low-side MOSFET, supporting 2.7V to 14V input voltage range and up to 12-A switch current. The switch current limit can be adjustable with an external resistor. The SCT12A1 adapts constant off-time peak current control to provide fast transient. An external compensation network allows flexibility setting loop dynamics to achieve optimal transient performance at different load conditions. Using MODE pin selects either Pulse Frequency Modulation (PFM) operation or forced Pulse Width Modulation (PWM) operation. The SCT12A1 offers the gate control for an external P-channel MOSFET to disconnect load from boost converter output. This safety feature prevents the damage on load from input shooting through to output in shutdown or output hard short to ground condition. The SCT12A1 monitors both output voltage and feedback voltage to protect overvoltage condition. It features cycle-by-cycle peak current limit and thermal shutdown protection when the device over loads. The device is available in a low-profile package DFN20L 3.5mmx4.5mmx0.9mm with enhanced thermal power pad. TYPICAL APPLICATION Efficiency, Vout=9V For more information www.silicontent.com ©2016 Silicon Content Technology Co., Ltd. All Rights Reserved Product folder link: SCT12A1 1 SCT12A1 REVISION HISTORY NOTE: Page numbers for previous revisions may differ from page numbers in the current version. DEVICE ORDER INFORMATION PART NUMBER PACKAGE MARKING PACKAGE DISCRIPTION SCT12A1 12A1 20-Lead 3.5mm×4.5mm Plastic DFN ABSOLUTE MAXIMUM RATINGS MIN BOOT -0.3 MAX UNIT 23.5 V AGND DESCRIPTION Top View: 20-Lead Plastic DFN 3.5mmx4.5mm VCC Over operating free-air temperature unless otherwise PIN CONFIGURATION noted(1) ILIM EN VIN, SW, VOUT, FSW, FSW PGATE -0.3 18 COMP SW V FB VOUT SW -0.3 VCC, LIM,FB, EN,SS, COMP, MODE, ENPGATEZ Operating junction temperature 125 V PGND C SW VOUT SW VOUT BOOT MODE VIN ENPGATEZ Storage temperature TSTG (1) (2) -65 150 C PGATE (2) SS TJ -40 5.5 Stresses beyond those listed under Absolute Maximum Rating may cause device permanent damage. The device is not guaranteed to function outside of its Recommended Operation Conditions. The IC includes over temperature protection to protect the device during overload conditions. Junction temperature will exceed 150°C when over temperature protection is active. Continuous operation above the specified maximum operating junction temperature will reduce lifetime PIN FUNCTIONS NAME VCC 1 EN 2 FSW 3 SW 2 NO. 4,5,6,7 BOOT 8 VIN 9 SS 10 PGATE 11 PIN FUNCTION Internal linear regulator output. Connect a 1uF or larger ceramic capacitor to ground. VCC cannot to be externally driven. No additional components or loading is recommended on this pin. Enable logic input. A 800KΩ resistor connects this pin to ground inside. Floating disables the device. Place a resistor from this pin to SW to set the switching frequency. Switching node of the boost converter. Power supply for the high-side FET gate driver. Must connect a 0.1uF or greater ceramic capacitor between BOOT pin and SW node. Power supply input. Must be locally bypassed with a capacitor as close as possible to the pin. Place a ceramic cap from this pin to ground to program soft-start time. An internal 5uA current source pulls SS pin to VCC. Gate driver output for an external P-channel MOSFET to disconnect load. For more information www.silicontent.com © 2016 Silicon Content Technology Co., Ltd. Product foler link: SCT12A1 All Rights Reserved SCT12A1 ENPGATEZ 12 MODE 13 VOUT 14,15,16 Connect the pin to ground to enable the load disconnection control. Directly short to thermal pad under IC to reduce the C6 ground loop if grounding. 400KΩ internal resistor connects this pin to VCC. Floating disables the load disconnection protection. Operation mode selection. 270KΩ internal resistor connects this pin to VCC. Floating or Logic high enables PFM mode. Logic low enables forced PWM mode. Boost converter output. Connect a 1uF decoupling capacitor as close to VOUT pins and power ground pad as possible to reduce the ringing voltage of SW. Feedback Input. Connect a resistor divider from VOUT to FB to set up output voltage. The device regulates FB to the internal reference value of 1.2V typical. Output of the error amplifier and switching converter loop compensation point. Inductor peak current limit set point input. A resistor connecting this pin to ground sets current limit through low-side power FET. FB 17 COMP 18 ILIM 19 AGND 20 Analog ground. Analog ground should be used as the common ground for all small signal analog inputs and compensation components. No electrical connection to PGND inside. PGND 21 Power ground. Must be soldered directly to ground planes using multiple vias directly under the IC for improved thermal performance and electrical contact. RECOMMENDED OPERATING CONDITIONS Over operating free-air temperature range unless otherwise noted PARAMETER VIN VOUT TJ DEFINITION Input voltage range Output voltage range Operating junction temperature MIN MAX UNIT 2.7 4.5 -40 14 14.6 125 V V °C MIN MAX UNIT -2 +2 kV -0.5 +0.5 kV ESD RATINGS PARAMETER VESD DEFINITION Human Body Model (HBM), per ANSI-JEDEC-JS-0012014 specification, all pins (1) Charged Device Model (CDM), per ANSI-JEDEC-JS-0022014specification, all pins (2) (1) HBM and CDM stressing are done in accordance with the ANSI/ESDA/JEDEC JS-001-2014 specification THERMAL INFORMATION PARAMETER RθJA RθJC THERMAL METRIC Junction to ambient thermal resistance (1) Junction to case thermal resistance (1) DFN-20L 38 39 UNIT °C/W (1) SCT provides RθJA and RθJC numbers only as reference to estimate junction temperatures of the devices. RθJA and RθJC are not a characteristic of package itself, but of many other system level characteristics such as the design and layout of the printed circuit board (PCB) on which the SCT12A1 is mounted, thermal pad size, and external environmental factors. The PCB board is a heat sink that is soldered to the leads and thermal pad of the SCT12A1. Changing the design or configuration of the PCB board changes the efficiency of the heat sink and therefore the actual RθJA and RθJC. For more information www.silicontent.com © 2016 Silicon Content Technology Co., Ltd. All Rights Reserved Product folder link: SCT12A1 3 SCT12A1 ELECTRICAL CHARACTERISTICS VIN=3.6V, TJ=-40°C~125°C, typical values are tested under 25°C. SYMBO L PARAMETER TEST CONDITION MIN Power Supply and Output VIN Operating input voltage VOUT Output voltage range VIN_UVLO Input UVLO Hysteresis ISD Shutdown current IQ VCC Quiescent current from VIN Quiescent current from VOUT Internal linear regulator TYP 2.7 4.5V VIN rising EN=0, no load and measured on VIN pin EN=2V, no load, no switching ENPGATEZ=floating IVCC=5mA, VIN=6V MAX UNIT 14 V 14.6 V 2.6 200 2.7 V mV 1 3 uA 1 120 4.8 150 uA uA V 1.220 1.228 100 V V nA Reference and Control Loop 1.170 1.192 1.202 1.210 Reference voltage of FB IFB FB pin leakage current GEA VCOMP=1.5V 190 uS VFB=VREF-200mV, VCOMP=1.5V 20 uA ICOMP_SNK Error amplifier trans-conductance Error amplifier maximum source current Error amplifier maximum sink current VFB=VREF+200mV, VCOMP=1.5V 20 uA VCOMP_H COMP high clamp VFB=1V, RILIM=100KΩ 1.5 V VCOMP_L COMP low clamp VFB=1.5V, RILIM=100KΩ,PFM 0.6 V Power MOSFETs RDSON_H High side FET on-resistance 13 mΩ RDSON_L 11 mΩ ICOMP_SRC Low side FET on-resistance Current Limit ILIM Peak current limit Enable and Mode Enable high threshold VEN Enable low threshold REN Enable pull down resistance RMODE MODE high threshold MODE low threshold MODE pull-up resistance ISS Soft-start charging current VMODE RILIM=100kΩ 10.5 12 13 A 1.2 V V kΩ 4 270 V V kΩ 5 uA kHz VCC=5V 0.4 800 VCC=5V 1.5 Switching Frequency FSW Switching frequency RFSW=301k, VOUT=12V 500 tON_MIN Minimum on-time RFSW=301k, VOUT=12V 150 200 ns tOFF_MIN Minimum off-time RFSW=301k, VFB=0V 100 150 ns 4 V Load Disconnection Control VENPGATEZ_ ENPGATEZ voltage high threshold H VENPGATEZ_ L RENPGATEZ 4 FPWM mode PSM mode VFB=1.2V VREF ENPGATEZ voltage low threshold VCC=5V VCC=5V ENPGATEZ internal pull up resistance For more information www.silicontent.com © 2016 Silicon Content Technology Co., Ltd. Product foler link: SCT12A1 1.5 V 400 All Rights Reserved kΩ SCT12A1 SYMBO L IPGATE VPGATE_C PARAMETER TEST CONDITION PGATE pull down current Clamp voltage between PGATE and VOUT MIN TYP MAX 60 7.1 UNIT uA 8 V Protection VOVP_VOUT VOVP_VFB TSD Output overvoltage threshold Hysteresis Feedback overvoltage with respect to reference voltage Thermal shutdown threshold Hysteresis VOUT rising VFB rising VFB falling TJ rising 15.4 250 110 105 150 20 V mV % % °C °C TYPICAL CHARACTERISTICS Figure 1. Efficiency, Vout=9V, fsw=560KHz, PFM Figure 3. Efficiency, Vout=12V, fsw=560KHz, 1-cell Battery Figure 2. Efficiency, Vout=9V, fsw=560KHz, PWM Figure 4. Efficiency, Vout=12V, fsw=560KHz, 2-cells Battery For more information www.silicontent.com © 2016 Silicon Content Technology Co., Ltd. All Rights Reserved Product folder link: SCT12A1 5 SCT12A1 16 Switch Peak Current Limit 14 12 10 8 6 4 2 0 50 100 150 200 250 300 350 Resistance (K Ohm) Figure 5. Switching Frequency vs FSW Resistance Figure 6. Inductor Peak Current Limit vs RLIM Resistance 600 160 Quiescent Current (uA) 140 Frequency (KHz) 590 580 570 560 120 100 80 60 40 20 550 0 -40 -20 0 20 40 60 Temperature 80 (OC) 100 120 140 -40 0 40 60 80 100 120 140 Figure 8. Quiescent Current vs Temperature 1.222 1.5 1.22 1.3 1.218 1.2 1.216 Reference Voltage (V) 1.4 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 1.214 1.212 1.21 1.208 1.206 1.204 1.202 1.2 1.198 PFM PWM 1.196 0.1 0 1.194 -40 -20 0 20 40 60 80 100 120 140 -60 -40 -20 Temperature (OC) Figure 9. Shutdown Current vs Temperature 6 20 Temperature (OC) Figure 7. Frequency vs Temperature Shutdown Current (uA) -20 0 20 40 60 80 100 120 140 160 Temperature (OC) Figure 10. Feedback Reference Voltage vs Temperature For more information www.silicontent.com © 2016 Silicon Content Technology Co., Ltd. Product foler link: SCT12A1 All Rights Reserved SCT12A1 Figure 11. Load Regulation (Vin=3.6V, Vout=9V) Figure 12. Line Regulation FUNCTIONAL BLOCK DIAGRAM UVLO VIN 9 VCC BOOT SW SW SW SW 1 8 4 5 6 7 OTP UVLO Q2 BOOT Regulator LDO Thermal Sensor FB VOUT Q1 HSD OC Detect 11 Load Disconnect Control Q Q S R PGATE Selection Mode Selection GM ON/OFF and Protection VIN 34pF ENPGATEZ 17 FB 10 SS 18 COMP 1.2V UVLO OVP OTP V/I 1/N 3 12 LDP + FSW VOUT 5uA + 13 16 400k + + MODE VOUT VCC ENP 270k 15 OVP Dead Time and PWM Control Logic LDP ENP VCC VOUT OVP + + PGATE 14 800k 1.2V 2 21 19 20 EN PGND ILIM AGND For more information www.silicontent.com © 2016 Silicon Content Technology Co., Ltd. All Rights Reserved Product folder link: SCT12A1 7 SCT12A1 OPERATION Overview The SCT12A1 device is a fully integrated synchronous boost converter, which regulates output voltage higher than input voltage. The constant off-time peak current mode control provides fast transient with pseudo fixed switching frequency. When low-side MOSFET Q1 turns on, input voltage forces the inductor current rise. Sensed voltage on low-side MOSFET peak current rises above the voltage of COMP. After the inductor current reaches the peak current, the device turns off low-side MOSFET and inductor goes through body diode of high-side MOSFET Q2 during dead time. After dead time duration, the device turns on high-side MOSFET Q2 and the inductor current decreases. Based on Vin and Vout voltage, the device predicts required off-time and turns off high-side MOSFET Q2. This repeats on cycle-by-cycle based. The voltage feedback loop regulates the FB voltage to a 1.2V reference with an internal trans-conductance error amplifier. The feedback loop stability and transient response are optimized through an external loop compensation network connected to the COMP pin. The mode selection offers flexibility of design between forced Pulse Width Modulation (PWM) and Pulse Frequency Modulation (PFM) operations. When MODE pin is connected to VCC or floats, the SCT12A1 works at PFM mode to further increase the efficiency in light load condition. If MODE pin is connected to ground, the device works in forced PWM mode with low output voltage ripple. The quiescent current of SCT12A1 is 120uA typical under no-load condition and not switching. Disabling the device, the typical supply shutdown current is 1μA. A resistor connected between SW pin and the FSW pin sets the switching frequency. The wide switching frequency range of 200 kHz to 2.2 MHz offers optimization on efficiency or size of filter components. The SCT12A1 provides PGATE pin to control the gate of an external load disconnection P-channel MOSFET, which completely disconnects the load from the input during output hard short or shutdown condition. During start-up, the SCT12A1 gradually turns on the load disconnection switch to limit the inrush current. The protection circuitry quickly turns off the disconnection switch when any severe over-current condition happens. Hiccup mode minimizes power dissipation during prolonged output over current or short condition. The hiccup time is determined by external programmable soft-start time. The SCT12A1 device features adjustable soft-start time, cycle-by-cycle low-side FET current limit, over-voltage protection, and over-temperature protection. The SCT12A1 uses two separate ground pins to avoid ground bouncing due to the high switching current through the N-channel power MOSFET. AGND pin sets the reference for all control functions. The source of the power MOSFET connects to PGND pin. Both grounds must be connected to the thermal pad on the PCB at the closest point. VIN Power The SCT12A1 is designed to operate from an input voltage supply range between 2.7 V to 14V. If the input supply is located more than a few inches from the converter, additional bulk capacitance may be required in addition to the ceramic bypass capacitors. A typical choice is ceramic capacitor with a value of 47μF or 2 x 22uF. VCC Power The internal VCC LDO provides the bias power supply for internal circuitries. A ceramic capacitor of no less than 1uF is required to bypass from VCC pin to ground. During starting up, input of VCC LDO is from VIN pin. Once the output voltage at VOUT pin exceeds VIN voltage, VCC LDO switches its input to VOUT pin. This allows higher voltage headroom of VCC at lower input voltage. The maximum current capability of VCC LDO is 130mA typical. No additional components or loading are recommended on this pin. 8 For more information www.silicontent.com © 2016 Silicon Content Technology Co., Ltd. Product foler link: SCT12A1 All Rights Reserved SCT12A1 Under Voltage Lockout UVLO The SCT12A1 features UVLO protection for voltage rails of VIN, VCC and BOOT-SW from the converter malfunctioning and the battery over discharging. The default VIN rising threshold is 2.6V typical at startup and falling threshold is 2.4V typical at shutdown. The internal VCC LDO dropout voltage is about 100mV and the device is disabled when VCC falling trips 2.1V typical threshold. The internal charge pump from BOOT to SW powers the gate driver to high-side MOSFET Q2. The BOOT UVLO circuit monitors the capacitor voltage between BOOT pin and SW pin. When the voltage of BOOT to SW falls below a preset threshold 3V typical, high-side MOSFET Q2 turns off. As a result, the device works as a non-synchronous boost converter. Enable and Start-up When applying a voltage higher than the EN high threshold (maximum 1.2V), the SCT12A1 enables all functions and starts converter operation. To disable converter operation, EN voltage needs fall below its lower threshold (minimum 0.4V). An internal 800KΩ resistor connects EN pin to the ground. Floating EN pin automatically disables the device. The SCT12A1 features programmable soft start to prevent inrush current during power-up. SS pin sources an internal 5μA current charging an external soft-start capacitor CSS when EN pin exceeds turn-on threshold. The device uses the lower voltage between the internal voltage reference 1.2V and the SS pin voltage as the reference input voltage of error amplifier and regulates the output. The soft-start completes when SS pin voltage exceeds the internal 1.2V reference. Use equation 1 to calculate the soft-start time (10% to 90%). When EN pin is pulled low to disable the device, the SS pin will be discharged to ground. t SS = where     CSS ∗ VREF ISS (1) tSS is the soft start time VREF is the internal reference voltage of 1.2V CSS is the capacitance connecting to SS pin ISS is the source current of 5uA to SS pin Adjustable Switching Frequency The SCT12A1 features adjustable switching frequency from 200kHz to 2.2MHz. To set the switching frequency, an external resistor between SW pin and FSW pin is a must to guarantee the proper operation. Use Equation 2 or the curves in Figure 5 to determine the resistance for a given switching frequency. To reduce the solution size, one can typically set the switching frequency as higher as possible, but need to consider the tradeoff of the thermal dissipation and minimum on time of low-side power MOSFET. 6∗( 𝑅𝐹𝑅𝐸𝑄 = where:      1 𝑓𝑆𝑊 − 𝑇𝐷𝐸𝐿𝐴𝑌 ∗ 𝑉𝑂𝑈𝑇 𝑉𝐼𝑁 ) 𝐶𝐹𝑅𝐸𝑄 (2) fSW is the desired switching frequency TDELAY = 90 ns CFREQ = 34 pF VIN is the input voltage VOUT is the output voltage Adjustable Peak Current Limit The SCT12A1 boost converter implements cycle-by-cycle peak current limit function with sensing the internal lowFor more information www.silicontent.com © 2016 Silicon Content Technology Co., Ltd. All Rights Reserved Product folder link: SCT12A1 9 SCT12A1 side power MOSFET Q1 during over current condition. While the Q1 is turned on, its conduction current is monitored by the internal sensing circuitry. Once the low-side MOSFET Q1 current exceeds the limit, it turns off immediately. An external resistor connecting ILIM pin to ground sets the low-side MOSFET Q1 peak current limit threshold. Use Equation 3 or Figure 6 to calculate the peak current limit. 𝐼𝐿𝐼𝑀 = 1200 𝑅𝐿𝐼𝑀 (3) where:  ILIM is the peak current limit  RLIM is the resistance between ILIM pin to ground. This current limit function is realized by detecting the current flowing through the low-side MOSFET. The current limit feature loses function in the output hard short circuit conditions. At normal operation, when the output hard shorts to ground, there is a direct path to short the input voltage through high-side MOSFET Q2 or its body diode even the Q2 is turned off. This could damage the circuit components and cause catastrophic failure at load circuit. Load Disconnection Control (SCT Patent Filed) For both non-synchronous and synchronous boost converter, there is a non-fully controlled current path from converter input to output load through the diode or the high-side MOSFET body diode. During start up, once VIN is present, VOUT is moved to VIN level due to the direct path from input to output even when the device is shut down or the load is not ready. The presence of unwanted output voltage before system start up sequence could cause system to latch off or malfunction. When the output shorts to ground at fault condition, the direct path causes the inductor current running away, the converter active components damages, and the catastrophic failure at load circuit. To address the above issues, the SCT12A1 provides a solution to insert an external P-channel MOSFET to disconnect the load from the converter output in application as shown in Figure 13. Choosing a lower Rdson of the disconnection P-channel MOSFET Q3 reduces impact on the efficiency. The source of Q3 needs connect to VOUT pin. Output capacitor is required at both VOUT pin and the source of P-channel MOSFET to maintain the loop stability. In Figure 13, connecting ENPGATEZ pin to ground enables load disconnection features of SCT12A1. PGATE pin connecting to gate of Q3 has a constant sink current pulling down capability and a resistance pulling up capability. During SCT12A1 starting up, internal circuitry softly starts up of P-channel MOSFET. When gate-source voltage of external P-channel MOSFET is lower than the threshold voltage, the Q3 is turned on and the load is connected to VOUT pin. The source-gate voltage of external P-channel MOSFET is clamped up to 8V when the P-channel MOSFET is fully turned on. To detect if SCT12A1 has serve over loading or output hard short condition, the SCT12A1 has the current sensing scheme on internal high-side MOSFET during its turn-on state as shown Figure 13. When the high side MOSFET over current is detected, SS pin is discharged to ground and the external P-channel MOSFET is turned off immediately. The load is disconnected from the converter output. When high-side MOSFET is turned off, the SCT12A1 compares the VIN and VOUT, if VOUT is lower than VIN 1V, the SCT12A1 shuts off the external Pchannel MOSFET and disconnect the load immediately as well. If serve over current happens or output shorts to ground, the SCT12A1 minimizes the power dissipation by implementing hiccup mode as shown in Figure 14. For example, when internal high-side MOSFET over current triggers load disconnection protection, SS pin resets and the boost converter stops switching. After SS pin starts charging and reaches 1.2V, boost converter resumes to normal switching and starts to turn on P-channel MOSFET again. The hiccup time can be calculated with external capacitance on SS pin as shown in equation 1. If the fault condition disappears, the SCT12A1 resumes to normal operation automatically. In extreme application case, starting up SCT12A1 with huge output capacitor C5B and heavy load might cause over current protection. Increasing C5A capacitance accordingly enables startup normally. 10 For more information www.silicontent.com © 2016 Silicon Content Technology Co., Ltd. Product foler link: SCT12A1 All Rights Reserved SCT12A1 L1 VIN C7 SW Q2 VOUT Q1 Q3 VOUT_LOAD C5A C5B HSD OC Detect 8V HSD_OC PGATE ENPGATEZ EN_HSD S A VOUT
SCT12A1DHKR 价格&库存

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