SS14F

SS12F THRU SS120F SMAF Surface Mount Schottky Barrier Rectifier Pinning Reverse Voltage - 20 to 200 V 1.Cathode Forward Current - 1 A 2.Anode 　 　 　 　 1 FEATURES  Metal silicon junction, majority carrier conduction  For surface mounted applications  Low power loss, high efficiency 　 2 　 　 SMAF  High forward surge current capability Marking Code  For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications SS12F SS12 SS14F SS14  Lead free in comply with EU RoHS 2011/65/EU directives SS16F SS16 MECHANICAL DATA  Case: SMAF  Terminals: Solderable per MIL-STD-750, Method 2026 SS18F SS18 SS110F SS110 SS112F SS112 SS115F SS115 SS120F SS120  Approx. Weight: 27mg / 0.00095oz Absolute Maximum Ratings and Electrical characteristics Ratings at 25 ° ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load, for capacitive load, derate by 20 % Parameter Symbols SS12F SS14F SS16F SS18F SS110F SS112F SS115F SS120F Units Maximum Repetitive Peak Reverse Voltage VRRM 20 40 60 80 100 120 150 200 V Maximum RMS voltage VRMS 14 28 42 56 70 84 105 140 V Maximum DC Blocking Voltage VDC 20 40 60 80 100 120 150 200 V Maximum Average Forward Rectified Current IF(AV) Peak Forward Surge Current, 8.3ms Single Half Sinewave Superimposed On Rated Load (JEDEC method) IFSM Maximum Instantaneous Forward Voltage at 1 A VF Maximum Instantaneous Reverse Current TA = 25°C at Rated DC Reverse Voltage TA = 100°C IR Typical Junction Capacitance（1） Cj Typical Thermal Resistance （2） Operating Junction Temperature Range Storage Temperature Range 1.0 A 40 0.55 30 0.70 0.3 10 110 A 0.85 0.90 0.2 5 0.1 2 80 V mA pF RθJA 95 °C/W Tj -55 ~ +150 °C Tstg -55 ~ +150 °C （1）Measured at 1 MHz and applied reverse voltage of 4 V D.C （2）P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas. www.yfwdiode.com 1/3 Dongguan YFW Electronics Co, Ltd. SS12F THRU SS120F SMAF Fig.2 Typical Reverse Characteristics Instaneous Reverse Current ( μA) Fig.1 Forward Current Derating Curve Average Forward Current (A) 1.2 1.0 0.8 0.6 0.4 0.2 Single phase half-wave 60 Hz resistive or inductive load 0.0 25 50 75 100 125 150 10 4 10 3 T J =100°C 10 2 T J =75°C 10 1 T J =25°C 10 0 0 Case Temperature (°C) 80 100 Fig.4 Typical Junction Capacitance 500 Junction Capacitance ( pF) 20 10 1.0 SS12F/SS14F SS16F/SS18F SS110F/SS112F SS115F/SS120F 0.1 0.2 0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 T J =25°C 200 100 50 SS12F/SS14F 20 SS16F-SS120F 10 1.8 0.1 1 100 10 Instaneous Forward Voltage (V) Reverse Voltage (V) Fig.5 Maximum Non-Repetitive Peak Forward Surage Current Fig.6- Typical Transient Thermal Impedance Transient Thermal Impedance（ °C /W） Instaneous Forward Current (A) 60 Percent of Rated Peak Reverse Voltage（%） Fig.3 Typical Forward Characteristic Peak Forward Surage Current (A) 40 20 50 SS12F-SS18F SS110F-SS120F 40 30 20 10 8.3 ms Single Half Sine Wave (JEDEC Method) 00 1 10 100 Number of Cycles at 60Hz www.yfwdiode.com 1000 100 10 1 0.01 0.1 1 10 100 t, Pulse Duration（sec） 2/3 Dongguan YFW Electronics Co, Ltd. SS12F THRU SS120F SMAF SMAF Package Outline Plastic surface mounted package; 2 leads ∠ALL ROUND C A ∠ALL ROUND HE g g pad e E A pad D E A V M Top View A C D E e g HE max 1.1 0.20 3.7 2.7 1.6 1.2 4.9 min 0.9 0.12 3.3 2.4 1.3 0.8 4.4 max 43 7.9 146 106 63 47 193 min 35 4.7 130 94 51 31 173 UNIT mm mil Bottom View ∠ 7° The recommended mounting pad size 1.6 (63) 2.2 (86) 1.8 (71) 1.6 (63) mm Unit ： (mil) Summary of Packing Options Package SMAF www.yfwdiode.com Packing Description Packing Quantity Industry Standard Tape/Reel,13”reel 10000 EIA-481-1 Tape/Reel,7”reel 3000 EIA-481-1 3/3 Dongguan YFW Electronics Co, Ltd.