PSMN4R8-100BSE

PSMN4R8-100BSE N-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK 12 April 2013 Product data sheet 1. General description Standard level N-channel MOSFET in a D2PAK package qualified to 175 °C. Part of Nexperia's "NextPower Live" portfolio, the PSMN4R8-100BSE complements the latest "hot-swap" controllers - robust enough to withstand substantial inrush currents during turn on, whilst offering a low RDS(on) characteristic to keep temperatures down and efficiency up in continued use. Ideal for telecommunication systems based on a 48 V backplane / supply rail. 2. Features and benefits • • Enhanced forward biased safe operating area for superior linear mode operation Very low RDS(on) for low conduction losses 3. Applications • • • • Electronic fuse Hot swap Load switch Soft start 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 100 V IDM peak drain current pulsed; Tmb = 25 °C; tp ≤ 10 µs; Fig. 4 - - 707 A Ptot total power dissipation Tmb = 25 °C; Fig. 2 - - 405 W VGS = 10 V; ID = 25 A; Tj = 25 °C; - 4.1 4.8 mΩ Static characteristics RDSon drain-source on-state resistance Fig. 12 Dynamic characteristics QGD QG(tot) gate-drain charge VGS = 10 V; ID = 25 A; VDS = 50 V; - 59 83 nC total gate charge Fig. 14; Fig. 15 - 196 278 nC PSMN4R8-100BSE Nexperia N-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK Symbol Parameter Conditions Min Typ Max Unit VGS = 10 V; Tj(init) = 25 °C; ID = 120 A; - - 542 mJ Avalanche Ruggedness EDS(AL)S non-repetitive drainsource avalanche energy Vsup ≤ 100 V; RGS = 50 Ω; unclamped; Fig. 3 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 G gate 2 D drain[1] 3 S source mb D mounting base; connected to drain Graphic symbol mb D G mbb076 2 1 S 3 D2PAK (SOT404) [1] It is not possible to make connection to pin 2 6. Ordering information Table 3. Ordering information Type number Package PSMN4R8-100BSE Name Description Version D2PAK plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404 (one lead cropped) 7. Marking Table 4. Marking codes Type number Marking code PSMN4R8-100BSE PSMN4R8-100BSE 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 100 V VDGR drain-gate voltage Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ - 100 V VGS gate-source voltage -20 20 V PSMN4R8-100BSE Product data sheet All information provided in this document is subject to legal disclaimers. 12 April 2013 © Nexperia B.V. 2017. All rights reserved 2 / 13 PSMN4R8-100BSE Nexperia N-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK Symbol Parameter Conditions ID drain current VGS = 10 V; Tj = 25 °C; Fig. 1 VGS = 10 V; Tmb = 100 °C; Fig. 1 Min Max Unit [1] - 120 A [1] - 120 A IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 4 - 707 A Ptot total power dissipation Tmb = 25 °C; Fig. 2 - 405 W Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C Tsld(M) peak soldering temperature - 260 °C - 120 A Source-drain diode IS source current Tmb = 25 °C ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 707 A VGS = 10 V; Tj(init) = 25 °C; ID = 120 A; - 542 mJ [1] Avalanche Ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Vsup ≤ 100 V; RGS = 50 Ω; unclamped; Fig. 3 [1] Continuous current limited by package. 003aaj964 200 ID (A) 03aa16 120 Pder (%) 160 80 (1) 120 80 40 40 0 0 50 100 150 Tmb (° C) (1) Capped at 120A due to package Fig. 1. Continuous drain current as a function of mounting base temperature PSMN4R8-100BSE Product data sheet 0 200 Fig. 2. 0 100 150 Tmb (°C) 200 Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. 12 April 2013 50 © Nexperia B.V. 2017. All rights reserved 3 / 13 PSMN4R8-100BSE Nexperia N-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK IAL (A) 003aaj965 103 102 (1) (2) 10 1 10-3 Fig. 3. 10-2 10-1 1 tAL (ms) 10 Single pulse avalanche rating; avalanche current as a function of avalanche time 003aaj966 104 ID (A) 103 Limit RDSon= V DS / ID tp =10 µ s 102 100 µ s 1 ms 10 DC 10 ms 100 ms 1 10-1 10-1 Fig. 4. 1 10 102 103 VDS (V) Safe operating area; continuous and peak drain currents as a function of drain-source voltage 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base Fig. 5 - 0.3 0.37 K/W Rth(j-a) thermal resistance from junction to ambient Minimum footprint; mounted on a printed circuit board - 50 - K/W PSMN4R8-100BSE Product data sheet All information provided in this document is subject to legal disclaimers. 12 April 2013 © Nexperia B.V. 2017. All rights reserved 4 / 13 PSMN4R8-100BSE Nexperia N-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK 003aaj353 1 Zth(j-mb) (K/W) 10 δ = 0.5 -1 0.2 0.1 0.05 10 -2 P 0.02 10-3 10-6 Fig. 5. t tp single shot 10-5 10-4 10-3 10-2 tp T δ= T 10-1 1 tp (s) Transient thermal impedance from junction to mounting base as a function of pulse duration 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit ID = 250 µA; VGS = 0 V; Tj = 25 °C 100 - - V ID = 250 µA; VGS = 0 V; Tj = -55 °C 90 - - V ID = 1 mA; VDS = VGS; Tj = 25 °C; 2 3 4 V 1 - - V - - 4.6 V VDS = 100 V; VGS = 0 V; Tj = 25 °C - 0.16 10 µA VDS = 100 V; VGS = 0 V; Tj = 175 °C - - 500 µA VGS = -20 V; VDS = 0 V; Tj = 25 °C - 10 100 nA VGS = 20 V; VDS = 0 V; Tj = 25 °C - 10 100 nA VGS = 10 V; ID = 25 A; Tj = 25 °C; - 4.1 4.8 mΩ - - 8.7 mΩ - - 13 mΩ 0.43 0.85 1.7 Ω Static characteristics V(BR)DSS VGS(th) VGSth drain-source breakdown voltage gate-source threshold voltage gate-source threshold voltage Fig. 10; Fig. 11 ID = 1 mA; VDS = VGS; Tj = 175 °C; Fig. 11 ID = 1 mA; VDS = VGS; Tj = -55 °C; Fig. 11 IDSS IGSS RDSon drain leakage current gate leakage current drain-source on-state resistance Fig. 12 VGS = 10 V; ID = 25 A; Tj = 100 °C; Fig. 13; Fig. 12 VGS = 10 V; ID = 25 A; Tj = 175 °C; Fig. 12; Fig. 13 RG gate resistance PSMN4R8-100BSE Product data sheet f = 1 MHz All information provided in this document is subject to legal disclaimers. 12 April 2013 © Nexperia B.V. 2017. All rights reserved 5 / 13 PSMN4R8-100BSE Nexperia N-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK Symbol Parameter Conditions Min Typ Max Unit ID = 25 A; VDS = 50 V; VGS = 10 V; - 196 278 nC ID = 0 A; VDS = 0 V; VGS = 10 V - 166.9 234 nC gate-source charge ID = 25 A; VDS = 50 V; VGS = 10 V; - 40 56 nC QGD gate-drain charge Fig. 14; Fig. 15 - 59 83 nC VGS(pl) gate-source plateau voltage ID = 25 A; VDS = 50 V; Fig. 14; Fig. 15 - 4.3 - V Ciss input capacitance VDS = 50 V; VGS = 0 V; f = 1 MHz; - 10665 14400 pF Coss output capacitance Tj = 25 °C; Fig. 16 - 674 910 pF Crss reverse transfer capacitance - 459 643 pF td(on) turn-on delay time VDS = 50 V; RL = 2 Ω; VGS = 10 V; - 41 61.5 ns tr rise time RG(ext) = 4.7 Ω - 65 97.5 ns td(off) turn-off delay time - 127 190.5 ns tf fall time - 69 103.5 ns IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 17 - 0.79 1.2 V Dynamic characteristics QG(tot) total gate charge Fig. 14; Fig. 15 QGS Source-drain diode VSD source-drain voltage trr reverse recovery time IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V; - 72 94 ns recovered charge VDS = 50 V - 227 296 nC Qr 003aaj968 120 10 6 ID (A) 5.5 003aaj969 20 RDSon (mΩ ) 15 80 5 10 40 4.5 5 VGS (V) = 4 0 Fig. 6. 0 1 2 0 3 V (V) 4 DS 0 Output characteristics; drain current as a Fig. 7. function of drain-source voltage; typical values PSMN4R8-100BSE Product data sheet 8 12 V (V) 16 GS Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. 12 April 2013 4 © Nexperia B.V. 2017. All rights reserved 6 / 13 PSMN4R8-100BSE Nexperia N-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK 003aaj970 200 003aaj971 300 ID (A) gfs (S) 160 240 120 180 80 120 40 60 0 0 0 Fig. 8. Tj = 25 °C Tj = 150 ° C 60 120 180 240 ID (A) 300 0 Forward transconductance as a function of drain current; typical values Fig. 9. 03aa35 10- 1 ID (A) min 10- 2 typ 4 2 10- 5 1 4 VGS (V) 0 - 60 6 Fig. 10. Sub-threshold drain current as a function of gate-source voltage PSMN4R8-100BSE Product data sheet 003aad280 VGS(th) (V) max 10- 4 2 6 V (V) 8 GS 5 3 0 4 Transfer characteristics; drain current as a function of gate-source voltage; typical values 10- 3 10- 6 2 max typ min 0 60 120 Tj (°C) 180 Fig. 11. Gate-source threshold voltage as a function of junction temperature All information provided in this document is subject to legal disclaimers. 12 April 2013 © Nexperia B.V. 2017. All rights reserved 7 / 13 PSMN4R8-100BSE Nexperia N-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK 003aaj974 30 4.5 RDSon (mΩ ) 5 003aad774 3.2 5.5 a 2.4 20 1.6 10 6 0.8 V GS (V) = 10 0 0 40 80 ID (A) 0 -60 120 Fig. 12. Drain-source on-state resistance as a function of drain current; typical values 0 60 120 ID 003aaj976 8 VGS(pl) 20 V 80 V 6 VGS(th) VGS VDS = 50V 4 QGS1 180 Fig. 13. Normalized drain-source on-state resistance factor as a function of junction temperature 10 VGS (V) VDS Tj (°C) QGS2 QGS QGD QG(tot) 2 003aaa508 0 Fig. 14. Gate charge waveform definitions 0 50 100 150 200 250 Q G (nC) Fig. 15. Gate-source voltage as a function of gate charge; typical values PSMN4R8-100BSE Product data sheet All information provided in this document is subject to legal disclaimers. 12 April 2013 © Nexperia B.V. 2017. All rights reserved 8 / 13 PSMN4R8-100BSE Nexperia N-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK 003aaj977 105 003aaj978 120 IS (A) C (pF) C iss 104 80 C oss 103 Tj = 175 °C 40 Tj = 25 ° C C rss 102 0 10-1 1 10 2 VDS (V) 10 0 0.3 0.6 0.9 V (V) 1.2 SD Fig. 16. Input, output and reverse transfer capacitances Fig. 17. Source current as a function of source-drain as a function of drain-source voltage; typical voltage; typical values values PSMN4R8-100BSE Product data sheet All information provided in this document is subject to legal disclaimers. 12 April 2013 © Nexperia B.V. 2017. All rights reserved 9 / 13 PSMN4R8-100BSE Nexperia N-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK 11. Package outline Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) SOT404 A A1 E mounting base D1 D HD 2 Lp 1 3 b2 c b e e Q 0 5 mm scale Dimensions (mm are the original dimensions) Unit mm max nom min A A1 b b2 c 4.5 1.40 0.85 1.45 0.64 4.1 1.27 0.60 1.05 0.46 D D1 E 11 1.6 10.3 1.2 9.7 e 2.54 HD Lp Q 15.8 2.9 2.6 14.8 2.1 2.2 sot404_po Outline version References IEC JEDEC JEITA European projection Issue date 06-03-16 13-02-25 SOT404 Fig. 18. Package outline D2PAK (SOT404) PSMN4R8-100BSE Product data sheet All information provided in this document is subject to legal disclaimers. 12 April 2013 © Nexperia B.V. 2017. All rights reserved 10 / 13 PSMN4R8-100BSE Nexperia N-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK In no event shall Nexperia be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 12. Legal information 12.1 Data sheet status Notwithstanding any damages that customer might incur for any reason whatsoever, Nexperia’s aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of Nexperia. Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. 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The latest product status information is available on the Internet at URL http://www.nexperia.com. 12.2 Definitions Preview — The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Nexperia sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between Nexperia and its customer, unless Nexperia and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the Nexperia product is deemed to offer functions and qualities beyond those described in the Product data sheet. 12.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, Nexperia does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Nexperia takes no responsibility for the content in this document if provided by an information source outside of Nexperia. PSMN4R8-100BSE Product data sheet Suitability for use — Nexperia products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of a Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia and its suppliers accept no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Nexperia products, and Nexperia accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Nexperia product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Nexperia does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Nexperia products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Nexperia does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — Nexperia products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nexperia.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Nexperia hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Nexperia products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the All information provided in this document is subject to legal disclaimers. 12 April 2013 © Nexperia B.V. 2017. All rights reserved 11 / 13 PSMN4R8-100BSE Nexperia N-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific Nexperia product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. Nexperia accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Nexperia’s warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Nexperia’s specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Nexperia for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Nexperia’s standard warranty and Nexperia’s product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. PSMN4R8-100BSE Product data sheet All information provided in this document is subject to legal disclaimers. 12 April 2013 © Nexperia B.V. 2017. All rights reserved 12 / 13 PSMN4R8-100BSE Nexperia N-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK 13. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................2 9 Thermal characteristics .........................................4 10 Characteristics ....................................................... 5 11 Package outline ................................................... 10 12 12.1 12.2 12.3 12.4 Legal information .................................................11 Data sheet status ............................................... 11 Definitions ...........................................................11 Disclaimers .........................................................11 Trademarks ........................................................ 12 © Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 12 April 2013 PSMN4R8-100BSE Product data sheet All information provided in this document is subject to legal disclaimers. 12 April 2013 © Nexperia B.V. 2017. All rights reserved 13 / 13