1.5SMC22A

1.5SMC6.8(A)H –1.5SMC200(A)H Taiwan Semiconductor 1500W, 6.8V - 200V Surface Mount Transient Voltage Suppressor FEATURES ● ● ● ● ● ● ● ● ● ● KEY PARAMETERS AEC-Q101 qualified Ideal for automated placement Glass passivated chip junction Excellent clamping capability Meets ISO 7637-2 (Pulse 1/2a/2b/3a/3b) Fast response time: Typically less than 1.0ps Typical IR less than 1μA above 10V Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT VWM 5.5 - 171 V VBR 6.8 - 200 V PPK 1500 W TJ MAX 150 °C Package DO-214AB (SMC) Configuration Single die APPLICATIONS ● Immunization of sensitive devices in telecommunications, consumer electronics, and industrial equipment from electrostatic discharge (ESD) and transient voltages induced by load switching and lightning MECHANICAL DATA ● ● ● ● ● ● Case: DO-214AB (SMC) Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 0.210g (approximately) DO-214AB (SMC) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT PPK 1500 W PD 6.5 W IFSM 200 A VF 3.5 / 5.0 V TJ -55 to +150 °C Storage temperature TSTG -55 to +150 Notes: 1. Non-repetitive current pulse per Fig.5 and derated above TA = 25°C per Fig.2 2. VF = 3.5V on 1.5SMC6.8H - 1.5SMC91H and VF = 5.0V on 1.5SMC100H - 1.5SMC200H °C Peak power dissipation at TA = 25°C, tp = 1ms (1) Steady state power dissipation at T A = 25°C Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load for Unidirectional only (2) Forward Voltage @ IF = 50A for Unidirectional only Junction temperature Devices for Bipolar Applications 1. For bidirectional use CH or CAH suffix for types 1.5SMC6.8H - types 1.5SMC200AH 2. Electrical characteristics apply in both directions 1 Version: B2207 1.5SMC6.8(A)H –1.5SMC200(A)H Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-ambient thermal resistance RӨJA 50 °C/W Junction-to-case thermal resistance RӨJC 15 °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) Part number 1.5SMC6.8H 1.5SMC6.8AH 1.5SMC7.5H 1.5SMC7.5AH 1.5SMC8.2H 1.5SMC8.2AH 1.5SMC9.1H 1.5SMC9.1AH 1.5SMC10H 1.5SMC10AH 1.5SMC11H 1.5SMC11AH 1.5SMC12H 1.5SMC12AH 1.5SMC13H 1.5SMC13AH 1.5SMC15H 1.5SMC15AH 1.5SMC16H 1.5SMC16AH 1.5SMC18H 1.5SMC18AH 1.5SMC20H 1.5SMC20AH 1.5SMC22H 1.5SMC22AH 1.5SMC24H 1.5SMC24AH 1.5SMC27H 1.5SMC27AH 1.5SMC30H 1.5SMC30AH 1.5SMC33H 1.5SMC33AH 1.5SMC36H 1.5SMC36AH 1.5SMC39H 1.5SMC39AH 1.5SMC43H 1.5SMC43AH 1.5SMC47H 1.5SMC47AH 1.5SMC51H Marking code DDJ DEJ DFJ DGJ DHJ DKJ DLJ DMJ DNJ DPJ DQJ DRJ DSJ DTJ DUJ DVJ DWJ DXJ DYJ DZJ EDJ EEJ EFJ EGJ EHJ EKJ ELJ EMJ ENJ EPJ EQJ ERJ ESJ ETJ EUJ EVJ EWJ EXJ EYJ EZJ FDJ FEJ FFJ Breakdown voltage (Note 1) VBR@IT (V) Min 6.12 6.46 6.75 7.13 7.38 7.79 8.19 8.65 9.00 9.50 9.90 10.5 10.8 11.4 11.7 12.4 13.5 14.3 14.4 15.2 16.2 17.1 18.0 19.0 19.8 20.9 21.6 22.8 24.3 25.7 27.0 28.5 29.7 31.4 32.4 34.2 35.1 37.1 38.7 40.9 42.3 44.7 45.9 Max 7.48 7.14 8.25 7.88 9.02 8.61 10.00 9.55 11.00 10.5 12.1 11.6 13.2 12.6 14.3 13.7 16.5 15.8 17.6 16.8 19.8 18.9 22.0 21.0 24.2 23.1 26.4 25.2 29.7 28.4 33.0 31.5 36.3 34.7 39.6 37.8 42.9 41.0 47.3 45.2 51.7 49.4 56.1 Test current IT (mA) Working stand-off voltage VWM (V) Maximum blocking leakage current IR@VWM (µA) 10 10 10 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 5.50 5.80 6.05 6.40 6.63 7.02 7.37 7.78 8.10 8.55 8.92 9.40 9.72 10.2 10.5 11.1 12.1 12.8 12.9 13.6 14.5 15.3 16.2 17.1 17.8 18.8 19.4 20.5 21.8 23.1 24.3 25.6 26.8 28.2 29.1 30.8 31.6 33.3 34.8 36.8 38.1 40.2 41.3 1000 1000 500 500 200 200 50 50 10 10 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 2 Maximum peak Maximum Maximum impulse clamping Temperature current voltage Coefficient of VBR (Note 2) VC@IPPM IPPM (V) (%/°C) (A) 145 150 134 139 126 130 114 117 105 108 97 100 91 94 82 86 71 74 67 70 59 60 54 56 49 51 45 47 40 42 36 38 33 34 30 31 27 29 25 26 23 24 21 10.8 10.5 11.7 11.3 12.5 12.1 13.8 13.4 15.0 14.5 16.2 15.6 17.3 16.7 19.0 18.2 22.0 21.2 23.5 22.5 26.5 25.5 29.1 27.7 31.9 30.6 34.7 33.2 39.1 37.5 43.5 41.4 47.7 45.7 52.0 49.9 56.4 53.9 61.9 59.3 67.8 64.8 73.5 0.057 0.057 0.061 0.061 0.065 0.065 0.068 0.068 0.073 0.073 0.075 0.075 0.078 0.078 0.081 0.081 0.084 0.084 0.086 0.086 0.088 0.088 0.090 0.090 0.092 0.092 0.094 0.094 0.096 0.096 0.097 0.097 0.098 0.098 0.099 0.099 0.100 0.100 0.101 0.101 0.101 0.101 0.102 Version: B2207 1.5SMC6.8(A)H –1.5SMC200(A)H Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) Part number Marking code 1.5SMC51AH 1.5SMC56H 1.5SMC56AH 1.5SMC62H 1.5SMC62AH 1.5SMC68H 1.5SMC68AH 1.5SMC75H 1.5SMC75AH 1.5SMC82H 1.5SMC82AH 1.5SMC91H 1.5SMC91AH 1.5SMC100H 1.5SMC100AH 1.5SMC110H 1.5SMC110AH 1.5SMC120H 1.5SMC120AH 1.5SMC130H 1.5SMC130AH 1.5SMC150H 1.5SMC150AH 1.5SMC160H 1.5SMC160AH 1.5SMC170H 1.5SMC170AH 1.5SMC180H 1.5SMC180AH 1.5SMC200H 1.5SMC200AH FGJ FHJ FKJ FLJ FMJ FNJ FPJ FQJ FRJ FSJ FTJ FUJ FVJ FWJ FXJ FYJ FZJ GDJ GEJ GFJ GGJ GHJ GKJ GLJ GMJ GNJ GPJ GQJ GRJ GSJ GTJ Breakdown voltage (Note 1) VBR@IT (V) Min 48.5 50.4 53.2 55.8 58.9 61.2 64.6 67.5 71.3 73.8 77.9 81.9 86.5 90 95 99 105 108 114 117 124 135 143 144 152 153 162 162 171 180 190 Max 53.6 61.6 58.8 68.2 65.1 74.8 71.4 82.5 78.8 90.2 86.1 100 95.5 110 105 121 116 132 126 143 137 165 158 176 168 187 179 198 189 220 210 Test current IT (mA) Working stand-off voltage VWM (V) Maximum blocking leakage current IR@VWM (µA) 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 43.6 45.4 47.8 50.2 53.0 55.1 58.1 60.7 64.1 66.4 70.1 73.7 77.8 81.0 85.5 89.2 94.0 97.2 102.0 105.0 111.0 121.0 128.0 130.0 136.0 138.0 145.0 146.0 154.0 162.0 171.0 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 Maximum peak Maximum Maximum impulse clamping Temperature current voltage Coefficient of VBR (Note 2) VC@IPPM IPPM (V) (%/°C) (A) 22 70.1 0.102 19 80.5 0.103 20 77.0 0.103 17 89.0 0.104 18 85.0 0.104 16 98.0 0.104 17 92.0 0.104 14 108 0.105 15 103 0.105 13 118 0.105 13.9 113 0.105 12 131 0.106 12.6 125 0.106 10.9 144 0.106 11.4 137 0.106 9.9 158 0.107 10.3 152 0.107 9.1 173 0.107 9.5 165 0.107 8.4 187 0.107 8.7 179 0.107 7.3 215 0.108 7.6 207 0.108 6.8 230 0.108 7.1 219 0.108 6.4 244 0.108 6.7 234 0.108 6.1 258 0.108 6.4 246 0.108 5.4 287 0.108 5.7 274 0.108 Notes: 1. VBR measure after IT applied for 30ms, IT=square wave pulse or equivalent 2. Surge current waveform per Fig.5 and derate per Fig.2 3. For bipolar types having VWM of 10V and under, the IR limit is doubled 4. For bidirectional use CH or CAH suffix for types 1.5SMC6.8H - 1.5SMC200AH 5. All terms and symbols are consistent with ANSI/IEEE C62.35 ORDERING INFORMATION ORDERING CODE(1) PACKAGE PACKING 1.5SMCxH DO-214AB (SMC) 3,000 / Tape & Reel Notes: 1. “x” defines voltage from 6.8V(1.5SMC6.8H) to 200V(1.5SMC200H) 3 Version: B2207 1.5SMC6.8(A)H –1.5SMC200(A)H Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Peak Pulse Power Rating Curve Fig.2 Pulse Derating Curve PEAK PULSE POWER (PPP) OR CURRENT (IPP) DERATING IN PERCENTAGE (%) PPPM, PEAK PULSE POWER (kW) 100 NON-REPETITIVE PULSE WAVEFORM SHOWN in FIG.5 10 1 0.1 0.1 1 10 100 1000 125 100 75 50 25 0 0 10000 Fig.3 Typical Junction Capacitance IFSM, PEAK FORWARD SURGE CURRENT (A) CJ, JUNCTION CAPACITANCE (pF) UNIDIRECTIONAL BIDRECTIONA VR=0 100 10 1 VR-RATED STAND-OFF VOLTAGE 10 75 100 125 150 Fig.4 Maximum Non-repetitive Forward Surge Current 10000 f=1.0MHz Vsig=50mVp-p 50 TA, AMBIENT TEMPERATURE (°C) tp, PULSE WIDTH (μs) 1000 25 100 200 180 8.3ms single half sine wave for Unidirectional only 160 140 120 100 80 60 40 20 0 1 10 100 NUMBER OF CYCLES AT 60 Hz V(BR), BREAKDOWN VOLTAGE (V) 4 Version: B2207 1.5SMC6.8(A)H –1.5SMC200(A)H Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.5 Clamping Power Pulse Waveform 120 IPPM, PEAK PULSE CURRENT (%) 110 Peak value IPPM 100 Pulse width(td) is defined as the point where the peak current decays to 50% of IPPM 90 Rise time tr=10μs to 100% of IPPM 80 70 Half value-IPPM/2 10/1000μs, waveform as defined by R.E.A. 60 50 40 30 20 td 10 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 t, TIME (ms) 5 Version: B2207 1.5SMC6.8(A)H –1.5SMC200(A)H Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS DO-214AB (SMC) SUGGESTED PAD LAYOUT MARKING DIAGRAM P/N = Marking Code G = Green Compound YW = Date Code F = Factory Code Cathode band for uni-directional products only 6 Version: B2207 1.5SMC6.8(A)H –1.5SMC200(A)H Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 7 Version: B2207