MMBT4401

MMBT4401 SOT-23 ■ NPN Transistors 3 ■ Features ● Ideal for Medium Power Amplification and Switching 2 ● Complementary PNP Type Available (MMBT4403) 1 ■ Simplified outline(SOT-23) ■ Marking Marking 1.Base 2.Emitter 3.Collector 2X ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Unit Collector-base voltage Parameter VCBO 60 V Collector-emitter voltage VCEO 40 V Emitter-base voltage VEBO 6.0 V Collector current IC 600 mA Total Device Dissipation Alumina Substrate PD 300 mW RθJA 417 ℃/W TJ, Tstg -55 to150 ℃ Thermal Resistance, Junction to Ambient Junction and Storage Temperature ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditions Collector-base breakdown voltage V(BR)CBO IC = 100μA, IE = 0 Collector-emitter breakdown voltage Emitter-base breakdown voltage Min Typ Max Unit 60 V V(BR)CEO IC = 1.0 mA, IB = 0 40 V V(BR)EBO IE =100μA, IC = 0 6.0 V Collector cut-off current ICBO VCB=50 V, IE=0 0.1 μA Emitter cut-off current IEBO VEB=5V, IC=0 0.1 μA hFE IC = 0.1 mA, VCE = 1.0 V IC = 1.0 mA, VCE = 1.0 V IC = 10 mA, VCE = 1.0 V IC = 150 mA, VCE = 1.0 V IC = 500 mA, VCE = 2.0 V DC current gain * Collector-emitter saturation voltage * VCE(sat) Base-emitter saturation voltage * VBE(sat) 20 40 80 100 40 300 IC = 150 mA, IB = 15 mA 0.4 IC = 500 mA, IB = 50 mA 0.75 IC = 150 mA, IB = 15 mA 0.75 IC = 500 mA, IB = 50 mA 0.95 1.2 250 V V Transition frequency fT IC = 20 mA, VCE = 10 V, f = 100 MHz Delay time td VCC = 30 V, VEB = 2.0 V, 15 MHz ns Rise time tr IC = 150 mA, IB1 = 15 mA 20 ns Storage time ts VCC = 30 V, IC = 150 mA, 225 ns Fall time tf IB1 = IB2 = 15 mA 30 ns * Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%. www.yfwdiode.com 1/3 Dongguan YFW Electronics Co, Ltd. MMBT4401 SOT-23 ■ Typical Characterisitics Static Characteristic 250 1mA COLLECTOR CURRENT DC CURRENT GAIN IC 0.8mA 0.7mA 0.6mA 0.5mA 100 0.4mA 0.3mA 50 IC Ta=100℃ 0.9mA 150 —— COMMON EMITTER VCE= 1V hFE (mA) 200 hFE 1000 COMMON EMITTER Ta =25℃ Ta=25℃ 100 0.2mA IB=0.1mA 0 0 1 2 3 COLLECTOR-EMITTER VOLTAGE VBEsat —— 1000 10 4 1 IC VCEsat 1000 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 800 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) IC —— 600 100 (mA) IC β=10 β=10 Ta=25℃ 600 Ta =100 ℃ 400 200 0 0.1 1 10 100 COLLECTOR CURREMT IC 600 —— IC Ta=100 ℃ 100 Ta=25℃ 10 0.5 0.1 600 1 10 COLLECTOR CURREMT (mA) VBE fT 500 (mA) IC Ta=25℃ TRANSITION FREQUENCY 10 Ta =2 5℃ Ta =1 00℃ COLLECTOR CURRENT IC fT 100 —— 600 100 IC COMMON EMITTER VCE=10V (MHz) COMMON EMITTER VCE=1V (mA) 10 COLLECTOR CURRENT VCE (V) 1 0.1 0 200 400 600 800 1000 100 10 1200 10 BASE-EMMITER VOLTAGE VBE (mV) 100 Cob/Cib —— VCB/VEB COLLECTOR POWER DISSIPATION PC (mW) f=1MHz IE=0/IC=0 CAPACITANCE C (pF) Cib 10 Cob www.yfwdiode.com 10 30 —— IC 30 40 (mA) Ta 300 200 100 0 1 PC 400 Ta=25 ℃ 1 0.1 20 COLLECTOR CURRENT 0 25 50 75 100 AMBIENT TEMPERATURE 2/3 T 125 150 ℃ Dongguan YFW Electronics Co, Ltd. MMBT4401 SOT-23 SOT-23 Package Outline D E B A X HE v M A 3 Q A A1 1 2 e1 c bp w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 Summary of Packing Options Package SOT-23 www.yfwdiode.com Packing Description Packing Quantity Industry Standard Tape/Reel,7”reel 3000 EIA-481-1 3/3 Dongguan YFW Electronics Co, Ltd.