MMBT4401

MMBT4401 TRANSI STOR (NPN) MARKING: Equivalent Circuit: SOT-23 1.BASE 2.EMITTER 3.COLLECTOR FEATURES: ※ Complimentary to MMBT4403 ※ Collector Current: Ic=0.6A ※ Switching Transistor MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6 V Collector Current IC 600 mA Collector Power Dissipation PC 300 mW RΘJA 417 ℃/W Junction Temperature Tj 150 ℃ Storage Temperature Tstg -55～+150 ℃ Thermal Resistance From Junction To Ambient www.yongyutai.com PAGE 1 MMBT4401 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 100μA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE= 100μA, IC=0 6 V Collector cut-off current ICBO VCB= 60 V , IE=0 0.1 μA Collector cut-off current ICEO VCB= 40V , IE=0 0.1 μA Emitter cut-off current IEBO VEB= 6V , IC=0 0.1 μA hFE VCE=1V, IC= 150mA 100 hFE VCE=5V, IC= 10mA 80 hFE VCE=5V, IC= 100mA 60 Collector-emitter saturation voltage VCE(sat) IC=150 mA, IB= 15mA 0.4 V Base-emitter saturation voltage VBE(sat) IC=150 mA, IB= 15mA 1 V Transition frequency fT VCE=20V, IC= 100mA f=100MHz Delay time td VCC=3V, VBE=0.5V, IC=10mA, IB=1mA, 15 ns Rise time tr VCC=3V, VBE=0.5V, IC=10mA, IB=1mA, 20 ns Storage time ts VCC=3V, VBE=0.5V, IC=10mA, IB=1mA, 225 ns Fall time tf VCC=3V, VBE=0.5V, IC=10mA, IB=1mA, 60 ns DC current gain 300 250 MHz CLASSIFICATION OF HFE HFE 100-300 Rank L H Range 100-200 200-300 www.yongyutai.com PAGE 2 MMBT4401 TYPICAL ELEC TRICAL AND THERMAL CHARACTERISTICS www.yongyutai.com PAGE 3 MMBT4401 www.yongyutai.com PAGE 4