BZT52C5V1S

BZT52C2V4S-BZT52C75S Zener Diode FEATURES z z z Miniaturized package size for high density applications 5% high precision regulated voltage stability High reliability chip and packaging process APPLICATIONS z Mobile phone z Portable device z High precision computer motherboard SOD-323 ORDERING INFORMATION Type No. BZT52C2V4S-BZT52C75S Marking Package Code See Page2-3 SOD-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Characteristic Symbol Value Unit VF 0.85 V Power Dissipation① Pd 200 mW Thermal resistance,junction to ambient air ① RθjA 556 ℃/W Thermal resistance,junction to ambient air ② RθjA 417 ℃/W Junction temperature Tj 150 ℃ Storage temperature range Tstg -55~150 ℃ Forward Voltage @ IF=10mA Notes: 1. FR-5=1.0x0.75x0.62 in. 2. Alumina=0.4x0.3x0.024 in.,99.5% alumina Rev : 01.06.2018 1/5 www.leiditech.com BZT52C2V4S-BZT52C75S ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Typical ZZ @ ZZ @ ZZ @ Temperature VZ(V) @ IZ=5mA DEVICE IZ = 1 IZ = 5 IZ = mA mA 20mA IR@VR VR Coefficient(mV/℃)@ Marking IZ=5mA MIN NOM MAX    (uA) V Min Max BZT52C2V4S WX 2.28 2.4 2.52 570 95 47.5 40 1 -3.5 0 BZT52C2V7S W1 2.57 2.7 2.84 570 95 47.5 16 1 -3.5 0 BZT52C3V0S W2 2.85 3 3.15 570 90 47.5 8 1 -3.5 0 BZT52C3V3S W3 3.14 3.3 3.47 570 90 38 4 1 -3.5 0 BZT52C3V6S W4 3.42 3.6 3.78 570 85 38 4 1 -3.5 0 BZT52C3V9S W5 3.72 3.9 4.08 570 85 28.5 2.4 1 -3.5 0 BZT52C4V3S W6 4.09 4.3 4.52 570 85 28.5 2.4 1 -3.5 0 BZT52C4V7S W7 4.47 4.7 4.94 475 75 14 2.4 2 -3.5 0.2 BZT52C5V1S W8 4.85 5.1 5.36 455 57 14 1.6 2 -2.7 1.2 BZT52C5V6S W9 5.32 5.6 5.88 380 38 9.5 0.8 2 -2 2.5 BZT52C6V2S WA 5.89 6.2 6.51 150 9.5 5.7 2.4 4 0.4 3.7 BZT52C6V8S WB 6.46 6.8 7.14 76 14.2 5.7 1.6 4 1.2 4.5 BZT52C7V5S WC 7.13 7.5 7.88 76 14.2 5.7 0.8 5 2.5 5.3 BZT52C8V2S WD 7.79 8.2 8.61 76 14.2 5.7 0.56 5 3.2 6.2 BZT52C9V1S WE 8.65 9.1 9.56 95 14.2 7.6 0.16 7 3.8 7.0 BZT52C10S WF 9.50 10 10.50 142.5 19 9.5 0.08 8 4.5 8.0 BZT52C11S WG 10.45 11 11.55 142.5 19 9.5 0.08 8 5.4 9.0 BZT52C12S WH 11.4 12 12.60 150 23.7 9.5 0.08 8 6.0 10.0 BZT52C13S WI 12.35 13 13.65 170 28.5 14.2 0.08 8 7.0 11.0 BZT52C15S WJ 14.25 15 15.75 190 28.5 19 0.04 11 9.2 13.0 BZT52C16S WK 15.2 16 16.80 190 38 19 0.04 11 10.4 14.0 BZT52C18S WL 17.10 18 18.90 213 42.7 19 0.04 13 12.4 16.0 BZT52C20S WM 19.0 20 21.0 213 52.2 19 0.04 14 14.4 18.0 BZT52C22S WN 20.9 22 23.10 237 52.2 23.7 0.04 15 16.4 20.0 BZT52C24S WO 22.8 24 25.2 250 66.5 23.7 0.04 17 18.4 22.0 Rev : 01.06.2018 2/5 www.leiditech.com BZT52C2V4S-BZT52C75S Typical ZZ @ ZZ @ ZZ @ Temperature VZ(V) @ IZ=2mA DEVICE Marking IZ = 0.5 IZ = 2 IZ = mA mA 10mA IR@VR VR Coefficient(mV/℃)@ IZ=2mA MIN NOM MAX    (uA) V Min Max BZT52C27S WP 25.65 27 28.35 295 75 43 0.04 19 21.4 25.3 BZT52C30S WQ 28.50 30 31.50 295 75 48 0.04 21 24.4 29.4 BZT52C33S WR 31.35 33 34.65 320 75 53 0.04 23 27.4 33.4 BZT52C36S WS 34.20 36 37.80 345 85 58 0.04 25 30.4 37.4 BZT52C39S WT 37.05 39 40.95 345 125 68 0.04 27 33.4 41.2 BZT52C43S WU 40.85 43 45.15 370 145 78 0.04 30 37.6 46.6 BZT52C47S WV 44.65 47 49.35 370 165 88 0.04 33 42.0 51.8 BZT52C51S WW 48.45 51 53.55 395 175 98 0.04 36 46.6 57.2 BZT52C56S XW 52.2 56 58.8 420 195 108 0.04 39 52.2 63.8 BZT52C62S 6E 58.9 62 65.1 445 210 118 0.04 43 58.8 71.6 BZT52C68S 6F 64.6 68 71.4 470 235 128 0.04 48 65.6 79.8 BZT52C75S 6H 71.25 75 78.75 495 250 138 0.04 53 73.4 88.6 Rev : 01.06.2018 3/5 www.leiditech.com BZT52C2V4S-BZT52C75S TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Fig.1 Power Dissipation vs Ambient Temperature Fig.3 Characteristic curve of reverse voltage and impedance Rev : 01.06.2018 Fig.2 Typical reverse characteristics Fig.4 Typical capacitance characteristic curve 4/5 www.leiditech.com BZT52C2V4S-BZT52C75S SOD-323 PACKAGE OUTLINE PACKAGE INFORMATION Device Package Shipping BZT52C2V4SBZT52C75S SOD-323 3000/Tape&Reel Shanghai Leiditech Electronic Co.,Ltd Email: sale1@leiditech.com Tel : +86- 021 50828806 Fax : +86- 021 50477059 Rev : 01.06.2018 5/5 www.leiditech.com