SI2301

SI2301 P-Channel 20-V(D-S) MOSFET V(BR)DSS -20 V RDS(on)MAX 90mΩ@-4.5V 115mΩ@-2.5V FEATURE ※ TrenchFET Power MOSFET MARKING ID -3A APPLICATION ※ Load Switch for Portable Devices ※ DC/DC Converter Equivalent Circuit Maximum ratings ( Ta=25℃ unless otherwise noted) Parameter Symbol Value Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±12 ID -3 IDM -15 Continuous Source-Drain Current(Diode Conduction) IS -0.8 Power Dissipation PD 1.25 W RθJA 150 ℃/W TJ 150 ℃ TSTG -55~+150 ℃ Continuous Drain Current Pulsed Diode Curren Thermal Resistance from Junction to Ambient (t≤5s) Operating Junction Storage Temperature 1/3 Unit V A SI2301 MOSFET ELECTRICAL CHARACTERISTICS Static Electrical Characteristics (Ta = 25 ℃ Unless Otherwise Noted) Parameter Symbol Test Condition Min V(BR)DSS VGS = 0V, ID = -250µA -20 VGS(th) VDS =VGS, ID = -250µA -0.4 Gate-source leakage IGSS Zero gate voltage drain current IDSS Typ Max Unit Static Drain-source breakdown voltage Gate-source threshold voltage Drain-source on-state resistancea Forward transconductancea Diode forward voltage V -1. V VDS =0V, VGS = ±12V ±100 nA VDS = -20V, VGS =0V -1 µA VGS = -4.5V, ID = -2.8A 66 90 mΩ VGS = -2.5V, ID = -2A 83 115 mΩ gfs VDS = -4.5V, ID = -3A 4 VSD IS=-1A,VGS=0V -0.8 RDS(on) S -1.3 V Dynamic Input capacitance Ciss Output capacitance Coss Reverse transfer capacitanceb Crss Total gate charge Qgs Gate-drain charge Qgd 589 pF 92 pF 68 pF 5.5 Qg Gate-source charge Gate resistance VDS = -16V,VGS =0V, f=1MHz VDS = -16V,VGS = -4.5V, ID =-3A Rg f=1MHz 10 nC 0.8 nC 1.3 nC 6 Ω Switchingb Turn-on delay time Rise time Turn-off delay time Fall time td(on) tr td(off) VDD= -10V RL=6Ω, ID ≈ -3A, VGEN= -4.5V,Rg=6Ω tf 10 20 ns 35 60 ns 30 50 ns 10 20 ns -1.3 A -20 A Drain-source body diode characteristics Continuous Source-Drain Diode Current Pulsed Diode forward Curren IS Tc=25 ℃ ISM Note : 1. Repetitive Rating : Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t < 5 sec. 3. Pulse Test : Pulse Width≤300µs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. 2/3 SI2301 3/3