SI2302

SI2302 N-Channel 20-V(D-S) MOSFET V(BR)DSS RDS(on)MAX ID SOT-23 0.050Ω@ 4.5V 20V 0.065Ω@ 2.5V 3A 3 1.GATE 2.SOURCE 1 General FEATURE 3.DRAIN 2 ●TrenchFET Power MOSFET ●Lead free product is acquired MARKING ●Surface mount package Equivalent Circuit A2Shb APPLICATION ●Load Switch for Portable Devices ●DC/DC Converter Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±10 Continuous Drain Current Pulsed Drain Current*1 ID 3.0 IDM 10 Continuous Source-Drain Diode Current IS 1.0 Maximum Power Dissipation PD 1.0 W R θJA 156 ℃/W Junction Temperature TJ 150 Storage Temperature Tstg -55 ~+150 Thermal Resistance from Junction to Ambient(t ≤5s) V A ℃ Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2% www.yongyutai.com PAGE 1 SI2302 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max 0.8 1.0 Units Static Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =-250µA 20 Gate-source threshold voltage VGS(th) VDS =VGS, ID =-250µA 0.5 Gate-source leakage IGSS VDS =0V, VGS =±10V ±100 nA Zero gate voltage drain current IDSS VDS =16V, VGS =0V 1 µA Drain-source on-state resistance a RDS(on) Forward transconductance a gfs VGS =4.5V, ID =3A 0.045 0.050 VGS =2.5V, ID =2A 0.055 0.065 8.0 - VDS =5V, ID =3A V Ω S Dynamicb 300 Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss 80 Total gate charge Qg 4.0 Gate-source charge Qgs Gate-drain charge Qgd Turn-on delay time td(on) Rise time Turn-off delay time Fall time tr td(off) VDS =10V,VGS =0V,f =1MHz VDS =10V,VGS =4.5V,ID =3A 120 pF nC 0.65 1.6 VDD=10V,ID =3A VGEN=4.5V,Rg=6Ω tf 15.0 85.0 ns 45.0 20.0 Drain-source body diode characteristics Continuous source-drain diode current Body diode voltage IS TC=25℃ VSD IS=1.0A 1.0 0.7 1.3 A V Notes : a.Pulse Test : Pulse Width < 300µs, Duty Cycle ≤2%. b.Guaranteed by design, not subject to production testing. www.yongyutai.com PAGE 2 SI2302 Typical Electrical and Thermal Characteristics Vdd Vgs Rgen td(on) Rl Vin D ton tr Vout 90% VOUT G toff tf td(off) 90% INVERTED 10% 10% 90% S VIN 50% 50% 10% PULSE WIDTH Figure 2:Switching Waveforms PD Power(W) ID- Drain Current (A） Figure 1:Switching Test Circuit TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) Figure 4 Drain Current ID- Drain Current (A) Rdson On-Resistance(mΩ) Figure 3 Power Dissipation 115 95 75 55 35 Vds Drain-Source Voltage (V) Figure 5 Output Characteristics www.yongyutai.com ID- Drain Current (A) Figure 6 Drain-Source On-Resistance PAGE 3 ID- Drain Current (A) Normalized On-Resistance SI2302 TJ-Junction Temperature(℃) Vgs Gate-Source Voltage (V) Figure 8 Drain-Source On-Resistance 110 100 90 C Capacitance (pF) Rdson On-Resistance(mΩ) Figure 7 Transfer Characteristics 80 70 60 50 40 30 Vgs Gate-Source Voltage (V) Vds Drain-Source Voltage (V) Figure 10 Capacitance vs Vds Vgs Gate-Source Voltage (V) Is- Reverse Drain Current (A) Figure 9 Rdson vs Vgs . Qg Gate Charge (nC) Figure 11 Gate Charge www.yongyutai.com Vsd Source-Drain Voltage (V) Figure 12 Source- Drain Diode Forward PAGE 4 ID- Drain Current (A) SI2302 Vds Drain-Source Voltage (V) r(t),Normalized Effective Transient Thermal Impedance Figure 13 Safe Operation Area Square Wave Pluse Duration(sec) Figure 14 Normalized Maximum Transient Thermal Impedance www.yongyutai.com PAGE 5 SI2302 SOT-23 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8° SOT-23 Suggested Pad Layout www.yongyutai.com PAGE 6