DS32W

山东晶导微电子有限公司 DS32W THRU DS320W Jingdao Microelectronics Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200 V Forward Current - 3.0A PINNING PIN FEATURES • Metal silicon junction, majority carrier conduction • For surface mounted applications • Low power loss, high efficiency • High forward surge current capability • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications DESCRIPTION 1 Cathode 2 Anode 1 2 Top View Marking Code: DS32W ---K32 DS34W ---K34 DS36W ---K36 DS38W ---K38 DS310W ---K310 DS312W ---K312 DS315W ---K315 DS320W ---K320 Simplified outline SOD-123FL and symbol MECHANICAL DATA • Case: SOD-123FL • Terminals: Solderable per MIL-STD-750, Method 2026 • Approx. Weight:15mg 0.00048oz Absolute Maximum Ratings and Electrical characteristics Ratings at 25 °C ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load, for capacitive load, derate by 20 % Symbols Parameter DS32W DS34W DS36W DS38W DS310W DS312W DS315W DS320W Units Maximum Repetitive Peak Reverse Voltage V RRM 20 40 60 80 100 120 150 200 V Maximum RMS voltage V RMS 14 28 42 56 70 84 105 140 V Maximum DC Blocking Voltage V DC 20 40 60 80 100 120 150 200 V Maximum Average Forward Rectified Current I F(AV) Peak Forward Surge Current,8.3ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method) I FSM Max Instantaneous Forward Voltage at 3 A Maximum DC Reverse Current T a = 25°C at Rated DC Reverse Voltage T a =100°C Typical Junction Capacitance 1） Typical Thermal Resistance 2） Operating Junction Temperature Range Storage Temperature Range A 3.0 80 70 A VF 0.55 IR 0.5 10 0.3 5 mA Cj 250 160 pF 0.70 0.85 0.95 V RθJA 65 °C/W Tj -55 ~ +125 °C T stg -55 ~ +150 °C 1） Measured 2） at 1MHz and applied reverse voltage of 4 V D.C. P.C.B. mounted with 0.2 X 0.2" (5 X 5 mm) copper pad areas. 2015.03 SOD123FL-S-DS320W-3A200V Page 1 of 3 山东晶导微电子有限公司 DS32W THRU DS320W Jingdao Microelectronics Fig.2 Typical Reverse Characteristics Average Forward Current (A) 3.5 100LFM 3.0 2.5 2.0 1.5 1.0 0.5 Single phase half-wave 60 Hz resistive or inductive load 0.0 25 50 75 100 125 150 Instaneous Reverse Current ( μA) Fig.1 Forward Current Derating Curve 10 4 DS32W/DS34W DS36W-DS320W 10 1 T J =25°C 10 0 0 60 80 100 Fig.4 Typical Junction Capacitance 500 T J =25°C 10 1.0 DS32W/DS34W DS36W/DS38W DS310W/DS312W DS315W/DS320W 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 100 50 DS32W/DS34W 20 DS36W-DS320W 10 10 1 0.1 100 Instaneous Forward Voltage (V) Reverse Voltage (V) Fig.5 Maximum Non-Repetitive Peak Forward Surage Current Fig.6- Typical Transient Thermal Impedance DS32W~DS38W DS310W~DS312W 80 60 40 8.3 ms Single Half Sine Wave (JEDEC Method) 00 1 200 1.8 100 20 Junction Capacitance ( pF) 20 10 100 Transient Thermal Impedance（ °C /W） Instaneous Forward Current (A) 40 20 Percent of Rated Peak Reverse Voltage（%） Fig.3 Typical Forward Characteristic Peak Forward Surage Current (A) T J =75°C 10 2 Ambient Temperature (°C) 200 100 10 Number of Cycles at 60Hz 2015.03 T J =100°C 10 3 1 0.01 0.1 1 10 100 t, Pulse Duration（sec） www.sdjingdao.com Page 2 of 3 山东晶导微电子有限公司 DS32W THRU DS320W Jingdao Microelectronics PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-123FL ∠ALL ROUND C A ∠ALL ROUND VM D E A g Top View mil Bottom View A C D E e g HE max 1.1 0.20 2.9 1.9 1.1 0.9 3.8 min 0.9 0.12 2.6 1.7 0.8 0.7 3.5 max 43 7.9 114 75 43 35 150 min 35 4.7 102 67 31 28 138 UNIT mm 1.2 (47) 1.2 (47) 2.0 (79) Marking Unit： mm (mil) 2015.03 ∠ 7° The recommended mounting pad size 1.2 (47) g pad e E A pad HE www.sdjingdao.com Type number Marking code DS32W K32 DS34W K34 DS36W K36 DS38W K38 DS310W K310 DS312W K312 DS315W K315 DS320W K320 Page 3 of 3