TPESD0514PA

TPESD0514PA Low Capacitance TVS Diode Array www.sot23.com.tw Features Mechanical Characteristics 120 Watts Peak Pulse Power per Line (tp=8/20μs) u Package: DFN1616-6 u Protects two or four I/O lines u Ultra low leakage: nA level u Low capacitance: 0.35 pF typical (I/O to I/O) u Case Material: “Green” Molding Compound. u Low operating voltage: 5V u UL Flammability Classification Rating 94V-0 u RoHS Compliant u Moisture Sensitivity: Level 3 per J-STD-020 u IEC61000-4-2 (ESD) ±25kV (air), ±20kV (contact) u IEC61000-4-4 (EFT) 40A (5/50ηs) u IEC61000-4-5 (Lightning) 4A (8/20μs) IC u Applications u High Definition Multimedia Interface (HDMI) Digital Visual Interface (DVI) BL u Unified Display Interface (UDI) u MDDI Ports u PCI Express PU u Ordering Information Part Number Qty per Reel 3000 Reel Size 7” TE TPESD0514PA Serial ATA CH u Dimensions and Pin Configuration 5 VCC 1 3 4 6 I/O 1 I/O 2 I/O 3 I/O 4 GND 1 I/O 4 VCC I/O 3 6 5 4 1 2 3 I/O 1 NC I/O 2 TPESD0514PA Low Capacitance TVS Diode Array www.sot23.com.tw Absolute Maximum Ratings (Tamb=25°C unless otherwise specified) Parameter Symbol Value Unit Peak Pulse Power (8/20µs) Ppk 120 W Peak Pulse Current (8/20µs) IPP 4 A ESD per IEC 61000−4−2 (Air) ±25 VESD ESD per IEC 61000−4−2 (Contact) TJ −55 to +125 IC Operating Temperature Range ±20 Storage Temperature Range Tstg −55 to +150 kV °C °C Symbol Reverse Working Voltage Breakdown Voltage Unit 5 V Any I/O pin to ground 9 V IT = 1mA, any I/O pin to ground 0.2 µA VRWM = 5V, any I/O pin to ground VC 9 V IPP = 1A (8 x 20µs pulse), any I/O pin to ground VC 25 V IPP = 4A (8 x 20µs pulse), any I/O pin to ground pF VR = 0V, f = 1MHz, between I/O pins pF VR = 0V, f = 1MHz, any I/O pin to ground VRWM VBR IR Min Typ 6 CH Reverse Leakage Current TE Clamping Voltage Clamping Voltage Max PU Parameter BL Electrical Characteristics (TA=25°C unless otherwise specified) Junction Capacitance CJ 0.35 Junction Capacitance CJ 0.6 2 0.8 Test Condition TPESD0514PA Low Capacitance TVS Diode Array www.sot23.com.tw Characteristic Curves 8/20μs Pulse Waveform Fig2. ESD Pulse Waveform (according to IEC 61000-4-2) 100 Peak Value IPP 80 100% TEST WAVEFORM PARAMETERS tr=8μs td=20μs Percent of Peak Pulse Current % tr 60 40 td=t IPP/2 20 0 0 5 10 15 20 25 CH 0.1 TE Peak Pulse Power - PPK (kW) 1 0.01 0.1 1 10 100 tr = 0.7~1ns Time (ns) 60ns Fig4. Normalized Capacitance vs. Reverse Voltage PU Non - Repetitive Peak Pulse Power vs. Pulse Time 10 10% 30ns 30 t - Time (μs) Fig3. 90% BL IPP - Peak Pulse Current - % of IPP 120 IC Fig1. 1000 Pulse Duration - tp (μs) 3 TPESD0514PA Low Capacitance TVS Diode Array www.sot23.com.tw Outline Drawing - DFN1616-6 DFN1616-6 A DIM A B C D E F G H J K K H J G E CH PU F BL C D NOTE IC B DIMENSIONS INCHES MM MIN MAX MIN MAX 0.061 0.065 1.55 1.65 0.061 0.065 1.55 1.65 0.035 0.041 0.90 1.05 0.020 0.026 0.50 0.65 0.008 0.012 0.20 0.30 0.020 REF. 0.50 REF. 0.20 0.30 0.008 0.026 0.50 0.60 0.020 0.024 0.000 0.002 0.00 0.05 0.15 REF. 0.006 REF. Suggested Solder Pad Layout 0.50 (mm) TE 0.30 0.45 1.52 2.15 0.89 0.63 1.30 4 WWW.TECHPUBLIC.COM.TW