SM4435PRL

SM4435 P-Channel Enhancement-Mode MOSFET (-30V, -9.1A) PRODUCT SUMMARY VDSS ID -30V -9.1A RDS(on) (m-ohm) Max 20 @ VGS = -10V ,ID=-9.1A 35 @ VGS = -4.5V,ID=-6.9A ◆ Features 1、Advanced Trench Process Technology. 2、High Density Cell Design for Ultra Low On-Resistance. 3、Lead free product is acquired. 4、Surface mount Package. 5、RoHS Compliant. Pin 1 / 2 / 3: Source Pin 4: Gate Pin 5 / 6 / 7 / 8: Drain ◆ Ordering Information Ordering Number Pin Assignment Package Lead Free Halogen Free SM4435PRL SM4435PRG SOP-8 SM4435X X X (1)Package Type (2)Packing Type Packing 4 1/2/3 5/6/7/8 G S D (1) P：SOP-8 (2) R：Tape Reel (3) G：Halogen Free；L：Lead Free (3)Lead Free V01 Tape Reel 1 www.sourcechips.com SM4435 ◆ Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Symbol VDS VGS ID IDM PD IS Tj, Tstg RqJA Parameter Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous) a Drain Current (Pulsed) o Total Power Dissipation @TA=25 C Ratings -30 ±20 -9.1 -36 2.5 -2.1 -55 to +150 Maximum Diode Forward Current Operating Junction and Storage Temperature Range Thermal Resistance Junction to Ambient (PCB mounted) b Units V V A A W A °C 50 °C/W a: Repetitive Rating: Pulse width limited by the maximum junction temperation. b: 1-in2 2oz Cu PCB board. ◆ Electrical Characteristics (TA=25°C, unless otherwise noted) Symbol Characteristi Test Conditions Min. Typ. Max. Unit • Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -30 - - V IDSS Zero Gate Voltage Drain Current VDS=-30V, VGS=0V - - -1 uA IGSS Gate-Body Leakage Current VGS=±20V, VDS=0V - - ±100 nA VDS=VGS, ID=-250uA -1 -1.4 -3 V VGS=-10V, ID=-9.1A - 15 20 VGS=-4.5V, ID=-6.9A - 20 35 VDS=-10V, ID=-9.1A - 21 - - 2253 - - 555 - - 253 - - 35 45.5 - 5.5 7.15 - 8.2 10.66 - 10 20 - 15 30 - 110 220 - 70 140 - - -1.2 c • On Characteristics VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-State Resistance gFS Forward Transconductance • Dynamic Characteristics Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance • Switching Characteristics Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) Turn-off Delay Time tf S d Ciss Qg mΩ VDS=-15V, VGS=0V, f=1MHz pF d VDS=-15V, ID=-9.1A, VGS=-10V ， ， VDD=-15V RL=15Ω ID=-1A, VGEN=-10V, RG=6Ω Turn-off Fall Time nC nS • Drain-Source Diode Characteristics VSD Drain-Source Diode Forward Voltage VGS=0V, IS=-2.1A Note: Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. V01 2 www.sourcechips.com V SM4435 ◆ Characteristics Curve V01 3 www.sourcechips.com SM4435 ◆ Characteristics Curve V01 4 www.sourcechips.com