SMF15CT1G

www.msksemi.com SMF15CT1G Semiconductor Compiance Applications  Cellular handsets and accessories  Portable electronics  Computers and peripherals  Communications systems  Audio and video equipment. SOT-363 Features  Uni-directional ESD protection of up to five lines  Bi-directional ESD protection of up to four lines  Low diode capacitance  Low clamping voltage  low leakage current  IEC 61000-4-2; level 4 (ESD)  IEC61000-4-5 (surge)  S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Electrical Characteristics VBR P/N SMF15CT1G IPP VRM IR Min. Max. v v v μA 17 19 15 1 8/20 s pulse; notes1and2 A 5 C f=1MHz; VR = 0 V; seeFig.4 VCL (Max) @ IPP =1A @ IPP =5A v v pF 23 29 15 Value Units Notes 1. Non-repetitive current pulse 8/20 s exponentially decaying waveform; see Fig.1. 2. Measured from any of pins 1, 3, 4, 5 or 6 to pin 2. Absolute Ratings (Tamb=25°C ) Symbol Parameter PPP Peak Pulse Power (tp = 8/20μs) 150 W TL Maximum lead temperature for soldering during 10s 260 °C Tstg Storage Temperature Range -60 to +150 °C Top Operating Temperature Range -60 to +150 °C Tj Maximum junction temperature 150 °C 8 kV 15 kV Electrostatic discharge VPP IEC61000-4-2 (contact discharge) IEC61000-4-2 (air discharge) www.msksemi.com SMF15CT1G Semiconductor Compiance Electrical Parameter Symbol Parameter VRM Stand-off voltage VBR Breakdown voltage VCL Clamping voltage IR Leakage current IPP Peak pulse current C Capacitance Ipp 120 Ipp (%) 100 % 100 % Ipp; 8 s 80 90 % et 50 % Ipp; 20 s 40 10 % 0 Fig.1 0 10 20 30 t (s) 8/20 s pulse waveform according to IEC 61000-4-5. t tr  0.7 to 1 ns 40 30 ns 60 ns Fig.2 Electrostatic Discharge (ESD) pulse waveform according to IEC61000-4-2. www.msksemi.com SMF15CT1G Semiconductor Compiance GRAPHICAL DATA 102 Ppp(Tj) Ppp(Tj=25C) 1.0 Ppp (W) 0.8 0.6 10 0.4 0.2 1 1 102 10 103 tp (s) 0 104 0 50 100 Tj (C) 150 Tamb = 25 C. Ipp = 8/20 s exponentially decaying waveform; see Fig.1. Fig.3 Peak pulse power dissipation as a function of pulse time; typical values. Fig.4 25 Relative variation of peak pulse power as a function of junction temperature; typical values. 10 Cd (pF) IR(Tj) 20 IR(Tj=25C) 15 1 10 5 0 0 1 2 3 4 VR (V) 5 101 75 25 25 75 125  175 Tj ( C) f = 1 MHz; Tamb = 25 C. Fig.5 Diode capacitance as af unction of reverse voltage; typical values. Fig.6 Relative variation of reverse leakage current as a function of junction temperature; typical values. www.msksemi.com SMF15CT1G Semiconductor Compiance PACKAGE DIMENSIONS SOT-363 NOTES: 1. DIMENSIONINGANDTOLERANCINGPERANSI Y14.5M, 1982. 2.CONTROLLINGDIMENSION:INCH. INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.071 0.087 1.80 2.20 B C D G H J K N S V 0.045 0.053 0.031 0.043 0.004 0.012 0.026BSC ––– 0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 0.012 0.016 1.15 1.35 0.80 1.10 0.10 0.30 0.65BSC ––– 0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 0.30 0.40 REEL SPECIFICATION P/N SMF15CT1G PKG SOT-363 QTY 3000 www.msksemi.com SMF15CT1G Semiconductor Compiance Attention ■ Any and all MSKSEMI Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. 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