MJD44H11AJ

MJD44H11A 80 V, 8 A NPN high power bipolar transistor 12 September 2019 Product data sheet 1. General description NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD45H11A 2. Features and benefits • • • • • • High thermal power dissipation capability High energy efficiency due to less heat generation Electrically similar to popular MJD44H series Low collector emitter saturation voltage Fast switching speeds AEC-Q101 qualified 3. Applications • • • • • • Power management Load switch Linear mode voltage regulator Constant current drive backlighting application Motor drive Relay replacement 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit - - 80 V VCEO collector-emitter voltage IC collector current - - 8 A ICM peak collector current single pulse; tp ≤ 1 ms - - 16 A hFE DC current gain VCE = 1 V; IC = 2 A; Tamb = 25 °C 60 - - MJD44H11A Nexperia 80 V, 8 A NPN high power bipolar transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 B base 2 C collector 3 E emitter mb C mounting base; connected to collector Graphic symbol mb E B C; mb aaa-029889 2 1 3 DPAK (SOT428C) 6. Ordering information Table 3. Ordering information Type number Package MJD44H11A Name Description Version DPAK Plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) SOT428C 7. Marking Table 4. Marking codes Type number Marking code MJD44H11A MJD44H11A 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC601134). Symbol Parameter Conditions VCEO collector-emitter voltage VEBO emitter-base voltage IC collector current ICM peak collector current single pulse; tp ≤ 1 ms Ptot total power dissipation Tmb ≤ 25 °C Tamb ≤ 25 °C Min Max Unit - 80 V - 6 V - 8 A - 16 A [1] - 20 W [2] - 1.75 W open collector Tj junction temperature - 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C [1] [2] Total power dissipation junction to mounting base. 2 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated mounting pad for collector 1 cm . MJD44H11A Product data sheet All information provided in this document is subject to legal disclaimers. 12 September 2019 © Nexperia B.V. 2019. All rights reserved 2 / 12 MJD44H11A Nexperia 80 V, 8 A NPN high power bipolar transistor aaa-029825 2.0 Ptot (W) 1.5 1.0 0.5 0 -50 0 50 100 150 200 Tamb (°C) 2 FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm . Fig. 1. Power derating curves SOT428C 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-mb) thermal resistance from in free air junction to mounting base Rth(j-a) thermal resistance from junction to ambient [1] [1] Min Typ Max Unit - - 6.25 K/W - - 72 K/W 2 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated mounting pad for collector 1 cm . 102 Zth(j-a) (K/W) aaa-029826 duty cycle = 1 0.50 0.25 10 0.75 0.33 0.20 0.10 0.05 0.02 1 0.01 0 10-1 10-5 10-4 10-3 10-2 10-1 1 10 102 2 tp (s) 103 FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm . Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values MJD44H11A Product data sheet All information provided in this document is subject to legal disclaimers. 12 September 2019 © Nexperia B.V. 2019. All rights reserved 3 / 12 MJD44H11A Nexperia 80 V, 8 A NPN high power bipolar transistor 10. Characteristics Table 7. Characteristics Symbol Parameter Min Typ Max Unit collector-emitter cut-off VCE = 64 V; VBE = 0 V; Tamb = 25 °C current VCE = 64 V; VBE = 0 V; Tj = 150 °C - - 1 µA - - 50 µA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 A; Tamb = 25 °C - - 1 µA hFE DC current gain VCE = 1 V; IC = 2 A; Tamb = 25 °C 60 - - VCE = 1 V; IC = 4 A; Tamb = 25 °C 40 - - ICES Conditions VCEsat collector-emitter saturation voltage IC = 8 A; IB = 400 mA; Tamb = 25 °C - - 1 V VBEsat base-emitter saturation IC = 8 A; IB = 800 mA; Tamb = 25 °C voltage - - 1.5 V ton turn-on time - 300 - ns ts storage time - 250 - ns tf fall time - 170 - ns toff turn-off time - 420 - ns Cc collector capacitance VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C - 30 - pF fT transition frequency VCE = 10 V; IC = 500 mA; f = 100 MHz; Tamb = 25 °C - 160 - MHz IC = 5 A; IBon = 0.5 mA; IBoff = -0.5 mA; VCC = 12.5 V; Tamb = 25 °C aaa-029827 400 (1) hFE aaa-029828 8 IB (mA) = 140 IC (A) 300 120 100 80 6 60 (2) 50 40 200 4 30 (3) 20 100 0 10 102 103 IC (mA) 0 104 VCE = 1 V (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig. 3. 10 2 0 1 2 3 4 VCE (V) 5 Tamb = 25 °C Fig. 4. Collector current as a function of collectoremitter voltage; typical values DC current gain as a function of collector current; typical values MJD44H11A Product data sheet All information provided in this document is subject to legal disclaimers. 12 September 2019 © Nexperia B.V. 2019. All rights reserved 4 / 12 MJD44H11A Nexperia 80 V, 8 A NPN high power bipolar transistor aaa-029829 1.2 aaa-029830 1.6 VBEsat (V) VBE (V) 1.2 (1) 0.8 (2) (1) 0.8 (2) (3) 0.4 (3) 0.4 0 1 10 102 103 IC (mA) 0 104 VCE = 5 V (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 150 °C Fig. 5. 1 10 102 103 IC (mA) 104 IC/IB = 10 (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 150 °C Base-emitter voltage as a function of collector current; typical values Fig. 6. aaa-029831 1 aaa-029832 103 VCEsat (V) fT (Mhz) (1) 10-1 Base-emitter saturation voltage as a function of collector current; typical values (2) 102 (3) 10-2 10-3 1 10 102 103 IC (mA) 10 104 IC/IB = 20 (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig. 7. Product data sheet 102 IC (mA) 103 VCE = 2 V Tamb = 25 °C Fig. 8. Collector-emitter saturation voltage as a function of collector current; typical values MJD44H11A 10 Transition frequency as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. 12 September 2019 © Nexperia B.V. 2019. All rights reserved 5 / 12 MJD44H11A Nexperia 80 V, 8 A NPN high power bipolar transistor aaa-029833 2.0 aaa-029834 104 C (pF) VCEsat (V) 103 1.5 (1) 1.0 102 0.5 10 (2) (1) 0 10-1 (2) 1 (3) (4) 10 (5) 102 IB (mA) 1 10-1 103 Collector-emitter saturation region as a function of base current; typical values MJD44H11A Product data sheet 10 V (V) 102 Tamb = 25 °C (1) Ce (2) Cc (1) IC = 100 mA (2) IC = 500 mA (3) IC = 1000 mA (4) IC = 3000 mA (5) IC = 8000 mA Fig. 9. 1 Fig. 10. Input/output capacitance as a function of input/ output voltage All information provided in this document is subject to legal disclaimers. 12 September 2019 © Nexperia B.V. 2019. All rights reserved 6 / 12 MJD44H11A Nexperia 80 V, 8 A NPN high power bipolar transistor 11. Test information IB input pulse (idealized waveform) 90 % IBon (100 %) 10 % IBoff output pulse (idealized waveform) IC 90 % IC (100 %) 10 % t td ts tr ton tf toff 006aaa003 Fig. 11. BISS transistor switching time definition VBB RB (probe) oscilloscope 450 Ω VCC RC Vo (probe) 450 Ω R2 VI oscilloscope DUT R1 mlb826 Fig. 12. Test circuit for switching times Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. MJD44H11A Product data sheet All information provided in this document is subject to legal disclaimers. 12 September 2019 © Nexperia B.V. 2019. All rights reserved 7 / 12 MJD44H11A Nexperia 80 V, 8 A NPN high power bipolar transistor 12. Package outline Plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) SOT428C y E A A A1 b2 E1 see note 1 mounting base D2 D1 HD 2 L2 L 1 b1 (2x) L1 3 b (2x) e w c A e1 0 5 10 mm scale Dimensions (mm are the original dimensions) Unit mm A A1 b b1 b2 c D1 max 2.38 0.93 0.89 1.10 5.46 0.60 6.22 nom min 2.22 0.46 0.71 0.72 5.00 0.20 5.98 D2 E E1 6.73 4.0 6.47 4.45 e e1 2.285 4.57 HD L L1 10.4 2.95 9.6 2.55 L2 1.0 0.5 0.5 w 0.2 y 0.2 Note 1. Plastic body may have 45° chamfer. Outline version SOT428C sot428c_po References IEC JEDEC JEITA TO-252 SC-63 European projection Issue date 19-08-28 Fig. 13. Package outline DPAK (SOT428C) MJD44H11A Product data sheet All information provided in this document is subject to legal disclaimers. 12 September 2019 © Nexperia B.V. 2019. All rights reserved 8 / 12 MJD44H11A Nexperia 80 V, 8 A NPN high power bipolar transistor 13. Soldering Footprint information for reflow soldering of DPAK (SOT428C) package SOT428C 7 6.15 5.9 5.8 1.8 1 4.725 4.6 5.75 5.65 6.5 1.15 3.6 6 2.45 6 6.125 0.3 2.4 2.3 1.3 1.5 1.4 1.65 4.57 occupied area solder resist solder lands solder paste Dimensions in mm Issue date 19-09-06 sot428c_fr Fig. 14. Reflow soldering footprint for DPAK (SOT428C) MJD44H11A Product data sheet All information provided in this document is subject to legal disclaimers. 12 September 2019 © Nexperia B.V. 2019. All rights reserved 9 / 12 MJD44H11A Nexperia 80 V, 8 A NPN high power bipolar transistor 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes MJD44H11A v.3 20190912 Product data sheet - MJD44H11A v.2 Modifications: • MJD44H11A v.2 20190729 Product data sheet - MJD44H11A v.1 MJD44H11A v.1 20190528 Preliminary data sheet - - MJD44H11A Product data sheet Package outline adapted to SOT428C All information provided in this document is subject to legal disclaimers. 12 September 2019 © Nexperia B.V. 2019. All rights reserved 10 / 12 MJD44H11A Nexperia 80 V, 8 A NPN high power bipolar transistor equipment, nor in applications where failure or malfunction of an Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia and its suppliers accept no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. 15. Legal information Data sheet status Document status [1][2] Product status [3] Definition Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the internet at https://www.nexperia.com. Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. 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Nexperia takes no responsibility for the content in this document if provided by an information source outside of Nexperia. In no event shall Nexperia be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Customers are responsible for the design and operation of their applications and products using Nexperia products, and Nexperia accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Nexperia product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). 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Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or MJD44H11A Product data sheet All information provided in this document is subject to legal disclaimers. 12 September 2019 © Nexperia B.V. 2019. All rights reserved 11 / 12 MJD44H11A Nexperia 80 V, 8 A NPN high power bipolar transistor Contents 1. General description...................................................... 1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Marking.......................................................................... 2 8. Limiting values............................................................. 2 9. Thermal characteristics............................................... 3 10. Characteristics............................................................ 4 11. Test information.......................................................... 7 12. Package outline.......................................................... 8 13. Soldering..................................................................... 9 14. Revision history........................................................10 15. Legal information......................................................11 © Nexperia B.V. 2019. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 12 September 2019 MJD44H11A Product data sheet All information provided in this document is subject to legal disclaimers. 12 September 2019 © Nexperia B.V. 2019. All rights reserved 12 / 12