BT152-600R,127

IMPORTANT NOTICE 10 December 2015 1. Global joint venture starts operations as WeEn Semiconductors Dear customer, As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which will be used in future Bipolar Power documents together with new contact details. In this document where the previous NXP references remain, please use the new links as shown below. WWW - For www.nxp.com use www.ween-semi.com Email - For salesaddresses@nxp.com use salesaddresses@ween-semi.com For the copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) “© NXP Semiconductors N.V. {year}. All rights reserved” becomes “© WeEn Semiconductors Co., Ltd. {year}. All rights reserved” If you have any questions related to this document, please contact our nearest sales office via email or phone (details via salesaddresses@ween-semi.com). Thank you for your cooperation and understanding, WeEn Semiconductors DISCRETE SEMICONDUCTORS '$7$ 6+((7 BT152 series Thyristors Product specification March 1997 1;3 Semiconductors Product specification Thyristors GENERAL DESCRIPTION Glass passivated thyristors in a plastic envelope, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching. PINNING - TO220AB PIN DESCRIPTION 1 cathode 2 anode 3 gate tab BT152 series QUICK REFERENCE DATA SYMBOL VDRM, VRRM IT(AV) IT(RMS) ITSM PARAMETER MAX. MAX. MAX. UNIT BT152Repetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current 400R 450 600R 650 800R 800 V 13 20 200 13 20 200 13 20 200 A A A PIN CONFIGURATION SYMBOL tab a k g 1 23 anode LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER VDRM Repetitive peak off-state voltages IT(AV) IT(RMS) ITSM Average on-state current RMS on-state current Non-repetitive peak on-state current I2t dIT/dt IGM VGM VRGM PGM PG(AV) Tstg Tj CONDITIONS half sine wave; Tmb ≤ 103 ˚C all conduction angles half sine wave; Tj = 25 ˚C prior to surge t = 10 ms t = 8.3 ms t = 10 ms ITM = 50 A; IG = 0.2 A; dIG/dt = 0.2 A/μs I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak reverse gate voltage Peak gate power Average gate power over any 20 ms period Storage temperature Operating junction temperature MIN. MAX. UNIT - -400R -600R -800R 4501 6501 800 V - 13 20 A A - 200 220 200 200 A A A2s A/μs -40 - 5 5 5 20 0.5 150 125 A V V W W ˚C ˚C 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/μs. March 1997 1 Rev 1.200 1;3 Semiconductors Product specification Thyristors BT152 series THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Thermal resistance junction to mounting base Thermal resistance in free air junction to ambient Rth j-a CONDITIONS MIN. TYP. MAX. UNIT - - 1.1 K/W - 60 - K/W STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT IGT IL IH VT VGT Gate trigger current Latching current Holding current On-state voltage Gate trigger voltage ID, IR Off-state leakage current VD = 12 V; IT = 0.1 A VD = 12 V; IGT = 0.1 A VD = 12 V; IGT = 0.1 A IT = 40 A VD = 12 V; IT = 0.1 A VD = VDRM(max); IT = 0.1 A; Tj = 125 ˚C VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C 0.25 - 3 25 15 1.4 0.6 0.4 0.2 32 80 60 1.75 1.5 1.0 mA mA mA V V V mA DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT dVD/dt Critical rate of rise of off-state voltage Gate controlled turn-on time Circuit commutated turn-off time VDM = 67% VDRM(max); Tj = 125 ˚C; exponential waveform gate open circuit VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/μs; ITM = 40 A VD = 67% VDRM(max); Tj = 125 ˚C; ITM = 50 A; VR = 25 V; dITM/dt = 30 A/μs; dVD/dt = 50 V/μs; RGK = 100 Ω 200 300 - V/μs - 2 - μs - 70 - μs tgt tq March 1997 2 Rev 1.200 NXP Semiconductors Product specification Thyristors 25 BT152 series Ptot / W BT152 conduction angle degrees 30 60 90 120 180 20 15 Tmb(max) / C ITSM / A 250 97.5 BT152 form factor a a = 1.57 4 2.8 2.2 1.9 1.57 1.9 103 200 108.5 150 114 100 time T Tj initial = 25 C max 2.2 2.8 ITSM IT 4 10 119.5 5 0 0 5 50 125 15 10 0 IT(AV) / A Fig.1. Maximum on-state dissipation, Ptot, versus average on-state current, IT(AV), where a = form factor = IT(RMS)/ IT(AV). 1000 10 100 Number of half cycles at 50Hz 1000 Fig.4. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz. BT152 ITSM / A 1 50 BT152 IT(RMS) / A dI T /dt limit 40 30 100 20 I TSM IT 10 time T Tj initial = 25 C max 10 10us 100us 0 0.01 10ms 1ms 0.1 1 surge duration / s T/s Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Tmb ≤ 103˚C. Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp ≤ 10ms. 25 BT152 IT(RMS) / A 1.6 103 C 20 10 VGT(Tj) VGT(25 C) BT151 1.4 1.2 15 1 10 0.8 5 0 -50 0.6 0 50 Tmb / C 100 0.4 -50 150 Fig.3. Maximum permissible rms current IT(RMS) , versus mounting base temperature Tmb. March 1997 0 50 Tj / C 100 150 Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25˚C), versus junction temperature Tj. 3 Rev 1.200 1;3Semiconductors Product specification Thyristors 3 BT152 series IGT(Tj) IGT(25 C) 50 BT152 BT152 IT / A Tj = 125 C Tj = 25 C 2.5 40 2 30 Vo = 1.12 V Rs = 0.015 ohms max typ 1.5 20 1 10 0.5 0 -50 0 50 Tj / C 100 0 150 Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25˚C), versus junction temperature Tj. 3 IL(Tj) IL(25 C) 0 0.5 1 VT / V 1.5 2 Fig.10. Typical and maximum on-state characteristic. 10 BT145 2.5 BT152 Zth j-mb (K/W) 1 2 0.1 1.5 P D 1 tp 0.01 0.5 t 0 -50 0 50 Tj / C 100 0.001 10us 150 IH(Tj) IH(25 C) 1ms 10ms tp / s 0.1s 1s 10s Fig.11. Transient thermal impedance Zth j-mb, versus pulse width tp. Fig.8. Normalised latching current IL(Tj)/ IL(25˚C), versus junction temperature Tj. 3 0.1ms 10000 BT152 dVD/dt (V/us) 2.5 RGK = 100 Ohms 1000 2 gate open circuit 1.5 100 1 0.5 0 -50 0 50 Tj / C 100 10 150 50 100 150 Tj / C Fig.12. Typical, critical rate of rise of off-state voltage, dVD/dt versus junction temperature Tj. Fig.9. Normalised holding current IH(Tj)/ IH(25˚C), versus junction temperature Tj. March 1997 0 4 Rev 1.200 1;3Semiconductors Product specification Thyristors BT152 series MECHANICAL DATA Dimensions in mm 4,5 max Net Mass: 2 g 10,3 max 1,3 3,7 2,8 5,9 min 15,8 max 3,0 max not tinned 3,0 13,5 min 1,3 max 1 2 3 (2x) 0,9 max (3x) 2,54 2,54 0,6 2,4 Fig.13. TO220AB; pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". March 1997 5 Rev 1.200 NXP Semiconductors Legal information DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. 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