SIT9121AI-2D1-33E200.000000

SiT9121 1 MHz − 220 MHz High Performance Differential Oscillator Features        Applications Any frequency between 1 MHz and 220 MHz accurate to 6 decimal places LVPECL and LVDS output signaling types 0.6ps RMS phase jitter (random) over 12 kHz to 20 MHz bandwidth Frequency stability as low as ±10 ppm Industrial and extended commercial temperature ranges Industry-standard packages: 3.2 x 2.5, 5.0 x 3.2 and 7.0 x 5.0 mm x mm For other frequencies, refer to SiT9120 and SiT9122 datasheets   10 GB Ethernet, SONET, SATA, SAS, Fibre Channel, PCI-Express Telecom, networking, instrumentation, storage, server Electrical Characteristics Table 1. Electrical Characteristics Parameters Symbol Min. Typ. Max. Unit Condition LVPECL and LVDS, Common Electrical Characteristics Supply Voltage Output Frequency Range Frequency Stability 2.97 3.3 3.63 V 2.25 2.5 2.75 V 2.25 – 3.63 V f 1 – 220 MHz F_stab -10 – +10 ppm -20 – +20 ppm -25 – +25 ppm -50 – +50 ppm Vdd Termination schemes in Figures 1 and 2 - XX ordering code Inclusive of initial tolerance, operating temperature, rated power supply voltage, and load variations First Year Aging F_aging1 -2 – +2 ppm 25°C 10-year Aging F_aging10 -5 – +5 ppm 25°C T_use -40 – +85 °C Industrial -20 – +70 °C Extended Commercial Operating Temperature Range Input Voltage High VIH 70% – – Vdd Pin 1, OE or ST Input Voltage Low VIL – – 30% Vdd Pin 1, OE or ST Z_in – 100 250 kΩ Pin 1, OE logic high or logic low, or ST logic high 2 – – MΩ Pin 1, ST logic low Input Pull-up Impedance Start-up Time T_start – 6 10 ms Measured from the time Vdd reaches its rated minimum value. Resume Time T_resume – 6 10 ms In Standby mode, measured from the time ST pin crosses 50% threshold. DC 45 – 55 % Contact SiTime for tighter duty cycle Duty Cycle LVPECL, DC and AC Characteristics Idd – 61 69 mA Excluding Load Termination Current, Vdd = 3.3V or 2.5V OE Disable Supply Current I_OE – – 35 mA OE = Low Output Disable Leakage Current I_leak – – 1 A OE = Low Standby Current I_std – – 100 A ST = Low, for all Vdds I_driver – – 30 mA Maximum average current drawn from OUT+ or OUT- Output High Voltage VOH Vdd-1.1 – Vdd-0.7 V See Figure 1(a) Output Low Voltage VOL Vdd-1.9 – Vdd-1.5 V See Figure 1(a) V_Swing 1.2 1.6 2.0 V See Figure 1(b) Rise/Fall Time Tr, Tf – 300 700 ps 20% to 80%, see Figure 1(a) OE Enable/Disable Time T_oe – – 115 ns f = 212.5 MHz - For other frequencies, T_oe = 100ns + 3 period RMS Period Jitter T_jitt – 1.2 1.7 ps f = 100 MHz, VDD = 3.3V or 2.5V – 1.2 1.7 ps f = 156.25 MHz, VDD = 3.3V or 2.5V – 1.2 1.7 ps f = 212.5 MHz, VDD = 3.3V or 2.5V – 0.6 0.85 ps f = 156.25 MHz, Integration bandwidth = 12 kHz to 20 MHz, all Vdds Current Consumption Maximum Output Current Output Differential Voltage Swing RMS Phase Jitter (random) Rev 1.08 T_phj August 17, 2019 www.sitime.com SiT9121 1 MHz − 220 MHz High Performance Differential Oscillator Table 1. Electrical Characteristics (continued) Parameter Symbol Min. Typ. Max. Unit Condition LVDS, DC and AC Characteristics Idd – 47 55 mA Excluding Load Termination Current, Vdd = 3.3V or 2.5V OE Disable Supply Current I_OE – – 35 mA OE = Low Differential Output Voltage VOD 250 350 450 mV See Figure 2 Output Disable Leakage Current I_leak – – 1 A OE = Low I_std – – 100 A ST = Low, for all Vdds VOD – – 50 mV See Figure 2 Current Consumption Standby Current Delta VOD VOS 1.125 1.2 1.375 V See Figure 2 Delta VOS VOS – – 50 mV See Figure 2 Rise/Fall Time Tr, Tf – 495 700 ps 20% to 80%, see Figure 2 OE Enable/Disable Time T_oe – – 115 ns f = 212.5 MHz - For other frequencies, T_oe = 100ns + 3 period – 1.2 1.7 ps f = 100 MHz, VDD = 3.3V or 2.5V – 1.2 1.7 ps f = 156.25 MHz, VDD = 3.3V or 2.5V – 1.2 1.7 ps f = 212.5 MHz, VDD = 3.3V or 2.5V – 0.6 0.85 ps f = 156.25 MHz, Integration bandwidth = 12 kHz to 20 MHz, all Vdds Offset Voltage RMS Period Jitter T_jitt RMS Phase Jitter (random) T_phj Table 2. Pin Description Pin Map Functionality No Connect; Leave it floating or connect to GND for better heat dissipation H or Open: specified frequency output L: output is high impedance NC NA OE Input ST Input H or Open: specified frequency output L: Device goes to sleep mode. Supply current reduces to I_std. 2 NC NA No Connect; Leave it floating or connect to GND for better heat dissipation 3 GND Power VDD Power Supply Ground 4 OUT+ Output Oscillator output 5 OUT- Output Complementary oscillator output 6 VDD Power Power supply voltage 1 Rev 1.08 Top View NC/OE/ST 1 6 VDD NC 2 5 OUT- GND 3 4 OUT+ Figure 1. Pin Assignments Page 2 of 13 www.sitime.com SiT9121 1 MHz − 220 MHz High Performance Differential Oscillator Table 3. Absolute Maximum Limits Attempted operation outside the absolute maximum ratings of the part may cause permanent damage to the part. Actual performance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings. Min. Max. Unit Storage Temperature Parameter -65 150 °C VDD -0.5 4 V – 2000 V – 260 °C Electrostatic Discharge (HBM) Soldering Temperature (follow standard Pb free soldering guidelines) [1] Table 4. Thermal Consideration JA, 4 Layer Board (°C/W) Package JC, Bottom (°C/W) 7050, 6-pin 142 27 5032, 6-pin 97 20 3225, 6-pin 109 20 Note: 1. Refer to JESD51-7 for JA and JC definitions, and reference layout used to determine the JA and JC values in the above table. Table 5. Maximum Operating Junction Temperature[2] Max Operating Temperature (ambient) Maximum Operating Junction Temperature 70°C 90°C 85°C 105°C Note: 2. Datasheet specifications are not guaranteed if junction temperature exceeds the maximum operating junction temperature. Table 6. Environmental Compliance Parameter Condition/Test Method Mechanical Shock MIL-STD-883F, Method 2002 Mechanical Vibration MIL-STD-883F, Method 2007 Temperature Cycle JESD22, Method A104 Solderability MIL-STD-883F, Method 2003 Moisture Sensitivity Level MSL1 @ 260°C Rev 1.08 Page 3 of 13 www.sitime.com SiT9121 1 MHz − 220 MHz High Performance Differential Oscillator Waveform Diagrams OUT80% 80% 20% 20% VOH OUT+ Tr VOL Tf GND Figure 1(a). LVPECL Voltage Levels per Differential Pin (i.e. OUT+, or OUT-) V_ Swing 0V t Figure 1(b). LVPECL Voltage Levels Across Differential Pair (i.e. OUT+ minus OUT-) OUT80% 80% VOD 20% 20% OUT+ VOS Tr Tf GND Figure 2. LVDS Voltage Levels per Differential Pin (i.e. OUT+, or OUT-) Rev 1.08 Page 4 of 13 www.sitime.com SiT9121 1 MHz − 220 MHz High Performance Differential Oscillator Termination Diagrams LVPECL VDD Z0 = 50  OUT+ D+ Receiver Device LVPECL Driver Z0 = 50  OUT- D50  50  VTT = VDD – 2.0 V Figure 3. LVPECL Typical Termination VDD= 3.3V => R1 = 100 to 150  VDD= 2.5V => R1 = 75  VDD 100 nF Z0 = 50  OUT+ D+ Receiver Device LVPECL Driver 100 nF Z0 = 50  OUTR1 R1 D50  50  VTT Figure 4. LVPECL AC Coupled Termination VDD = 3.3V => R1 = R3 = 133  and R2 = R4 = 82  VDD = 2.5V => R1 = R3 = 250  and R2 = R4 = 62.5  VDD R1 VDD OUT+ R3 Z0 = 50  D+ Receiver Device LVPECL Driver OUT- Z0 = 50  DR2 R4 Figure 5. LVPECL with Thevenin Typical Termination Rev 1.08 Page 5 of 13 www.sitime.com SiT9121 1 MHz − 220 MHz High Performance Differential Oscillator Termination Diagrams (continued) LVDS VDD OUT+ Z0 = 50  D+ 100  LVDS Driver OUT- Z0 = 50  Receiver Device D- Figure 6. LVDS Single Termination (Load Terminated) Rev 1.08 Page 6 of 13 www.sitime.com SiT9121 1 MHz − 220 MHz High Performance Differential Oscillator Dimensions and Patterns Package Size – Dimensions (Unit: mm)[3] Recommended Land Pattern (Unit: mm) [4] 3.2 x 2.5 x 0.75 mm 3.2±0.05 #4 #2 #3 1.6 0.7 YXXXX #6 0.9 YXXXX #1 #5 #4 #3 #2 1.00 #5 2.5±0.05 #6 2.25 2.20 #1 0.6 0.65 1.05 0.75±0.05 5.0 x 3.2 x 0.75 mm 2.54 5.0±0.10 #4 #5 3.2±0.10 #4 YXXXX YXXXX #6 1.20 #5 #6 0.90 #1 #2 #3 #3 #2 #1 0.64 0.75±0.05 7.0 x 5.0x 0.90 mm 7.0±0.10 5.08 #4 #6 1.10 YXXXX 5.08 #5 3.80 #4 2.60 #5 5.0±0.10 #6 #1 #2 #3 #3 #2 1.60 YXXXX #1 1.40 0.90 ±0.10 1.60 Notes: 3. Top Marking: Y denotes manufacturing origin and XXXX denotes manufacturing lot number. The value of “Y” will depend on the as sembly location of the device. 4. A capacitor of value 0.1 F between VDD and GND is recommended. Rev 1.08 Page 7 of 13 www.sitime.com SiT9121 1 MHz − 220 MHz High Performance Differential Oscillator Ordering Information SiT9121AC-1C2-33E125.000000T Packaging: Part Family “SiT9121” “T”, “Y”, “X”, “D”, “E”, or “G” Refer to table below for packing method Leave Blank for Bulk Revision Letter “A” is the revision of Silicon Frequency 1.000000 MHz to 220.000000 MHz Temperature Range Feature Pin “N” for No Connect “E” for Output Enable “S” for Standby “I” Industrial, -40 to 85°C “C” Extended Commercial, -20 to 70°C Signalling Type “1” = LVPECL “2” = LVDS Voltage Supply “25” for 2.5V ±10% “33” for 3.3V ±10% “XX” for 2.25V to 3.63V Package Size “B” 3.2 x 2.5 mm x mm “C” 5.0 x 3.2 mm x mm “D” 7.0 x 5.0 mm x mm Frequency Stability “F” for ±10 ppm “1” for ±20 ppm “2” for ±25 ppm “3” for ±50 ppm Table 7. Frequencies Not Supported Frequency Range Min. Max. 209.000001 MHz 210.999999 MHz Table 8. Ordering Codes for Supported Tape & Reel Packing Method Device Size 8 mm T&R (3ku) 8 mm T&R (1ku) 8 mm T&R (250u) 7.0 x 5.0 mm – – – – 5.0 x 3.2 mm – – – T 3.2 x 2.5 mm D E G T Y Rev 1.08 12 mm T&R (3ku) 12 mm T&R (1ku) Page 8 of 13 12 mm T&R (250u) 16 mm T&R (3ku) 16 mm T&R (1ku) 16 mm T&R (250u) – – T Y X Y X – – – X – – – www.sitime.com SiT9121 1 MHz − 220 MHz High Performance Differential Oscillator Table 9. Revision History Revisions Release Date 1.01 02/20/2013 Change Summary Original 1.02 12/03/2013 Added input specifications, LVPECL/LVDS waveforms, packaging T&R options 1.03 02/06/2014 Added 8mm T&R option and ±10 ppm 1.04 04/08/2014 Included 1.8V option for LVDS output only 1.05 07/30/2014 Included Thermal Consideration table 1.06 10/20/2014 Modified Thermal Consideration values. Preliminary removed from the title 1.07 04/03/2017 Removed 1.8V option 1.08 08/17/2019 Added No Connect feature to Pin 1 Added Table 5: Maximum Operating Junction Temperature Updated logo and company address, other page layout changes SiTime Corporation, 5451 Patrick Henry Drive, Santa Clara, CA 95054, USA | Phone: +1-408-328-4400 | Fax: +1-408-328-4439 © SiTime Corporation 2013-2019. The information contained herein is subject to change at any time without notice. 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Rev 1.08 Page 9 of 13 www.sitime.com Silicon MEMS Outperforms Quartz Supplemental Information The Supplemental Information section is not part of the datasheet and is for informational purposes only. Rev 1.08 Page 10 of 13 www.sitime.com Silicon MEMS Outperforms Quartz Best Reliability Best Electro Magnetic Susceptibility (EMS) Silicon is inherently more reliable than quartz. Unlike quartz suppliers, SiTime has in-house MEMS and analog CMOS expertise, which allows SiTime to develop the most reliable products. Figure 1 shows a comparison with quartz technology. SiTime’s oscillators in plastic packages are up to 54 times more immune to external electromagnetic fields than quartz oscillators as shown in Figure 3. Why is SiTime Best in Class:    SiTime’s MEMS resonators are vacuum sealed using an advanced EpiSeal™ process, which eliminates foreign particles and improves long term aging and reliability World-class MEMS and CMOS design expertise Why is SiTime Best in Class:  Internal differential architecture for best common mode noise rejection Electrostatically driven MEMS resonator is more immune to EMS Reliability (Million Hours) SiTime 1,140 IDT 38 EPSN 28 KYCA EPSN TXC CW SLAB SiTime Figure 3. Electro Magnetic Susceptibility (EMS)[3] Figure 1. Reliability Comparison[1] Best Power Supply Noise Rejection Best Aging Unlike quartz, MEMS oscillators have excellent long term aging performance which is why every new SiTime product specifies 10-year aging. A comparison is shown in Figure 2. Why is SiTime Best in Class:   SiTime’s MEMS oscillators are more resilient against noise on the power supply. A comparison is shown in Figure 4. Why is SiTime Best in Class:   SiTime’s MEMS resonators are vacuum sealed using an advanced EpiSeal™ process, which eliminates foreign particles and improves long term aging and reliability Inherently better immunity of electrostatically driven MEMS resonator On-chip regulators and internal differential architecture for common mode noise rejection MEMS resonator is paired with advanced analog CMOS IC SiTime EPSN KYCA MEMS vs. Quartz Aging EpiSeal Oscillator SiTimeMEMS Oscillator Quartz QuartzOscillator Oscillator 10 8 Aging (
PPM) 8 6 4 2 3 3.5 1.5 Figure 4. Power Supply Noise Rejection[4] 0 1-Year 10-Year Figure 2. Aging Comparison[2] Rev 1.08 Page 11 of 13 www.sitime.com Silicon MEMS Outperforms Quartz Best Vibration Robustness Best Shock Robustness High-vibration environments are all around us. All electronics, from handheld devices to enterprise servers and storage systems are subject to vibration. Figure 5 shows a comparison of vibration robustness. SiTime’s oscillators can withstand at least 50,000 g shock. They all maintain their electrical performance in operation during shock events. A comparison with quartz devices is shown in Figure 6. Why is SiTime Best in Class: Why is SiTime Best in Class:   The moving mass of SiTime’s MEMS resonators is up to 3000 times smaller than quartz Center-anchored MEMS resonator is the most robust design Vibration Sensitivity (ppb/g) TXC TXC EPS CW KYCA KYCA SLAB   The moving mass of SiTime’s MEMS resonators is up to 3000 times smaller than quartz Center-anchored MEMS resonator is the most robust design EpiSeal SiTime MEMS 100.0 10.0 1.0 0.1 0.0 10 100 1000 KYCA Vibration Frequency (Hz) Figure 5. Vibration Robustness[5] EPSN TXC CW SLAB SiTime Figure 6. Shock Robustness[6] Figure labels:       TXC = TXC Epson = EPSN Connor Winfield = CW Kyocera = KYCA SiLabs = SLAB SiTime = EpiSeal MEMS Rev 1.08 Page 12 of 13 www.sitime.com Silicon MEMS Outperforms Quartz Notes: 1. Data source: Reliability documents of named companies. 2. Data source: SiTime and quartz oscillator devices datasheets. 3. Test conditions for Electro Magnetic Susceptibility (EMS):  According to IEC EN61000-4.3 (Electromagnetic compatibility standard)  Field strength: 3V/m  Radiated signal modulation: AM 1 kHz at 80% depth  Carrier frequency scan: 80 MHz – 1 GHz in 1% steps  Antenna polarization: Vertical  DUT position: Center aligned to antenna Devices used in this test: Label Manufacturer Part Number Technology EpiSeal MEMS SiTime SiT9120AC-1D2-33E156.250000 MEMS + PLL EPSN Epson EG-2102CA156.2500M-PHPAL3 Quartz, SAW TXC TXC BB-156.250MBE-T Quartz, 3 Overtone CW Conner Winfield P123-156.25M Quartz, 3 Overtone KYCA AVX Kyocera KC7050T156.250P30E00 Quartz, SAW SLAB SiLab 590AB-BDG Quartz, 3rd Overtone + PLL rd rd 4. 50 mV pk-pk Sinusoidal voltage. Devices used in this test: Label Manufacturer Part Number Technology EpiSeal MEMS SiTime SiT8208AI-33-33E-25.000000 MEMS + PLL NDK NDK NZ2523SB-25.6M Quartz KYCA AVX Kyocera KC2016B25M0C1GE00 Quartz EPSN Epson SG-310SCF-25M0-MB3 Quartz 5. Devices used in this test: same as EMS test stated in Note 3. 6. Test conditions for shock test:  MIL-STD-883F Method 2002  Condition A: half sine wave shock pulse, 500-g, 1ms  Continuous frequency measurement in 100 μs gate time for 10 seconds Devices used in this test: same as EMS test stated in Note 3. 7. Additional data, including setup and detailed results, is available upon request to qualified customer. Please contact productsupport@sitime.com. Rev 1.08 Page 13 of 13 www.sitime.com