SED4060G

SED4060G N-Channel Enhancement-Mode MOSFET Revision: A Features General Description This type used advanced trench technology For a single MOSFET   and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide VDS = 40V RDS(ON) = 7mΩ @ VGS=10V variety of application Pin configurations See Diagram below D 5 D 6 D 7 D 8 1 2 3 4 S S S G DFN5*6 Absolute Maximum Ratings Parameter Symbol Rating Units Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ±20 V Drain Current Total Power Dissipation Continuous Pulsed @TA=25℃ Operating Junction Temperature Range ID 60 A 200 PD 65 W TJ -55 to 175 ℃ Thermal Resistance Symbol RθJC Parameter Thermal Resistance Junction to Case ShangHai Sino-IC Microelectronic Co., Ltd. Typ Max Units - 5 ℃/W 1. SED4060G Electrical Characteristics Symbol (TJ=25℃ unless otherwise noted) Parameter Test Conditions Min Typ Max Units OFF CHARACTERISTICS (Note 2) BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0 V IDSS Drain to Source Leakage Current VDS=40V, VGS=0V IGSS Gate-Body Leakage Current VGS=20V VGS(th) Gate Threshold Voltage VDS= VGS, ID=250μA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A Forward Transconductance VDS=5V, ID=20A gFS 40 V 1 μA 300 nA 1.0 1.6 2.2 V - 7.5 9.5 mΩ 25 S 942 pF 309 pF 29 pF 14.5 nC 2 nC 2.5 nC DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VGS=0V, VDS=20V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge VGS=10V, VDS=20V, Qgs Gate Source Charge Qgd Gate Drain Charge td(on) Turn-On Delay Time VGS=10V, VDS=20V, 6 ns td(off) Turn-Off Delay Time RGEN=10Ω, ID=10A 21 ns td(r) Turn-On Rise Time 5 ns td(f) Turn-Off Fall Time 5 ns ID=10A Source-Drain Ratings and Characteristics VSD Diode Forward Voltage VGS=0V,IS=20A trr Reverse Recovery Time TJ=25℃, IF=10A 24 ns Qrr Reverse Recovery Charge Di/dt=100A/μs 19 nC ShangHai Sino-IC Microelectronic Co., Ltd. 1.2 V 2. SED4060G Typical Characteristics ShangHai Sino-IC Microelectronic Co., Ltd. 3. SED4060G Typical Characteristics ShangHai Sino-IC Microelectronic Co., Ltd. 4. SED4060G Package Outline Dimension DFN5X6 ShangHai Sino-IC Microelectronic Co., Ltd. 5. SED4060G The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics Co., Ltd. © 2005 SINO-IC – Printed in China – All rights reserved. SHANGHAI SINO-IC MICROELECTRONICS CO., LTD Add: Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-Tech Park, Pudong, Shanghai 201203, China Phone: +86-21-33932402 33932403 33932405 33933508 33933608 Fax: +86-21-33932401 Email: webmaster@sino-ic.net Website: http://www.sino-ic.net ShangHai Sino-IC Microelectronic Co., Ltd. 6.