PESD18VF1BL
Ultra low capacitance bidirectional ESD protection diode
10 July 2018
Product data sheet
1. General description
Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in a DFN1006-2
(SOD882) leadless ultra small Surface-Mounted Device (SMD) plastic package designed to protect
one signal line from the damage caused by ESD and other transients.
2. Features and benefits
•
•
•
•
•
Ultra low diode capacitance Cd = 0.35 pF
High reverse standoff voltage VRWM = 18 V
Very small voltage dependency of the capacitance
ESD protection up to ±10 kV according to IEC 61000-4-2, level 4
AEC-Q101 qualified
3. Applications
•
•
NFC antenna protection
Protection of high-speed data lines
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VRWM
reverse standoff
voltage
Tamb = 25 °C
-
-
18
V
Cd
diode capacitance
f = 1 MHz; VR = 0 V; Tamb = 25 °C
0.28
0.35
0.5
pF
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
K1
cathode (diode 1)
2
K2
cathode (diode 2)
Simplified outline
1
2
Graphic symbol
K1
K2
sym045
Transparent
top view
DFN1006-2 (SOD882)
PESD18VF1BL
Nexperia
Ultra low capacitance bidirectional ESD protection diode
6. Ordering information
Table 3. Ordering information
Type number
Package
PESD18VF1BL
Name
Description
Version
DFN1006-2
DFN1006-2: leadless ultra small plastic package; 2 terminals
SOD882
7. Marking
Table 4. Marking codes
Type number
Marking code
PESD18VF1BL
WM
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
IPPM
rated peak pulse current
tp = 8/20 µs; IEC 61000-4-5; IEC
61643-321
-
1
A
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
[1]
ESD maximum ratings
VESD
[1]
[2]
electrostatic discharge
voltage
IEC 61000-4-2; contact discharge
[1] [2]
-
10
kV
IEC 61000-4-2; air discharge
[1] [2]
-
15
kV
MIL-STD-883; human body model; HBM
[1]
-
10
kV
machine model; MM
[1]
-
400
V
Measured from pin 1 to pin 2.
Device stressed with ten non-repetitive ESD pulses.
PESD18VF1BL
Product data sheet
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PESD18VF1BL
Nexperia
Ultra low capacitance bidirectional ESD protection diode
001aaa630
120
IPP
100 %
100 % IPP; 8 µs
IPP
(%)
80
90 %
e-t
50 % IPP; 20 µs
40
10 %
0
Fig. 1.
0
10
20
30
t (µs)
8/20 µs pulse waveform according to
IEC 61000-4-5 and IEC 61643-321
t
tr = 0.6 ns to 1 ns
40
30 ns
60 ns
Fig. 2.
001aaa631
ESD pulse waveform according to
IEC 61000-4-2
9. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VRWM
reverse standoff
voltage
Tamb = 25 °C
-
-
18
V
VBR
breakdown voltage
IR = 10 mA; Tamb = 25 °C
19
22
24
V
IRM
reverse leakage
current
VR = 18 V; Tamb = 25 °C
-
1
30
nA
Cd
diode capacitance
f = 1 MHz; VR = 0 V; Tamb = 25 °C
0.28
0.35
0.5
pF
VCL
clamping voltage
IPP = 1 A; tp = 8/20 µs; IEC 61000-4-5;
IEC 61643-321; Tamb = 25 °C
[1]
-
-
17
V
Rdyn
dynamic resistance
IR = 10 A; Tamb = 25 °C
[2]
-
0.8
-
Ω
[1]
[2]
Measured from pin 1 to pin 2.
Non-repetitive current pulse, Transmission Line Pulse (TLP) tp = 100 ns; square pulse; ANSI / ESD STM5.5.1-2008.
PESD18VF1BL
Product data sheet
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PESD18VF1BL
Nexperia
Ultra low capacitance bidirectional ESD protection diode
ESD TESTER
4 GHz DIGITAL
OSCILLOSCOPE
RG 223/U
50 Ω coax
Rd
40 dB
ATTENUATOR
Cs
50 Ω
DUT
(DEVICE
UNDER
TEST)
IEC 61000-4-2 ed.2
Cs = 150 pF; Rd = 330 Ω
10
2
V
(kV) 8
V
(kV) 0
6
-2
4
-4
2
-6
0
-8
-2
-10
0
10
20
30
40
50
t (ns)
60
-10
-10
70
unclamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
0
10
20
30
40
50
t (ns)
60
70
unclamped -8 kV ESD pulse waveform
(IEC 61000-4-2 network)
aaa-003952
Fig. 3.
ESD clamping test setup and waveforms
aaa-008158
100
VCL
(V)
VCL
(V)
60
-20
20
-60
-20
-50
Fig. 4.
aaa-008159
20
0
50
100
150
200
250
t (ns)
-100
-50
300
Clamped +8 kV pulse waveform (IEC 61000-4-2
network)
PESD18VF1BL
Product data sheet
Fig. 5.
0
100
150
200
250
t (ns)
300
Clamped -8 kV pulse waveform (IEC 61000-4-2
network)
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PESD18VF1BL
Nexperia
Ultra low capacitance bidirectional ESD protection diode
IPPM
IPP
aaa-008157
0.4
Cd
(pF)
0.35
0.30
IR
IRM
-VCL -VBR -VRWM
-IRM
-IR
VRWM VBR VCL
0.25
-
0.20
-20
-10
0
10
VR (V)
Fig. 6.
-IPP
20
-IPPM
f = 1 MHz; VR = 0 V; Tamb = 25 °C
Diode capacitance as a function of reverse
voltage; typical values
+
Fig. 7.
006aab325
V-I characteristics for a bidirectional ESD
protection diode
aaa-009078
25
I
(A)
20
15
10
5
0
0
10
20
30
VCL (V)
40
tp = 100 ns; Transmission Line Pulse (TLP)
Fig. 8.
Dynamic resistance
PESD18VF1BL
Product data sheet
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PESD18VF1BL
Nexperia
Ultra low capacitance bidirectional ESD protection diode
10. Application information
The device is designed for the protection of one bidirectional data line from surge pulses and ESD
damage. The device is suitable on lines where the signal polarities are both positive and negative
with respect to ground.
line to be protected
ESD protection diode
GND
aaa-002737
Fig. 9.
Application diagram
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge
transients. The following guidelines are recommended:
1.
2.
3.
4.
5.
6.
7.
8.
Place the device as close to the input terminal or connector as possible.
Minimize the path length between the device and the protected line.
Keep parallel signal paths to a minimum.
Avoid running protected conductors in parallel with unprotected conductors.
Minimize all Printed-Circuit Board (PCB) conductive loops including power and ground loops.
Minimize the length of the transient return path to ground.
Avoid using shared transient return paths to a common ground point.
Use ground planes whenever possible. For multilayer PCBs, use ground vias.
11. Test information
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
PESD18VF1BL
Product data sheet
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PESD18VF1BL
Nexperia
Ultra low capacitance bidirectional ESD protection diode
12. Package outline
0.50
0.46
0.62
0.55
2
0.30
0.22
0.65
0.30
0.22
1.02
0.95
1
0.55
0.47
cathode marking on top side (if applicable)
Dimensions in mm
03-04-17
Fig. 10. Package outline DFN1006-2 (SOD882)
13. Soldering
1.3
0.7
R0.05 (8×)
solder lands
0.6 0.7 0.8
(2×) (2×) (2×)
0.9
solder resist
solder paste
occupied area
0.3
(2×)
Dimensions in mm
0.4
(2×)
0.5
(2×)
sod882_fr
Fig. 11. Reflow soldering footprint for DFN1006-2 (SOD882)
PESD18VF1BL
Product data sheet
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PESD18VF1BL
Nexperia
Ultra low capacitance bidirectional ESD protection diode
14. Revision history
Table 7. Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PESD18VF1BL v.2
20180710
Product data sheet
-
PESD18VF1BL v.1
Modifications>
•
•
•
PESD18VF1BL v.1
PESD18VF1BL
Product data sheet
AEC-Q101 qualification added
The format of this data sheet has been redesigned to comply with the identity guidelines of
Nexperia.
Legal texts have been adapted to the new company name where appropriate.
20130902
Product data sheet
-
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PESD18VF1BL
Nexperia
Ultra low capacitance bidirectional ESD protection diode
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15. Legal information
Data sheet status
Document status
[1][2]
Product
status [3]
Definition
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
Preliminary [short]
data sheet
Qualification
This document contains data from
the preliminary specification.
Product [short]
data sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
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multiple devices. The latest product status information is available on
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PESD18VF1BL
Product data sheet
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
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PESD18VF1BL
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Ultra low capacitance bidirectional ESD protection diode
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Trademarks
Notice: All referenced brands, product names, service names and
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Product data sheet
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PESD18VF1BL
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Ultra low capacitance bidirectional ESD protection diode
Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................1
6. Ordering information....................................................2
7. Marking.......................................................................... 2
8. Limiting values............................................................. 2
9. Characteristics..............................................................3
10. Application information............................................. 6
11. Test information..........................................................6
12. Package outline.......................................................... 7
13. Soldering..................................................................... 7
14. Revision history..........................................................8
15. Legal information.........................................................9
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Nexperia B.V. 2018. All rights reserved
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Date of release: 10 July 2018
PESD18VF1BL
Product data sheet
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