BAV99W-Q
High-speed switching diode
7 June 2021
Product data sheet
1. General description
High-speed switching double diode, encapsulated in a very small SOT323 (SC-70) SurfaceMounted Device (SMD) plastic package.
2. Features and benefits
•
•
•
•
•
•
High switching speed: trr ≤ 4 ns
Low capacitance: Cd ≤ 1.5 pF
Low leakage current
Reverse voltage: VR ≤ 100 V
Very small SMD plastic packages
Qualified according to AEC-Q101 and recommended for use in automotive applications
3. Applications
•
•
•
High-speed switching
Reverse polarity protection
General-purpose switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VR = 80 V; Tamb = 25 °C
-
-
0.5
µA
-
-
100
V
-
-
4
ns
Per diode
IR
reverse current
VR
reverse voltage
trr
reverse recovery time
IF = 10 mA; IR = 10 mA; IR(meas) = 1 mA;
RL = 100 Ω; Tamb = 25 °C
BAV99W-Q
Nexperia
High-speed switching diode
5. Pinning information
Table 2. Pinning information
Pin
Symbol
Description
Simplified outline
1
A1
anode (diode 1)
2
K2
cathode (diode 2)
3
K1, A2
cathode (diode 1) and
anode (diode 2)
Graphic symbol
3
1
K1, A2
2
A1
K2
006aaa763
SC-70 (SOT323)
6. Ordering information
Table 3. Ordering information
Type number
Package
BAV99W-Q
Name
Description
Version
SC-70
plastic, surface-mounted package; 3 leads; 1.3 mm pitch; 2 SOT323
mm x 1.25 mm x 0.95 mm body
7. Marking
Table 4. Marking codes
Type number
Marking code[1]
BAV99W-Q
A7%
[1]
% = placeholder for manufacturing site code
BAV99W-Q
Product data sheet
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High-speed switching diode
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per diode
VR
reverse voltage
-
100
V
VRRM
repetitive peak reverse
voltage
-
100
V
IF
forward current
single diode loaded
-
150
mA
double diode loaded
-
130
mA
-
500
mA
tp = 1 µs; square wave; Tj(init) = 25 °C
-
4
A
tp = 1 ms; square wave; Tj(init) = 25 °C
-
1
A
tp = 1 s; square wave; Tj(init) = 25 °C
-
0.5
A
-
200
mW
IFRM
repetitive peak forward
current
IFSM
non-repetitive peak
forward current
Per device; one diode loaded
Ptot
total power dissipation
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
-65
150
°C
Tstg
storage temperature
-65
150
°C
[1]
Tamb ≤ 25 °C
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-a)
thermal resistance from single diode loaded; in free air
junction to ambient
Rth(j-sp)
thermal resistance from
junction to solder point
[1]
[1]
Min
Typ
Max
Unit
-
-
625
K/W
-
-
300
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
BAV99W-Q
Product data sheet
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High-speed switching diode
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IF = 1 mA; Tamb = 25 °C
-
-
715
mV
IF = 10 mA; Tamb = 25 °C
-
-
855
mV
IF = 50 mA; Tamb = 25 °C
-
-
1
V
IF = 150 mA; Tamb = 25 °C
-
-
1.25
V
VR = 25 V; Tamb = 25 °C
-
-
30
nA
VR = 80 V; Tamb = 25 °C
-
-
0.5
µA
VR = 25 V; Tj = 150 °C
-
-
30
µA
Per diode
VF
forward voltage
IR
reverse current
VR = 80 V; Tj = 150 °C
-
-
50
µA
Cd
diode capacitance
VR = 0 V; f = 1 MHz; Tamb = 25 °C
-
-
1.5
pF
trr
reverse recovery time
IF = 10 mA; IR = 10 mA; IR(meas) = 1 mA;
RL = 100 Ω; Tamb = 25 °C
-
-
4
ns
VFRM
peak forward recovery
voltage
IF = 10 mA; tr = 20 ns; Tamb = 25 °C
-
-
1.75
V
006aab132
103
006aab133
102
IR
(µA)
10
IF
(mA)
102
(1)
(2)
1
10-1
10
(3)
10-2
(1)
1
(2)
(3)
10-3
(4)
10-4
10-1
0
0.2
0.4
0.6
0.8
1.0
10-5
1.2
1.4
VF (V)
(1) Tamb = 150 °C
(2) Tamb = 85 °C
(3) Tamb = 25 °C
(4) Tamb = -40 °C
Fig. 1.
Product data sheet
0
20
40
60
80
VR (V)
100
(1) Tamb = 150 °C
(2) Tamb = 85 °C
(3) Tamb = 25 °C
(4) Tamb = -40 °C
Forward current as a function of forward
voltage; typical values
BAV99W-Q
(4)
Fig. 2.
Reverse current as a function of reverse
voltage; typical values
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BAV99W-Q
Nexperia
High-speed switching diode
mbg446
0.8
mbg704
102
Cd
(pF)
IFSM
(A)
0.6
10
0.4
1
0.2
0
0
4
8
12
VR (V)
10-1
16
f = 1 MHz; Tamb = 25 °C
Fig. 3.
1
102
10
103
tp (µs)
104
Based on square wave currents.
Tj(init) = 25 °C
Diode capacitance as a function of reverse
voltage; typical values
Fig. 4.
Non-repetitive peak forward current as a
function of pulse duration; typical values
11. Test information
tr
D.U.T.
IF
RS = 50 Ω
tp
t
10 %
+ IF
SAMPLING
OSCILLOSCOPE
trr
t
Ri = 50 Ω
V = VR + IF × RS
mga881
(1)
90 %
VR
input signal
output signal
(1) IR = 1 mA
Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycle δ = 0.05
Oscilloscope: rise time tr = 0.35 ns
Fig. 5.
Reverse recovery time test circuit and waveforms
I
RS = 50 Ω
1 kΩ
D.U.T.
450 Ω
I
V
90 %
OSCILLOSCOPE
VFR
Ri = 50 Ω
10 %
tr
tp
input signal
t
t
output signal
mga882
Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp ≥ 100 ns; duty cycle δ ≤ 0.005
Fig. 6.
Forward recovery voltage test circuit and waveforms
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
BAV99W-Q
Product data sheet
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BAV99W-Q
Nexperia
High-speed switching diode
12. Package outline
2.2
1.8
1.1
0.8
0.45
0.15
3
2.2 1.35
2.0 1.15
1
2
1.3
0.4
0.3
0.25
0.10
Dimensions in mm
Fig. 7.
04-11-04
Package outline SC-70 (SOT323)
BAV99W-Q
Product data sheet
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BAV99W-Q
Nexperia
High-speed switching diode
13. Soldering
2.65
1.85
1.325
solder lands
solder resist
2
2.35
0.6
(3×)
3
solder paste
1.3
occupied area
0.5
(3×)
1
Dimensions in mm
0.55
(3×)
Fig. 8.
sot323_fr
Reflow soldering footprint for SC-70 (SOT323)
4.6
2.575
1.425
(3×)
solder lands
solder resist
occupied area
1.8
3.65 2.1
09
(2×)
Dimensions in mm
preferred transport
direction during soldering
sot323_fw
Fig. 9.
Wave soldering footprint for SC-70 (SOT323)
BAV99W-Q
Product data sheet
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BAV99W-Q
Nexperia
High-speed switching diode
14. Revision history
Table 8. Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
BAV99W-Q v.1
Product data sheet
-
-
BAV99W-Q
Product data sheet
20210607
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BAV99W-Q
Nexperia
High-speed switching diode
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15. Legal information
Data sheet status
Document status
[1][2]
Product
status [3]
Definition
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
Preliminary [short]
data sheet
Qualification
This document contains data from
the preliminary specification.
Applications — Applications that are described herein for any of these
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or warranty that such applications will be suitable for the specified use
without further testing or modification.
Product [short]
data sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
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High-speed switching diode
Contents
1. General description...................................................... 1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking.......................................................................... 2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 3
10. Characteristics............................................................ 4
11. Test information.......................................................... 5
12. Package outline.......................................................... 6
13. Soldering..................................................................... 7
14. Revision history..........................................................8
15. Legal information........................................................9
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Nexperia B.V. 2021. All rights reserved
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Date of release: 7 June 2021
BAV99W-Q
Product data sheet
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