SI2310A

UMW R SI2310A 60V N-Channel MOSFET ■ Features SOT–23 VDS (V) =60V ID =3A RDS(ON) 80m (VGS = 10V) RDS(ON) 95m (V GS = 4.5V) 1. GATE 2. SOURCE 3. DRAIN D G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VD S 60 V Gate-Source Voltage VG S ±20 V Continuous Drain Current TA=25 ℃ ID TA=70℃ 2.3 Pulsed Drain Current * Power Dissipation 3 TA=25℃ I DM 10 PD 1.38 W 0.01 W/℃ Rt hJa 90 ℃/W TJ , TSTG -55 to 150 ℃ Linear Derating Factor Thermal R esistance.Junction-to-ambient Junction and Storage Temperature Range A * 2.Pulse width ≤300us , duty cycle≤ 2%. www.umw-ic.com 1 友台半导体有限公司 UMW R SI2310A 60V N-Channel MOSFET ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance Testconditons ID =250μA, VG S=0V Typ 60 10 V DS =48, V GS =0V ,TJ=70℃ 25 V DS =0V, V G S=±20V VG S(th) V DS =V GS ID=-250μA 1 nA 3 V 80 V GS =4.5V, I D=2A 95 mΩ g FS Input Capacitance Ciss 5 Output Capacitance C oss Reverse Transfer Capacitance Crss 40 Total Gate Charge Qg 6 Gate Source Charge Q gs Gate Drain Charge Q gd 3 Turn-On DelayTime tD(on) 6 Turn-On Rise Time tr Turn-Off DelayTime tD(off) 490 V GS =0V, VD S=25V, f=1MHz VDS=48V, ID=3A ,VGS=4.5V V GS =10V, V DS=30V,ID=1A RD=30 Ω,RG EN=3.3Ω μA ±100 V GS =10V, ID=3A V DS =5V, I D=3A Unit V Forward Transconductance S 780 pF 55 10 1.6 nC 5 ns 16 Turn-Off Fall Time tf Body Diode Reverse Recovery Time t rr IS =3A,dI/dt=100A/μs 25 Body Diode Reverse Recovery Charge Q rr IS =3A, dI /dt=100A/μs 26 Diode Forward Voltage V SD IS =1.2A,V GS =0V www.umw-ic.com Max V DS =60V, VG S=0V IGSS RDS(ON) Min 3 2 nC 1.2 V 友台半导体有限公司 UMW R SI2310A 60V N-Channel MOSFET 10 10 8 ID , Drain Current (A) ID , Drain Current (A) 8 10V 7.0V 5.0V 4.5V o T A = 150 C 10V 7.0V 5.0V 4.5V T A =25 o C 6 V G = 3.0 V 4 2 6 V G = 3.0 V 4 2 0 0 0 1 3 2 4 0 5 1 2 3 4 5 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 105 2.0 ID=2A 99 ID=3A V G =10V 1.8 o T A =25 C Normalized R DS(ON) RDS(ON) (mΩ ) 1.6 93 87 1.4 1.2 1.0 81 0.8 0.6 75 2 6 4 8 -50 10 0 50 100 150 T j , Junction Temperature ( o C) V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.4 3 Normalized VGS(th) (V) 1.2 IS(A) 2 o o T j =150 C T j =25 C 1 1.0 0.8 0.6 0.4 0 0 0.2 0.4 0.6 0.8 1 -50 1.2 V SD , Source-to-Drain Voltage (V) 50 100 150 o Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Junction Temperature Reverse Diode www.umw-ic.com 0 T j , Junction Temperature ( C) 3 友台半导体有限公司 UMW R SI2310A 60V N-Channel MOSFET f=1.0MHz 1000 ID=3A 12 C iss V DS = 30 V V DS =38V V DS =48V 10 C (pF) VGS , Gate to Source Voltage (V) 14 8 100 6 C oss C rss 4 2 10 0 0 3 6 9 12 1 15 5 Q G , Total Gate Charge (nC) 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 100.000 Normalized Thermal Response (Rthja) Duty factor=0.5 10.000 100us 1.000 ID (A) 1ms 10ms 0.100 100ms 1s DC T A =25 o C Single Pulse 0.010 0.2 0.1 0.1 0.05 PDM 0.01 t 0.01 T Single Pulse Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 270℃ ℃ /W 0.001 0.0001 0.001 0.1 1 10 100 0.01 0.1 1 10 100 1000 t , Pulse Width (s) V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area www.umw-ic.com 0.001 1000 Fig 10. Effective Transient Thermal Impedance 4 友台半导体有限公司 UMW R SI2310A 60V N-Channel MOSFET Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min. Max. 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP. 1.800 2.000 0.550 REF. 0.300 0.500 0° 8° Dimensions In Inches Min. Max. 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP. 0.071 0.079 0.022 REF. 0.012 0.020 0° 8° Marking A10 U Ordering information Order code Package Baseqty Deliverymode UMW SI2310A SOT-23 3000 Tape and reel www.umw-ic.com 5 友台半导体有限公司