WS72358S-8/TR

WS72358 WS72358 Low-Power Rail-to-Rail Operational Amplifiers Input Output Http//:www.willsemi.com Descriptions The WS72358 series is a dual low-voltage operational amplifier with rail-to-rail input/output swing. Ultra low quiescent current makes this amplifier ideal for SOP-8L MSOP-8L portable, battery operated equipment. The common mode input range includes ground making the device useful for low−side current−shunt measurements. OUTA -INA 1 A 2 The WS72358 is available with MSL 3 Level in SOP-8L +INA 3 package and MSOP-8L package. Standard products V- 4 B 8 V+ 7 OUTB 6 -INB 5 +INB are Pb-Free and halogen-Free. SOP-8L/MSOP-8L Applications Pin configuration (Top view)  Active Filters  Smoke/Gas Sensors  Battery Powered Electronic Equipments  Personal Medical Care Features  Single Supply Voltage  Quiescent Current : 1.8~5.5V per SOP-8L MSOP-8L : 42A Typical Amplifier Marking  GBWP : 1.5MHz 358. = Device code  Slew Rate : 1.1V/s SP = Special code  Offset Voltage : 3mV Maximum MP = Special code  Offset Voltage Temp. Drift : 1.1V / C Y = Year code  THD+N :-102dB@1kHz, W = Week code ° -86dB@10kHz  CMRR/PSRR : 110dB/106dB  Output Short-Circuit Curr. : 46mA ° Order Information Device Package Shipping WS72358S-8/TR SOP-8L 4000/Reel &Tape WS72358M-8/TR MSOP-8L 4000/Reel &Tape °  -40 C to 125 C Operation Range  Drives 2kΩ Resistive Loads  No Output Crossover Distortion  No Phase Reversal from Overdriven Input  Rail-to-Rail Input/Output Swing Will Semiconductor Ltd. 1 Jun, 2019 - Rev. 1.4 WS72358 Pin Descriptions Pin Number Symbol Descriptions 1 OUTA 2 -INA Inverting input 3 +INA Non-inverting input 4 V- 5 +INB Non-inverting input 6 -INB Inverting input 7 OUTB 8 V+ Output Negative supply Output Positive supply Absolute Maximum Ratings Parameter Supply Voltage, ([V+] – [V-]) Input Differential Voltage Symbol Value Unit (2) VS (3) VIDR 6 V 6 - V + Input Common Mode Voltage Range VICR (V )-0.2 to (V )+0.2 Output Short-Circuit Duration tSO Unlimited / -40 to 125 ° -65 to 150 ° 150 ° 260 ° Operating Fee-Air Temperature Range TA Storage Temperature Range TSTG Junction Temperature Range TJ Lead Temperature Range TL V C C C C Note: 1. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are only stress ratings, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions are not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 2. All voltage values, except differential voltage are with respect to network terminal. 3. Differential voltages are at +IN with respect to -IN. ESD, Electrostatic Discharge Protection Symbol HBM Parameter Human Body Model ESD Condition MIL-STD-883H Method 3015.8 Minimum level Unit ±8000 V JEDEC-EIA/JESD22-A114A MM CDM Machine Model ESD JEDEC-EIA/JESD22-A115 ±350 V Charged Device Model ESD JEDEC-EIA/JESD22-C101E ±2000 V Will Semiconductor Ltd. 2 Jun, 2019 - Rev. 1.4 WS72358 Electronics Characteristics The *denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. VS = 5V, VCM = VOUT = VS/2, Rload = 100kΩ, Cload =100pF. Symbol Parameter Conditions VCM= VS/2 Min. Typ. Max. Unit -3.0 0.1 3.0 mV VOS Input Offset Voltage VOS Input Offset Voltage Drift 1.1 μV/°C IIB Input Bias Current 10 pA IOS Input Offset Current 10 pA Vn Input Voltage Noise f=0.1Hz to10Hz 5.2 VP-P f=10Hz to 20kHz 4.6 Vrms en Input Voltage Noise Density f=1kHz 30 f=10kHz 23 CMRR Common Mode Rejection Ratio VCM=0.1V to 4.9V * * 85 - nV/√Hz 110 dB + VCM Common Mode Input Voltage Range * (V )-0.2 PSRR Power Supply Rejection Ratio * 90 106 dB AVOL Open Loop Large Signal Gain * 100 109 dB VOH High Level Output Voltage VOL Low Level Output Voltage ISC Output Short-Circuit Current IQ Quiescent Current per Amplifier PM Phase Margin GM Gain Margin GBWP Gain-Bandwidth Product Settling tS Time VOUT=0.1V to 4.9V, Rload=10k Rload=2k 50 Rload=10k 5 Rload=2k 50 Rload=10k 5 Sink/Source * Rload=100k, Gain mV mV 42 mA A 60 65 degrees -15 dB f=1kHz 1.5 MHz 0.1% 1.9 0.1% 0.29 Cload=100pF Cload=100pF 2.45 to 2.55V, Unity V 46 Current Rload=100k, 1.5 to 3.5V, Unity Gain (V )+0.2 s AV=1, VOUT=1.5V to SR Slew Rate 3.5V, Rload=100k, 1.1 V/s 180 kHz Cload=100pF FPBW Full Power Bandwidth 2VP-P f=1kHz, AV=1, Rload=100k, THD+N Total Harmonic Distortion and Noise -102 VOUT=2VPP dB f=10kHz, AV=1, Rload=100k, -86 VOUT=2VPP Will Semiconductor Ltd. 3 Jun, 2019 - Rev. 1.4 WS72358 Note: 1. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. 2. A heat sink may be required to keep the junction temperature below the absolute maximum rating when the output is shorted indefinitely. 3. Thermal resistance varies with the amount of PC board metal connected to the package. The specified values are for short traces connected to the leads. 4. Full power bandwidth is calculated from the slew rate FPBW = SR/(π • VP-P). Will Semiconductor Ltd. 4 Jun, 2019 - Rev. 1.4 WS72358 Typical Characteristics TA=25°C, VS=±2.5V, VCM=0V, unless otherwise noted Small-Siganl Step Response, 100mV Step Large-Siganl Step Response, 2V Step VIN=-0.2V to 5.7V, No Phase Reversal 0.1Hz to 10Hz Integrated Input Noise, Gain = 50000 Over Shoot Voltage, Cload=47nF, Over Shoot Voltage, Cload=47nF, RFB=10kΩ, Gain=+1 Rload=40kΩ, Gain=-1 Will Semiconductor Ltd. 5 Jun, 2019 - Rev. 1.4 WS72358 Typical Characteristics (continued) TA=25°C, VS=±2.5V, VCM=0V, unless otherwise noted Open-Loop Gain and Phase 180 80 Cload=100pF Rload=100k Gain Phase 150 Gain=+1 Rload=100k 70 Phase Margin() 120 Gain and Phase Phase Margin vs. Cload (Stable for Any Cload) 90 60 30 0 60 50 40 30 20 10 -30 -60 100 1k 10k 100k 0 10 1M 100 Frequency(Hz) Input Offset Voltage vs. Temperature CMRR(dB) Input Offset Voltage(mV) 0.5 0.4 0.3 0.2 -25 0 25 50 75 100 125 150 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 10 100 100k Gain=-1, RFB=20kΩ Gain=+1 60 Gain=-1 Over shoot Under shoot 30 20 10 100 10k Over-Shoot % vs. Cload 40 0 1k Over-Shoot % vs. Cload over shoot and Under shoot(%) over shoot and Under shoot(%) 50 100k 1k 10k 100k 1M Gain=+1 Over shoot Under shoot 50 40 30 20 10 0 1M 100 1k 10k 100k 1M Load Capacitance(pF) Load Capacitance(pF) Will Semiconductor Ltd. 1M Frequency(Hz) Temperature(C) 60 10k CMRR vs. Frequency 0.6 0.1 -50 1k Load Capacitance(pF) 6 Jun, 2019 - Rev. 1.4 WS72358 Typical Characteristics (continued) TA=25°C, VS=±2.5V, VCM=0V, unless otherwise noted PSRR vs. Frequency Closed-Loop Output Impedance vs. Frequency Close-loop Output lmpedance() 110 100 90 PSRR(dB) 80 70 60 50 40 30 20 10 0 10 100 1k 10k 100k 1M 80 70 60 50 40 30 20 10 0 1k 10k Frequency(Hz) 50 48 48 46 44 42 -25 0 25 50 75 46 44 42 40 2.0 100 125 150 2.5 Temperature(C) 3.5 4.0 4.5 5.0 5.5 6.0 Input Offset Voltage Distribution 30 Production Packaged Units 2,700 Samples 25 Percentage(%) Ishort(mA) 3.0 Supply Voltage(V) Short-Circuit Current vs. Supply Voltage 60 55 50 45 40 35 30 25 20 15 10 5 0 2.0 1M Quiescent Supply Current vs. Supply Voltage 50 Quiescent Current(uA) Quiescent Current(uA) Quiescent Supply Current vs. Temperature 40 -50 100k Frequency(Hz) 20 15 10 5 2.5 3.0 3.5 4.0 4.5 5.0 5.5 0 6.0 -2 Supply Voltage(V) Will Semiconductor Ltd. 7 -1 0 1 Input Offset Voltage(mV) 2 Jun, 2019 - Rev. 1.4 WS72358 Typical Characteristics (continued) TA=25°C, VS=±2.5V, VCM=0V, unless otherwise noted THD+Noise vs. Frequency Rload=100k Cload=100pF VIN+=2VPP Gain=+1 -80 -85 Rload=100k Cload=100pF f=1KHz Gain=+1 -60 -70 THD+N(dB) THD+N(dB) THD+Noise vs. VIN+ -50 -90 -95 -80 -90 -100 -110 -100 -120 -105 10 100 1k -130 10k Frequency(Hz) 1 2 3 4 VIN+(Vpp) Crosstalk -80 -82 Crosstalk(dB) -84 -86 -88 -90 -92 -94 -96 -98 -100 10 100 1k 10k Frequency(Hz) Will Semiconductor Ltd. 8 Jun, 2019 - Rev. 1.4 WS72358 PACKAGE OUTLINE DIMENSIONS SOP-8L D E E1 L c θ e SIDE VIEW A1 TOP VIEW A A2 b SIDE VIEW Dimensions In Millimeters (mm) Symbol Min. Typ. Max. A 1.35 1.55 1.75 A1 0.05 0.15 0.25 A2 1.25 1.40 1.65 b 0.33 - 0.51 c 0.15 - 0.26 D 4.70 4.90 5.10 E 3.70 3.90 4.10 E1 5.80 6.00 6.20 e 1.27BSC L 0.40 - 1.27 θ 0° - 8° Will Semiconductor Ltd. 9 Jun, 2019 - Rev. 1.4 WS72358 TAPE AND REEL INFORMATION Reel Dimensions RD Reel Dimensions Tape Dimensions W P1 Quadrant Assignments For PIN1 Orientation In Tape Q1 Q2 Q1 Q2 Q3 Q4 Q3 Q4 User Direction of Feed RD Reel Dimension 7inch 13inch W Overall width of the carrier tape 8mm 12mm P1 Pitch between successive cavity centers 2mm 4mm 8mm Pin1 Pin1 Quadrant Q1 Q2 Q3 Will Semiconductor Ltd. 10 Q4 Jun, 2019 - Rev. 1.4 WS72358 PACKAGE OUTLINE DIMENSIONS MSOP-8L D e c E E1 L b θ TOP VIEW A A2 A1 SIDE VIEW SIDE VIEW Symbol Dimensions In Millimeters (mm) Min. Typ. Max. A - - 1.10 A1 0.02 - 0.15 A2 0.75 0.80 0.95 b 0.25 - 0.38 c 0.09 - 0.23 D 2.90 3.00 3.10 E 4.75 4.90 5.05 E1 2.90 3.00 3.10 e 0.65 BSC L 0.40 - 0.80 θ 0° - 6° Will Semiconductor Ltd. 11 Jun, 2019 - Rev. 1.4 WS72358 TAPE AND REEL INFORMATION Reel Dimensions RD Reel Dimensions Tape Dimensions W P1 Quadrant Assignments For PIN1 Orientation In Tape Q1 Q2 Q1 Q2 Q3 Q4 Q3 Q4 User Direction of Feed RD Reel Dimension 7inch 13inch W Overall width of the carrier tape 8mm 12mm P1 Pitch between successive cavity centers 2mm 4mm 8mm Pin1 Pin1 Quadrant Q1 Q2 Q3 Will Semiconductor Ltd. 12 Q4 Jun, 2019 - Rev. 1.4