MJD45H11J

MJD45H11 80 V, 8 A PNP high power bipolar transistor 12 September 2019 Product data sheet 1. General description PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD44H11 2. Features and benefits • • • • • High thermal power dissipation capability High energy efficiency due to less heat generation Electrically similar to popular MJD45H series Low collector emitter saturation voltage Fast switching speeds 3. Applications • • • • • • Power management Load switch Linear mode voltage regulator Constant current drive backlighting application Motor drive Relay replacement 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - -80 V IC collector current - - -8 A ICM peak collector current single pulse; tp ≤ 1 ms - - -16 A hFE DC current gain VCE = -1 V; IC = -2 A; Tamb = 25 °C 60 - - MJD45H11 Nexperia 80 V, 8 A PNP high power bipolar transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 B base 2 C collector 3 E emitter mb C mounting base; connected to collector Graphic symbol mb E B C; mb aaa-029523 2 1 3 DPAK (SOT428C) 6. Ordering information Table 3. Ordering information Type number Package MJD45H11 Name Description Version DPAK Plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) SOT428C 7. Marking Table 4. Marking codes Type number Marking code MJD45H11 MJD45H11 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCEO collector-emitter voltage open base - -80 V VEBO emitter-base voltage open collector - -6 V IC collector current - -8 A ICM peak collector current single pulse; tp ≤ 1 ms - -16 A Ptot total power dissipation Tmb ≤ 25 °C [1] - 20 W Tamb ≤ 25 °C [2] - 1.75 W Tj junction temperature - 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C [1] [2] Total power dissipation junction to mounting base. 2 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated mounting pad for collector 1 cm . MJD45H11 Product data sheet All information provided in this document is subject to legal disclaimers. 12 September 2019 © Nexperia B.V. 2019. All rights reserved 2 / 12 MJD45H11 Nexperia 80 V, 8 A PNP high power bipolar transistor aaa-029825 2.0 Ptot (W) 1.5 1.0 0.5 0 -50 0 50 100 150 200 Tamb (°C) 2 FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm . Fig. 1. Power derating curves SOT428C 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-mb) thermal resistance from in free air junction to mounting base Rth(j-a) thermal resistance from junction to ambient [1] [1] Min Typ Max Unit - - 6.25 K/W - - 72 K/W 2 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated mounting pad for collector 1 cm . 102 Zth(j-a) (K/W) aaa-029826 duty cycle = 1 0.50 0.25 10 0.75 0.33 0.20 0.10 0.05 0.02 1 0.01 0 10-1 10-5 10-4 10-3 10-2 10-1 1 10 102 2 tp (s) 103 FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm . Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values MJD45H11 Product data sheet All information provided in this document is subject to legal disclaimers. 12 September 2019 © Nexperia B.V. 2019. All rights reserved 3 / 12 MJD45H11 Nexperia 80 V, 8 A PNP high power bipolar transistor 10. Characteristics Table 7. Characteristics Symbol Parameter Min Typ Max Unit collector-emitter cut-off VCE = -64 V; VBE = 0 V; Tamb = 25 °C current VCE = -64 V; VBE = 0 V; Tj = 150 °C - - -1 µA - - -50 µA IEBO emitter-base cut-off current VEB = -5 V; IC = 0 A; Tamb = 25 °C - - -1 µA hFE DC current gain VCE = -1 V; IC = -2 A; Tamb = 25 °C 60 - - VCE = -1 V; IC = -4 A; Tamb = 25 °C 40 - - ICES Conditions VCEsat collector-emitter saturation voltage IC = -8 A; IB = -400 mA; Tamb = 25 °C - - -1 V VBEsat base-emitter saturation IC = -8 A; IB = -800 mA; Tamb = 25 °C voltage - - -1.5 V ton turn-on time - 225 - ns ts storage time - 280 - ns tf fall time - 100 - ns toff turn-off time - 380 - ns Cc collector capacitance VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C - 80 - pF fT transition frequency VCE = -10 V; IC = -500 mA; f = 100 MHz; Tamb = 25 °C - 80 - MHz IC = -5 A; IBon = -0.5 A; IBoff = 0.5 A; VCC = -12.5 V; Tamb = 25 °C aaa-029837 600 aaa-029838 -8 hFE -70 IB (mA) = -80 IC (A) -60 -50 -6 -40 400 -30 -4 -20 -15 200 -10 -2 -5 0 -10 -102 -103 IC (mA) 0 -104 VCE = -1 V (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig. 3. 0 -1 -2 -3 -4 VCE (V) -5 Tamb = 25 °C Fig. 4. Collector current as a function of collectoremitter voltage; typical values DC current gain as a function of collector current; typical values MJD45H11 Product data sheet All information provided in this document is subject to legal disclaimers. 12 September 2019 © Nexperia B.V. 2019. All rights reserved 4 / 12 MJD45H11 Nexperia 80 V, 8 A PNP high power bipolar transistor aaa-029839 -1.2 aaa-029840 -1.2 VBE (V) VBEsat (V) (1) (1) -0.8 -0.8 (2) (2) (3) (3) -0.4 0 -1 -10 -102 -0.4 -103 IC (mA) 0 -104 VCE = -5 V (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 150 °C Fig. 5. -1 -102 -10 -103 IC (mA) -104 IC/IB = 20 (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 150 °C Base-emitter voltage as a function of collector current; typical values aaa-029841 -1 VCEsat (V) Fig. 6. Base-emitter saturation voltage as a function of collector current; typical values aaa-029842 -2.0 VCEsat (V) (3) (2) -1.5 (1) -10-1 -1.0 -10-2 -0.5 (1) -10-3 -1 -10 -102 -103 IC (mA) 0 -10-1 -104 IC/IB = 20 (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig. 7. Collector-emitter saturation voltage as a function of collector current; typical values MJD45H11 Product data sheet (2) (3) -1 (4) -10 (5) -102 IB (mA) -103 (1) IC = -100 mA (2) IC = -500 mA (3) IC = -1000 mA (4) IC = -3000 mA (5) IC = -8000 mA Fig. 8. Collector-emitter saturation region as a function of base current; typical values All information provided in this document is subject to legal disclaimers. 12 September 2019 © Nexperia B.V. 2019. All rights reserved 5 / 12 MJD45H11 Nexperia 80 V, 8 A PNP high power bipolar transistor aaa-029844 104 C (pF) 103 (1) 102 (2) 10 -10-1 -1 -10 V (V) -102 Tamb = 25 °C (1) Ce (2) Cc Fig. 9. Input/output capacitance as a function of input/output voltage MJD45H11 Product data sheet All information provided in this document is subject to legal disclaimers. 12 September 2019 © Nexperia B.V. 2019. All rights reserved 6 / 12 MJD45H11 Nexperia 80 V, 8 A PNP high power bipolar transistor 11. Test information - IB input pulse (idealized waveform) 90 % - I Bon (100 %) 10 % - I Boff output pulse (idealized waveform) - IC 90 % - I C (100 %) 10 % t td ts tr t on tf t off 006aaa266 Fig. 10. BISS transistor switching time definition VBB RB (probe) oscilloscope 450 Ω VCC RC Vo (probe) 450 Ω R2 VI oscilloscope DUT R1 mgd624 Fig. 11. Test circuit for switching times MJD45H11 Product data sheet All information provided in this document is subject to legal disclaimers. 12 September 2019 © Nexperia B.V. 2019. All rights reserved 7 / 12 MJD45H11 Nexperia 80 V, 8 A PNP high power bipolar transistor 12. Package outline Plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) SOT428C y E A A A1 b2 E1 see note 1 mounting base D2 D1 HD 2 L2 L 1 b1 (2x) L1 3 b (2x) e w c A e1 0 5 10 mm scale Dimensions (mm are the original dimensions) Unit mm A A1 b b1 b2 c D1 max 2.38 0.93 0.89 1.10 5.46 0.60 6.22 nom min 2.22 0.46 0.71 0.72 5.00 0.20 5.98 D2 E E1 6.73 4.0 6.47 4.45 e e1 2.285 4.57 HD L L1 10.4 2.95 9.6 2.55 L2 1.0 0.5 0.5 w 0.2 y 0.2 Note 1. Plastic body may have 45° chamfer. Outline version SOT428C sot428c_po References IEC JEDEC JEITA TO-252 SC-63 European projection Issue date 19-08-28 Fig. 12. Package outline DPAK (SOT428C) MJD45H11 Product data sheet All information provided in this document is subject to legal disclaimers. 12 September 2019 © Nexperia B.V. 2019. All rights reserved 8 / 12 MJD45H11 Nexperia 80 V, 8 A PNP high power bipolar transistor 13. Soldering Footprint information for reflow soldering of DPAK (SOT428C) package SOT428C 7 6.15 5.9 5.8 1.8 1 4.725 4.6 5.75 5.65 6.5 1.15 3.6 6 2.45 6 6.125 0.3 2.4 2.3 1.3 1.5 1.4 1.65 4.57 occupied area solder resist solder lands solder paste Dimensions in mm Issue date 19-09-06 sot428c_fr Fig. 13. Reflow soldering footprint for DPAK (SOT428C) MJD45H11 Product data sheet All information provided in this document is subject to legal disclaimers. 12 September 2019 © Nexperia B.V. 2019. All rights reserved 9 / 12 MJD45H11 Nexperia 80 V, 8 A PNP high power bipolar transistor 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes MJD45H11 v.3 20190912 Product data sheet - MJD45H11 v.2 Modifications: • MJD45H11 v.2 20190729 Product data sheet - MJD45H11 v.1 MJD45H11 v.1 20190528 Preliminary data sheet - - MJD45H11 Product data sheet Package outline adapted to SOT428C All information provided in this document is subject to legal disclaimers. 12 September 2019 © Nexperia B.V. 2019. All rights reserved 10 / 12 MJD45H11 Nexperia 80 V, 8 A PNP high power bipolar transistor 15. Legal information injury, death or severe property or environmental damage. Nexperia and its suppliers accept no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Data sheet status Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Document status [1][2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. 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Suitability for use — Nexperia products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an Nexperia product can reasonably be expected to result in personal MJD45H11 Product data sheet Applications — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Nexperia products, and Nexperia accepts no liability for any assistance with applications or customer product design. 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Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — Nexperia products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nexperia.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. 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Nexperia accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Nexperia’s warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Nexperia’s specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Nexperia for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Nexperia’s standard warranty and Nexperia’s product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. All information provided in this document is subject to legal disclaimers. 12 September 2019 © Nexperia B.V. 2019. All rights reserved 11 / 12 MJD45H11 Nexperia 80 V, 8 A PNP high power bipolar transistor Contents 1. General description...................................................... 1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Marking.......................................................................... 2 8. Limiting values............................................................. 2 9. Thermal characteristics............................................... 3 10. Characteristics............................................................ 4 11. Test information.......................................................... 7 12. Package outline.......................................................... 8 13. Soldering..................................................................... 9 14. Revision history........................................................10 15. Legal information......................................................11 © Nexperia B.V. 2019. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 12 September 2019 MJD45H11 Product data sheet All information provided in this document is subject to legal disclaimers. 12 September 2019 © Nexperia B.V. 2019. All rights reserved 12 / 12