ME4542

ME4542/ME4542-G N and P- Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4542 is the N and P Channel logic enhancement mode ● RDS(ON)≦25mΩ@VGS=10V (N-Ch) power field effect transistors are produced using high cell density , ● RDS(ON)≦40mΩ@VGS=4.5V (N-Ch) DMOS trench technology. This high density process is especially ● RDS(ON)≦35mΩ@VGS=-10V (P-Ch) tailored to minimize on-state resistance. These devices are ● RDS(ON)≦58mΩ@VGS=-4.5V (P-Ch) particularly suited for low voltage application such as cellular phone ● Super high density cell design for extremely low RDS(ON) and notebook computer power management and other battery ● Exceptional on-resistance and maximum DC current powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package. capability APPLICATIONS ● Power Management ● DC/DC Converter ● LCD TV & Monitor Display inverter ● CCFL inverter PIN ● LCD Display inverter CONFIGURATION (SOP-8) Top View e Ordering Information: ME4542 (Pb-free) ME4542-G (Green product-Halogen free) Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Symbol N-Channel P-Channel Maximum Ratings Maximum Ratings Drain-Source Voltage VDS 30 -30 Gate-Source Voltage VGS ±20 ±20 7.1 -6 5.7 -4.8 28 -24 2 2 1.3 1.3 Continuous Drain Current TA=25℃ TA=70℃ Pulsed Drain Current Maximum Power Dissipation IDM TA=25℃ TA=70℃ Operating Junction Temperature Thermal Resistance-Junction to Ambient * *The device mounted on 1in2 FR4 board with 2 oz copper Apr, 2012-Ver4.1 ID PD TJ RθJA -55 to 150 62.5 Unit V A W ℃ 62.5 D C℃/W C 正式發行 01 ME4542/ME4542-G N and P- Channel 30-V (D-S) MOSFET Electrical Characteristics (TA =25℃ Unless Otherwise Specified) Symbol Parameter Conditions Min Typ Max Unit STATIC VGS=0V, ID=250μA VGS=0V, ID=-250μA VDS=VGS, ID=250μA VDS=VGS, ID=-250μA V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current VDS=0V, VGS=±20V IDSS Zero Gate Voltage Drain Current RDS(ON) Drain-Source On-State Resistancea VSD Diode Forward Voltage N-Ch P-Ch 30 -30 N-Ch P-Ch 1.0 -1.0 V 3.0 -3.0 V N-Ch P-Ch ±100 ±100 nA VDS=30V, VGS=0V VDS=-30V, VGS=0V N-Ch P-Ch 1 -1 μA VGS=10V, ID= 6.7A VGS=-10V, ID= -6.1A N-Ch P-Ch 21 30 25 35 VGS=4.5V, ID= 5.0A VGS=-4.5V, ID= -5.0A N-Ch P-Ch 32 48 40 58 IS=1.7A, VGS=0V IS=-1.7A, VGS=0V N-Ch P-Ch 0.8 -0.8 1.2 -1.2 N-Ch P-Ch 12 21 N-Ch P-Ch 2 4 N-Ch P-Ch 2.5 6 mΩ V DYNAMIC Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg N-Channel VDS=15V, VGS=10V, ID=6.7A P-Channel VDS=-15V, VGS=-10V, ID=-6.1A N-Channel VDS=15V, VGS=0V, f=1MHz P-Channel VDS=15V, VGS=0V, f=1MHz N-Ch P-Ch 360 840 N-Ch P-Ch 70 120 N-Ch P-Ch 17 32 Gate Resistance VDS=0V, VGS=0V, f=1MHz N-Ch P-Ch 0.5 5.5 td(on) Turn-On Delay Time N-Ch P-Ch 9.3 32 tr Turn-On Rise Time N-Channel VDD=15V, RL =15Ω ID=1A, VGEN=10V, RG=6Ω N-Ch P-Ch 14 13 td(off) Turn-Off Delay Time N-Ch P-Ch 32 58 tf Turn-Off Fall Time N-Ch P-Ch 3.2 6.8 P-Channel VDD=-15V, RL =15Ω ID=-1A, VGEN=-10V,RG=6Ω nC pF Ω ns Notes: a. Pulse test; pulse width ≦ 300us, duty cycle≦ 2% b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice. DCC 正式發行 Apr, 2012-Ver4.1 02 ME4542/ME4542-G N and P- Channel 30-V (D-S) MOSFET Typical Characteristics (TJ =25℃ Noted) N-CHANNEL DCC 正式發行 Apr, 2012-Ver4.1 03 ME4542/ME4542-G N and P- Channel 30-V (D-S) MOSFET Typical Characteristics (TJ =25℃ Noted) N-CHANNEL DCC 正式發行 Apr, 2012-Ver4.1 04 ME4542/ME4542-G N and P- Channel 30-V (D-S) MOSFET Typical Characteristics (TJ =25℃ Noted) P-CHANNEL DCC 正式發行 Apr, 2012-Ver4.1 05 ME4542/ME4542-G N and P- Channel 30-V (D-S) MOSFET Typical Characteristics (TJ =25℃ Noted) P-CHANNEL DCC 正式發行 Apr, 2012-Ver4.1 06 ME4542/ME4542-G N and P- Channel 30-V (D-S) MOSFET SOP-8 Package Outline MILLIMETERS (mm) DIM MIN MAX A 1.35 1.75 A1 0.10 0.25 B 0.35 0.49 C 0.18 0.25 D 4.80 5.00 E 3.80 4.00 e 1.27 BSC H 5.80 6.20 L 0.40 1.25 θ 0° 7° Note: 1. Refer to JEDEC MS-012AA. 2. Dimension “D” does not include mold flash, protrusions or gate burrs . Mold flash, protrusions or gate burrs shall not exceed 0.15 mm per side. DCC 正式發行 Apr, 2012-Ver4.1 07