ESDA6V8UW-6/TR

ESDA6V8UW ESDA6V8UW 4-Lines, Uni-directional, Low Capacitance http//:www.willsemi.com Transient Voltage Suppressors Descriptions The ESDA6V8UW is a low capacitance TVS (Transient Voltage Suppressor) array designed to protect high speed data interfaces. It has been specifically designed to protect sensitive electronic components which are connected to data SOT-363 and transmission lines from over-stress caused by ESD (Electrostatic Discharge). The ESDA6V8UW incorporates four pairs of low capacitance steering diodes plus a TVS diode. The ESDA6V8UW may be used to provide ESD protection up to ±8kV (contact discharge) according to IEC61000-4-2, and withstand peak pulse current up to 3A (8/20μs) according to IEC61000-4-5. The ESDA6V8UW is available in SOT-363 package. Circuit diagram Standard products are Pb-free and Halogen-free. Features  Reverse stand-off voltage: 5V Max  Transient protection for each line according to I/O Vcc I/O 6 5 4 W IEC61000-4-2 (ESD): ±8kV (contact discharge) IEC61000-4-5 (surge): 3A (8/20μs)  Low capacitance: CI/O - GND = 0.70pF typ. CI/O – I/O = 0.35pF typ. 1 2 3 I/O GND I/O  Low leakage current  Low clamping voltage * = Month code (A~Z)  Solid-state silicon technology W = Device code Marking & Pin configuration (Top View) Applications  USB 2.0  HDMI 1.3  SATA and eSATA  DVI  IEEE 1394  PCI Express  Portable Electronics  Notebooks Will Semiconductor Ltd. Order information 1 Device Package Shipping ESDA6V8UW-6/TR SOT-363 3000/Tape&Reel 2013/08/07 - Rev 4.0 ESDA6V8UW Absolute maximum ratings Parameter Symbol Rating Unit Peak pulse power (tp = 8/20μs) Ppk 45 W Peak pulse current (tp = 8/20μs) IPP 3 A ESD according to IEC61000-4-2 air discharge VESD ESD according to IEC61000-4-2 contact discharge Operation junction temperature Storage temperature ±8 kV 125 o TL 260 o TSTG -55~150 o TJ Lead temperature ±15 C C C Electrical characteristics (TA = 25oC, unless otherwise noted) Definitions of electrical characteristics Will Semiconductor Ltd. 2 2013/08/07 - Rev 4.0 ESDA6V8UW Electrical characteristics (TA = 25 C, unless otherwise noted) o Parameter Symbol Condition Min. Typ. Max. Unit 5 V 1 μA Reverse stand-off voltage VRWM Reverse leakage current IR VRWM = 5V Reverse breakdown voltage VBR IBR = 1mA 6.5 8.0 9.0 V Forward voltage VF IF = 10mA 0.6 0.9 1.2 V Clamping voltage 1) VCL IPP = 1A, tp = 8/20μs 11 V IPP = 3A, tp = 8/20μs 15 V 0.70 0.90 pF 0.35 0.50 pF CI/O - GND Junction capacitance CI/O – I/O 1) VR = 0V, f = 1MHz, Any I/O to GND VR = 0V, f = 1MHz, Any I/O to I/O According to IEC61000-4-5. Will Semiconductor Ltd. 3 2013/08/07 - Rev 4.0 ESDA6V8UW Typical characteristics (TA = 25 C, unless otherwise noted) 110 100 90 80 70 60 50 40 30 20 10 0 100 90 Front time: T1= 1.25 T = 8s Time to half-value: T2= 20s Current (%) Peak pulse current (%) o T2 10 0 5 T 10 T1 15 20 25 Time (s) 30 35 tr = 0.7~1ns 15 0.8 Pulse waveform: tp = 8/20s 14 Junction capacitance (pF) VC - Clamping voltage (V) Time (ns) Contact discharge current waveform per IEC61000-4-2 8/20μs waveform per IEC61000-4-5 13 12 11 10 9 8 t 60ns 30ns 40 0 1 2 3 Vcc = floated, I/O to GND 0.7 f = 1MHz 0.6 0.5 4 0 1 IPP - Peak pulse current (A) 2 3 4 5 VR - Reverse voltage (V) Capacitance vs. Reveres voltage Clamping voltage vs. Peak pulse current 1000 100 % of Rated power Peak pulse power (W) 100 10 1 1 10 100 Pulse time ( s) 60 40 20 0 1000 0 25 50 75 100 125 150 o TA - Ambient temperature ( C) Power derating vs. Ambient temperature Non-repetitive peak pulse power vs. Pulse time Will Semiconductor Ltd. 80 4 2013/08/07 - Rev 4.0 ESDA6V8UW Typical characteristics (TA = 25 C, unless otherwise noted) o ESD clamping ESD clamping (+8kV contact discharge per IEC61000-4-2) (-8kV contact discharge per IEC61000-4-2) Will Semiconductor Ltd. 5 2013/08/07 - Rev 4.0 ESDA6V8UW Package outline dimensions SOT-363 Symbol Dimensions In Millimeters Min. Typ. Max. A 0.850 -- 1.050 A1 0.000 -- 0.100 A2 0.800 0.900 1.000 b 0.220 -- 0.290 c 0.115 -- 0.150 D 2.020 2.070 2.120 E 1.250 1.300 1.350 E1 2.200 2.300 2.400 e 0.650 BSC e1 1.300 BSC L 0.500 REF L1 θ 0.280 0 o 0.330 0.380 -- 8o 0.85 1.85 Recommend land pattern (Unit: mm) Note: This land pattern is for your reference only. Will Semiconductor Ltd. 6 2013/08/07 - Rev 4.0