KNY3303A

KIA 90A，30V N-CHANNEL MOSFET KNX3303A SEMICONDUCTORS SEMICONDUCTOR S 1.Description This Power MOSFET is produced using KIA`s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. 2. Features n RDS(on)=3.1mΩ@ VGS=10V n Improved dv/dt capability n Fast switching n Green device available 3.Symbol 1 of 5 Pin Function 4 Gate 5,6,7,8 Drain 1,2,3 Source Rev 1.1 JAN 2019 KIA 90A，30V N-CHANNEL MOSFET KNX3303A SEMICONDUCTORS SEMICONDUCTOR S Rev1.0 Sep.2018 4. Ordering information Part Number Package Brand KNG3303A DFN3*3 KIA KNY3303A DFN5*6 KIA 5. Absolute maximum ratings (TA=25°C,unless otherwise noted) Rating Units Parameter Symbol DFN3*3 DFN5*6 Drain-source voltage VDSS 30 V Gate-source voltage VGSS +20 V 90* A 57* A IDP 360* A Avalanche current (note 2) IAS 50 A Avalanche energy, (note 2) EAS 125 mJ Continuous drain current Pulse drain current (note 1) TC=25ºC ID TC=100ºC TC=25ºC TC=25 ºC Maximum power dissipation PD Derate above 25 ºC Junction & storage temperature range 43.4 69 W 0.35 0.55 W/℃ TJ,TSTG ℃ -55-150 *Drain current limited by maximum junction temperature. 6. Thermal characteristics Parameter Symbol Rating DFN3*3 DFN5*6 Unit Thermal resistance, Junction-ambient RθJA 95 62 ºC/W Thermal resistance, Junction-case RθJC 2.88 1.81 ºC/W 2 of 5 Rev 1.1 JAN 2019 KIA 90A，30V N-CHANNEL MOSFET KNX3303A SEMICONDUCTORS SEMICONDUCTOR S 7. Electrical characteristics Parameter Drain-source breakdown voltage (TA=25°C,unless otherwise noted) Min Typ Max Units Symbol Test Conditions BVDSS VGS=0V,IDS=250μA 30 - - V Reference to 25°C, ID=1mA - 0.03 - V/°C VDS=30V, VGS=0V, TJ=25°C - - 1 VDS=24V, VGS=0V, TJ=125°C - - 10 VGS(th) VDS=VGS, ID=250μA 1.2 1.6 2.5 V △VGS(th) VDS=VGS, ID=250μA - -5 - mV/°C IGSS VGS=+20V, VDS=0V - - +100 nA VGS=10V,ID=24A - 3.1 4 VGS=4.5V,ID=12A - 4.5 6 △BVDSS BVDSS temperature coefficient /△TJ Zero gate voltage drain current Gate threshold voltage VGS(th) temperature coefficient Gate leakage current Drain-source on-resistance(note3) IDSS RDS(on) μA mΩ Forward transconductance gfs VDS=10V,ID=10A - 15.5 - S Gate resistance Rg VDS=0V, VGS=0V,f=1MHz - 2 4 Ω Input capacitance Ciss - 3070 Output capacitance Coss - 400 Reverse transfer capacitance Crss - 315 Turn-on delay time(note 3,4) td(on) - 12.6 Rise time(note 3,4) Turn-off delay time(note 3,4) Fall time(note 3,4) VDS=15V,VGS=0V, f=1MHz pF tr VDD=15V, ID=15A, - 19.5 td(off) RG=3.3Ω,VGS=10V - 42.8 - 13.2 - 24 - 4.2 - 13 31 - - - - 90 A - - 360 A tf Total gate charge(note 3,4) Qg Gate-source charge(note 3,4) Qgs Gate-drain charge(note 3,4) Qgd Single pulse avalanche energy EAS VDS=15V, VGS=4.5V IDS=24A VDD=25V,L=0.1mH,IAS=24A nS nC mJ Continuous source current IS Pulsed source current (note 3) ISM Diode forward voltage(note 3) VSD VGS=0V,IS=1A,TJ=25°C - - 1 V Reverse recovery time trr VDS=30V,IS=1A, - - - nS Reverse recovery charge Qrr di/dt=100A/μs - - - nC VGS=VDS=0V,force current Note:1: Repetitive rating, pulse width limited by max junction temperature. 2: VDD=25V, VGS=10V, L=0.1mH, IAS=50A, RG=25Ω, starting TJ=25°C 3: The data tested by pulsed, pulse width≦300us, duty cycle ≦2% 4: Essentially independent of operating temperature. 3 of 5 Rev 1.1 JAN 2019 KIA 90A，30V N-CHANNEL MOSFET KNX3303A SEMICONDUCTORS SEMICONDUCTOR S 8.Test circuits and waveforms 4 of 5 Rev 1.1 JAN 2019 KIA 90A，30V N-CHANNEL MOSFET KNX3303A SEMICONDUCTORS SEMICONDUCTOR S 5 of 5 Rev 1.1 JAN 2019