SI2308A

UMW R UMW SI2308A N-Channel MOSFET ■ Features SOT–23 ● VDS (V) = 60V ● ID = 3 A (VGS = 10V) ● RDS(ON) ＜ 80mΩ (VGS = 10V),ID=3A ● RDS(ON) ＜ 95mΩ (VGS = 4.5V),ID=1.9A 1. GATE 2. SOURCE 3. DRAIN G 1 S 2 3 D ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drain Current Ta=25℃ ID Ta=70℃ Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient IDM Ta=25℃ Ta=70℃ (Note.1) PD RthJA (Note.2) Junction Temperature Storage Temperature Range Unit V 3 1.9 A 10 1.25 0.8 100 166 TJ 150 Tstg -55 to 150 W ℃/W ℃ Note.1: Surface Mounted on FR4 Board, t ≤ 5 sec. Note.2: Surface Mounted on FR4 Board www.umw-ic.com 1 友台半导体有限公司 UMW R UMW SI2308A N-Channel MOSFET ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance On State Drain Current Forward Transconductance Test Conditions ID=250μA, VGS=0V 10 VDS=VGS , ID=250μA Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg Total Gate Charge Qg Gate Source Charge Qgs 1.5 nA 3 V 80 VGS=4.5V, ID= 1.9A 95 6 VGS≥4.5V, VDS=4.5V 4 VDS=4.5V, ID=2A 4.6 S 240 VGS=0V, VDS=25V, f=1MHz pF 50 15 VGS=0V, VDS=0V, f=1MHz 0.5 3.3 4.8 VGS=10V, VDS=30V, ID=2A nC 0.8 Qgd 1 td(on) 7 15 Turn-On Rise Time tr 10 20 Turn-Off DelayTime td(off) 17 35 6 15 Maximum Body-Diode Continuous Current IS Diode Forward Voltage VSD VGS=4.5V, VDS=30V, ID=1A, RL=30Ω,RG=6Ω IS=1A,VGS=0V Ω 10 Gate Drain Charge tf mΩ A Turn-On DelayTime Turn-Off Fall Time uA ±100 VGS=10V, ID= 3A VGS≥4.5V, VDS=10V Unit V VDS=60V, VGS=0V, TJ=55℃ VDS=0V, VGS=±20V gFS Max 0.5 IGSS ID(ON) Typ 60 VDS=60V, VGS=0V VGS(th) RDS(On) Min ns 1 A 1.2 V Note.Pulse test; pulse width ≤ 300 us, duty cycle ≤ 2%. www.umw-ic.com 2 友台半导体有限公司 UMW R UMW SI2308A N-Channel MOSFET ■ Typical Characterisitics Ou t p u t Ch ar ac t er i s t i c s Tr an s f er Ch ar ac t er i s t i c s 12 12 9 I D - Drain Current (A) I D - Drain Current (A) V GS = 10 thru 5 V 4 V 6 3 9 6 3 3 V T C = 125 C 25 C - 55 C 1, 2 V 0 0 0 4 2 6 8 10 0 VDS - Drain-to-Source Voltage (V) 4 5 Capacitance 400 0.8 C - Capacitance (pF) ) r DS(on) - On-Resistance ( 3 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 1.0 2 1 0.6 0.4 C iss 200 100 V GS = 4.5 V 0.2 300 C oss C rss V GS = 10 V 0.0 0 0 3 6 9 0 12 6 Gate Charge 1.8 r DS(on) - On-Resistance ( ) (Normalized) - Gate-to-Source Voltage (V) V GS 2.0 V DS = 30 V I D = 2.0 A 8 18 24 30 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) 10 12 6 4 2 On-Resistance vs. Junction T emperature V GS = 10 V I D = 2.0 A 1.6 1.4 1.2 1.0 0.8 0 0 2 1 3 4 0.6 - 50 5 Qg - Total Gate Charge (nC) www.umw-ic.com - 25 0 25 50 75 100 125 150 TJ - Junction Temperature ( C) 3 友台半导体有限公司 R UMW UMW SI2308A N-Channel MOSFET ■ Typical Characterisitics Source-Drain Diode Forward V oltage On-Resistance vs. Gate-to-Source 0.6 10 Voltage r DS(on) - On-Resistance ( I S - Source Current (A) ) 0.5 T J = 150 C T J = 25 C 0.4 0.3 ID = 2.0 A 0.2 0.1 0.0 1 0.00 0.2 0.4 0.6 0.8 1.0 0 1.2 4 2 6 8 10 V GS - Gate-to-Source Voltage (V) V SD - S o u rce -to -D ra in V o lta g e (V ) Threshold V oltage Single Pulse Power 0.4 12 ID = 250 A 0.2 - 0.0 Power (W) V GS(th) Variance (V) 9 - 0.2 6 - 0.4 3 - 0.6 - 0.8 - 50 . - 25 0 25 50 75 100 125 0 150 0.01 0.1 1 TJ - Temperature ( C) 100 10 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 500 Square Wave Pulse Duration (sec) www.umw-ic.com 4 友台半导体有限公司 UMW R UMW SI2308A N-Channel MOSFET Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min. Max. 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP. 1.800 2.000 0.550 REF. 0.300 0.500 0° 8° Dimensions In Inches Min. Max. 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP. 0.071 0.079 0.022 REF. 0.012 0.020 0° 8° Marking A08 U Ordering information Order code Package Baseqty Deliverymode UMW SI2308A SOT-23 3000 Tape and reel www.umw-ic.com 5 友台半导体有限公司