0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
ESDLC3V3D3B

ESDLC3V3D3B

  • 厂商:

    YINT(音特电子)

  • 封装:

    SOD323

  • 描述:

    ESDLC3V3D3B

  • 详情介绍
  • 数据手册
  • 价格&库存
ESDLC3V3D3B 数据手册
ESD Protection Diode ESDLC3V3D3B Trustworthy electronic circuit protection expert ESDLC3V3D3B Description ESDLC3V3D3B is designed to protect voltage sensitive components from ESD and transient voltage events. Excellent clamping capability, low leakage, and fast response time, make these parts ideal for ESD protection on designs where board space is at a premium. Because of its small size, ultra-low capacitance values , it is very suitable for signal port and board space speed transmission is very small places, such as Functional Diagram Ethernet, mobile phones , MP3 players, digital cameras and other portable. Features ●Ultra low leakage: nA level ●Operating voltage: 3.3V ●Package: SOD-323 ●Protects one I/O line (unidirection) ●Low clamping voltage Applications ●Complies with following standards: ●Cell Phone Handsets and Accessories – IEC 61000-4-2 (ESD) immunity test ●Microprocessor based equipment Air discharge: ±15kV ●Personal Digital Assistants (PDA’s) Contact discharge: ±8kV ●Notebooks, Desktops, and Servers – IEC61000-4-4 (EFT) 40A (5/50ns) ●Portable Instrumentation – IEC61000-4-5 (Lightning) 12A (8/20μs) ●Peripherals ●USB Interface Absolute Maximum Ratings(Tamb=25°C unless otherwise specified) Parameter Peak Pulse Power (8/20µs) ESD per IEC 61000−4−2 (Air) Symbol Value Unit PPP 350 Watts ±15 KV ±8 KV VESD ESD per IEC 61000−4−2 (Contact) Lead Soldering Temperature TL 260 (10 sec) °C Operating Temperature Range TJ -55 to +150 °C Storage Temperature Range TSTJ -55 to +150 °C www.yint.com.cn 1 Rev:19.3 ESD Protection Diode ESDLC3V3D3B Trustworthy electronic circuit protection expert Electrical Characteristics (TA = 25 °C unless otherwise noted) Parameter Reverse Stand-off Voltage Reverse Breakdown Voltage Reverse Leakage Current Symbol Conditions Min. Typ. VRWM 3.3 VBR It = 1mA VR IR Clamping Voltage VC Junction Capacitance CJ Max. 4 =VRWM Units V V 40 μA IPP=1A, tP = 8/20μs 7.5 V IPP=21A, tP = 8/20μs 15 V VR=0V, f = 1MHz 1 pF Characteristics Curves Figure 1- Power Derating Curve Figure 2- ESD Pulse Waveform (according to IEC 61000-4-2) Figure3- 8/20µs Pulse Waveform www.yint.com.cn 2 Rev:19.3 ESD Protection Diode ESDLC3V3D3B Trustworthy electronic circuit protection expert ACKAGE OTLINE DIMENSIONS in millimeters (inches) :SOD3B23 Mounting Pad Layout Disclaimer Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. www.yint.com.cn 3 Rev:19.3
ESDLC3V3D3B
物料型号:ESDLC3V3D3B

器件简介:ESDLC3V3D3B是一种ESD保护二极管,设计用于保护电压敏感元件免受ESD和瞬态电压事件的影响。具有出色的钳位能力、低漏电和快速响应时间,非常适合在板空间有限的设计中进行ESD保护。由于其尺寸小,超低电容值,非常适合用于信号端口和板空间速度传输非常小的地方,如以太网、手机、MP3播放器、数码相机等便携设备。

引脚分配:文档中未明确提供引脚分配信息。

参数特性: - 极低漏电:nA级别 - 工作电压:3.3V - 封装:SOD-323 - 单向保护一个I/O线 - 低钳位电压 - 符合以下标准: - IEC 61000-4-2 (ESD) 空气放电:±15kV,接触放电:±8kV - IEC61000-4-4 (EFT) 40A (5/50ns) - IEC61000-4-5 (雷击) 12A (8/20μs)

功能详解:文档中未提供详细的功能详解

应用信息: - 手机和手机配件 - 基于微处理器的设备 - 个人数字助理(PDA) - 笔记本电脑、台式机和服务器 - 便携式仪器 - 外围设备 - USB接口

封装信息:SOD-323

电气特性(TA = 25°C除非另有说明): - 反向电压:3.3V - 反向击穿电压:最小4V - 反向漏电电流:最大40uA - 钳位电压:在1A时为7.5V,在21A时为15V - 结电容:1pF

特性曲线包括功率降额曲线、ESD脉冲波形(根据IEC 61000-4-2)和8/20μs脉冲波形。
ESDLC3V3D3B 价格&库存

很抱歉,暂时无法提供与“ESDLC3V3D3B”相匹配的价格&库存,您可以联系我们找货

免费人工找货