PMV240SPR

PMV240SP 100 V, P-channel Trench MOSFET 25 August 2020 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • • • Extended temperature range Tj = 175 °C Trench MOSFET technology Very fast switching 3. Applications • • • • Relay driver High-speed line driver High-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - -100 V VGS gate-source voltage -25 - 25 V ID drain current - - -1.2 A - 280 365 mΩ VGS = -10 V; Tamb = 25 °C [1] Static characteristics RDSon [1] drain-source on-state resistance VGS = -10 V; ID = -1.2 A; Tj = 25 °C 2 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm . PMV240SP Nexperia 100 V, P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol 3 D G 1 2 SOT23 S 017aaa094 6. Ordering information Table 3. Ordering information Type number Package PMV240SP Name Description Version SOT23 plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 SOT23 mm x 1.3 mm x 1 mm body 7. Marking Table 4. Marking codes Type number Marking code[1] PMV240SP VY% [1] % = placeholder for manufacturing site code PMV240SP Product data sheet All information provided in this document is subject to legal disclaimers. 25 August 2020 © Nexperia B.V. 2020. All rights reserved 2 / 15 PMV240SP Nexperia 100 V, P-channel Trench MOSFET 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - -100 V VGS gate-source voltage -25 25 V ID drain current VGS = -10 V; Tamb = 25 °C [1] - -1.2 A VGS = -10 V; Tamb = 100 °C [1] - -0.8 A - -5 A [2] - 710 mW [1] - 1.3 W IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C - 8.3 W Tj junction temperature Tsp = 25 °C -55 175 °C Tamb ambient temperature -55 175 °C Tstg storage temperature -65 175 °C Source-drain diode IS source current Tamb = 25 °C [1] - -1.4 A HBM [3] - 400 V - 24 mJ ESD maximum rating VESD electrostatic discharge voltage Avalanche ruggedness EDS(AL)S [1] [2] [3] non-repetitive drainTj(init) = 25 °C; ID = -0.5 A; DUT in source avalanche energy avalanche (unclamped) 2 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm . Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. Measured between all pins. aaa-030119 120 Pder (%) Ider (%) 80 80 40 40 0 -75 Fig. 1. aaa-030120 120 25 125 Tamb (°C) Normalized total power dissipation as a function of ambient temperature PMV240SP Product data sheet 0 -75 225 Fig. 2. 125 Tamb (°C) 225 Normalized continuous drain current as a function of ambient temperature All information provided in this document is subject to legal disclaimers. 25 August 2020 25 © Nexperia B.V. 2020. All rights reserved 3 / 15 PMV240SP Nexperia 100 V, P-channel Trench MOSFET ID (A) aaa-031090 -10 tp = 10 µs 100 µs Limit RDSon = VDS/ID -1 -10-1 1 ms -10-2 10 ms -10-3 DC; Tsp = 25 °C -10-4 100 ms DC; Tamb = 25 °C; 6 cm2 -10-5 -10-6 -10-1 Fig. 3. -1 -10 -102 VDS (V) -103 Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage PMV240SP Product data sheet All information provided in this document is subject to legal disclaimers. 25 August 2020 © Nexperia B.V. 2020. All rights reserved 4 / 15 PMV240SP Nexperia 100 V, P-channel Trench MOSFET 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Rth(j-a) thermal resistance from in free air junction to ambient Rth(j-sp) [1] [2] Conditions thermal resistance from junction to solder point Min Typ Max Unit [1] - 175 210 K/W [2] - 95 115 K/W - 13 18 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm . aaa-029752 103 Zth(j-a) (K/W) duty cycle = 1 102 0.5 0.25 0.1 10 0.75 0.33 0.2 0.05 0.02 0.01 0 1 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values aaa-029753 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.33 0.2 10 0.5 0.25 0.1 0.05 0.02 0.01 0 1 10-3 10-2 10-1 FR4 PCB, mounting pad for drain 6 cm Fig. 5. 1 10 102 tp (s) 2 103 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMV240SP Product data sheet All information provided in this document is subject to legal disclaimers. 25 August 2020 © Nexperia B.V. 2020. All rights reserved 5 / 15 PMV240SP Nexperia 100 V, P-channel Trench MOSFET 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = -250 µA; VGS = 0 V; Tj = 25 °C -100 - - V VGSth gate-source threshold voltage ID = -250 µA; VDS = VGS; Tj = 25 °C -2 -2.9 -4 V IDSS drain leakage current VDS = -100 V; VGS = 0 V; Tj = 25 °C - - -1 µA IGSS gate leakage current VGS = -25 V; VDS = 0 V; Tj = 25 °C - - -100 nA VGS = 25 V; VDS = 0 V; Tj = 25 °C - - 100 nA RDSon drain-source on-state resistance VGS = -10 V; ID = -1.2 A; Tj = 25 °C - 280 365 mΩ VGS = -10 V; ID = -1.2 A; Tj = 175 °C - 644 840 mΩ VGS = -6 V; ID = -1.1 A; Tj = 25 °C - 300 435 mΩ gfs forward transconductance VDS = -5 V; ID = -1.2 A; Tj = 25 °C - 4 - S RG gate resistance f = 1 MHz - 11 - Ω VDS = -50 V; ID = -1.4 A; VGS = -10 V; Tj = 25 °C - 10 15 nC - 2.1 - nC - 2.6 - nC - 549 - pF - 24 - pF - 15 - pF - 8 - ns - 5 - ns Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) turn-off delay time - 23 - ns tf fall time - 22 - ns VDS = -50 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C VDS = -50 V; ID = -1.4 A; VGS = -10 V; RG(ext) = 6 Ω; Tj = 25 °C Source-drain diode VSD source-drain voltage IS = -1.4 A; VGS = 0 V; Tj = 25 °C - -0.8 -1.2 V trr reverse recovery time - 28 - ns Qr recovered charge IS = -1.4 A; dIS/dt = 100 A/µs; VGS = 0 V; VDS = -40 V; Tj = 25 °C - 32 - nC PMV240SP Product data sheet All information provided in this document is subject to legal disclaimers. 25 August 2020 © Nexperia B.V. 2020. All rights reserved 6 / 15 PMV240SP Nexperia 100 V, P-channel Trench MOSFET aaa-031091 -6 VGS = -10 V ID (A) -5 aaa-031092 -10-3 -5 V ID (A) -4 -10-4 -4.4 V -3 -2 -10-5 -4.1 V min typ max -2 -3 -4 -1 0 Fig. 6. -3.6 V 0 -1 -2 -3 -4 VDS (V) -10-6 -5 0 -1 -5 VGS (V) Tj = 25 °C Tj = 25 °C; VDS = -5 V Output characteristics: drain current as a Fig. 7. function of drain-source voltage; typical values Subthreshold drain current as a function of gate-source voltage aaa-031093 1200 -4.1 V RDSon (mΩ) aaa-031094 1200 -4.4 V RDSon -4.6 V 800 800 Tj = 175 °C 400 400 Tj = 25 °C -5 V -6 V VGS = -10 V 0 0 -2 -4 ID (A) 0 -6 Tj = 25 °C Fig. 8. Product data sheet -5 -10 -15 -20 -25 VGS (V) ID = -1.2 A Drain-source on-state resistance as a function of drain current; typical values PMV240SP 0 Fig. 9. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. 25 August 2020 © Nexperia B.V. 2020. All rights reserved 7 / 15 PMV240SP Nexperia 100 V, P-channel Trench MOSFET aaa-031095 -6 aaa-031096 2.5 a ID (A) 2 -4 1.5 1 -2 Tj = 25 °C Tj = 175 °C 0 0 -1 -2 -3 -4 0.5 0 -60 -5 -6 VGS (V) 0 60 120 Tj (°C) 180 VDS = -10 V Fig. 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values aaa-031097 -5 Fig. 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values aaa-031098 103 VGS(th) (V) Ciss -4 max -3 typ C (pF) 102 -2 min Coss -1 Crss 0 -60 0 60 120 Tj (°C) 10 -10-1 180 ID = -250 μA; VDS = VGS Product data sheet -10 VDS (V) -102 f = 1 MHz; VGS = 0 V Fig. 12. Gate-source threshold voltage as a function of junction temperature PMV240SP -1 Fig. 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. 25 August 2020 © Nexperia B.V. 2020. All rights reserved 8 / 15 PMV240SP Nexperia 100 V, P-channel Trench MOSFET aaa-031099 -10 VGS (V) VDS -8 ID -6 VGS(pl) -4 VGS(th) VGS QGS2 -2 QGS1 0 0 2 4 6 8 QGS QGD QG(tot) aaa-030347 10 QG (nC) VDS = -50 V; ID = -1.4 A; Tj = 25 °C Fig. 15. Gate charge waveform definitions Fig. 14. Gate-source voltage as a function of gate charge; typical values aaa-031100 -6 IS (A) -4 -2 Tj = 175 °C 0 0 -0.4 Tj = 25 °C -0.8 VSD (V) -1.2 VGS = 0 V Fig. 16. Source current as a function of source-drain voltage; typical values PMV240SP Product data sheet All information provided in this document is subject to legal disclaimers. 25 August 2020 © Nexperia B.V. 2020. All rights reserved 9 / 15 PMV240SP Nexperia 100 V, P-channel Trench MOSFET 11. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 17. Duty cycle definition PMV240SP Product data sheet All information provided in this document is subject to legal disclaimers. 25 August 2020 © Nexperia B.V. 2020. All rights reserved 10 / 15 PMV240SP Nexperia 100 V, P-channel Trench MOSFET 12. Package outline Plastic surface-mounted package; 3 leads SOT23 B D A E X HE v A 3 Q A A1 1 c 2 e1 bp w B Lp e detail X 0 1 2 mm scale Dimensions (mm are the original dimensions) Unit mm max nom min A A1 1.1 0.1 0.9 bp c D E 0.48 0.15 3.0 1.4 0.38 0.09 2.8 1.2 e e1 1.9 0.95 HE Lp Q 2.5 0.45 0.55 2.1 0.15 0.45 v w 0.2 0.1 sot023_po Outline version References IEC SOT23 JEDEC JEITA European projection Issue date 14-06-19 14-09-22 TO-236AB Fig. 18. Package outline SOT23 PMV240SP Product data sheet All information provided in this document is subject to legal disclaimers. 25 August 2020 © Nexperia B.V. 2020. All rights reserved 11 / 15 PMV240SP Nexperia 100 V, P-channel Trench MOSFET 13. Soldering 3.3 2.9 1.9 solder lands 3 solder resist 2 1.7 solder paste occupied area 0.6 (3×) 0.7 (3×) Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig. 19. Reflow soldering footprint for SOT23 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig. 20. Wave soldering footprint for SOT23 PMV240SP Product data sheet All information provided in this document is subject to legal disclaimers. 25 August 2020 © Nexperia B.V. 2020. All rights reserved 12 / 15 PMV240SP Nexperia 100 V, P-channel Trench MOSFET 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMV240SP v.1 Product data sheet - - PMV240SP Product data sheet 20200825 All information provided in this document is subject to legal disclaimers. 25 August 2020 © Nexperia B.V. 2020. All rights reserved 13 / 15 PMV240SP Nexperia 100 V, P-channel Trench MOSFET 15. Legal information injury, death or severe property or environmental damage. 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Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. All information provided in this document is subject to legal disclaimers. 25 August 2020 © Nexperia B.V. 2020. All rights reserved 14 / 15 PMV240SP Nexperia 100 V, P-channel Trench MOSFET Contents 1. General description...................................................... 1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Marking.......................................................................... 2 8. Limiting values............................................................. 3 9. Thermal characteristics............................................... 5 10. Characteristics............................................................ 6 11. Test information........................................................ 10 12. Package outline........................................................ 11 13. Soldering................................................................... 12 14. Revision history........................................................13 15. Legal information......................................................14 © Nexperia B.V. 2020. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 25 August 2020 PMV240SP Product data sheet All information provided in this document is subject to legal disclaimers. 25 August 2020 © Nexperia B.V. 2020. All rights reserved 15 / 15