ESD9N5BL
ESD9N5BL
1-Line, Bi-directional, Transient Voltage Suppressor
http//:www.sh-willsemi.com
Descriptions
The ESD9N5BL is a bi-directional TVS (Transient Voltage
Suppressor). It is specifically designed to protect sensitive
electronic components which are connected to low speed
data lines and control lines from over-stress caused by ESD
(Electrostatic Discharge), EFT (Electrical Fast Transients)
and Lightning.
DFN1006-2L (Bottom View)
The ESD9N5BL may be used to provide ESD protection up
to
±20kV
(contact
and
air
discharge)
according
to
IEC61000-4-2, and withstand peak pulse current up to 3A
(8/20μs) according to IEC61000-4-5.
Pin1
Pin2
The ESD9N5BL is available in DFN1006-2L package.
Standard products are Pb-free and Halogen-free.
Circuit diagram
Features
Reverse stand-off voltage: ±5V Max
Transient protection for each line according to
IEC61000-4-2 (ESD): ±20kV (contact and air discharge)
IEC61000-4-4 (EFT): 20A (5/50ns)
IEC61000-4-5 (surge): 3A (8/20μs)
* = Month code (A~Z)
Capacitance: CJ = 5.0pF typ.
Low leakage current: IR < 1nA typ.
Low clamping voltage: VCL = 13V typ. @ IPP = 16A (TLP)
Solid-state silicon technology
.B=Device Code
Marking (Top View)
Order information
Applications
Cellular handsets
Tablets
Laptops
Other portable devices
Network communication devices
Will Semiconductor Ltd.
1
Device
Package
Shipping
ESD9N5BL-2/TR
DN1006-2L
10000/Tape&Reel
Revision 1.4, 2015/07/01
ESD9N5BL
Absolute maximum ratings
Parameter
Symbol
Rating
Unit
Peak pulse power (tp = 8/20μs)
Ppk
33
W
Peak pulse current (tp = 8/20μs)
IPP
3
A
ESD according to IEC61000-4-2 air discharge
VESD
ESD according to IEC61000-4-2 contact discharge
Junction temperature
TJ
Operating temperature
TOP
Lead temperature
TL
Storage temperature
TSTG
±20
±20
kV
125
o
-40~85
o
260
o
-55~150
o
C
C
C
C
Electrical characteristics (TA=25 oC, unless otherwise noted)
Definitions of electrical characteristics
Will Semiconductor Ltd.
2
Revision 1.4, 2015/07/01
ESD9N5BL
o
Electrical characteristics (TA=25 C, unless otherwise noted)
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
±5
V
100
nA
Reverse stand-off voltage
VRWM
Reverse leakage current
IR
VRWM = 5V
VBR
IBR = 1mA
5.1
V
IHOLD = 50mA
5.1
V
Reverse breakdown voltage
Reverse holding voltage
VHOLD
